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1. 发明授权

US11239376B2 Diode structure 有权
公开(公告)号：US11239376B2
公开(公告)日：2022-02-01
申请号：US16584774
申请日：2019-09-26
申请人： STMICROELECTRONICS (TOURS) SAS
发明人： Frederic Lanois
IPC分类号： H01L29/10 , H01L29/861 , H01L29/417 , H01L29/66 , H01L29/78
摘要： The present disclosure relates to a structure comprising, in a trench of a substrate, a first conductive region separated from the substrate by a first distance shorter than approximately 10 nm; and a second conductive region extending deeper than the first region.

2. 发明授权

US10784787B2 Control circuit for half-bridge diodes 有权
公开(公告)号：US10784787B2
公开(公告)日：2020-09-22
申请号：US14525460
申请日：2014-10-28
申请人： STMicroelectronics (Tours) SAS
发明人： Bertrand Rivet , Greca Jean Charles , Frederic Lanois
IPC分类号： H02M3/335 , H03K17/16 , H03K17/687 , H03K17/74 , H02M1/08 , H03K3/012
摘要： A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.

3. 发明申请

US20150117063A1 CONTROL CIRCUIT FOR HALF-BRIDGE DIODES 审中-公开
标题翻译：半桥二极管的控制电路
公开(公告)号：US20150117063A1
公开(公告)日：2015-04-30
申请号：US14525460
申请日：2014-10-28
申请人： STMICROELECTRONICS (TOURS) SAS
发明人： Bertrand Rivet , Greca Jean Charles , Frederic Lanois
IPC分类号： H02M3/335 , H03K3/012 , H02M1/08
摘要： A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.
摘要翻译：电路包括第一场效应晶体管和第二场效应晶体管。第一场效应晶体管包括具有漏极，源极，栅极和第一附加电极的第一二极管。第二场效应晶体管包括具有漏极，源极，栅极和第二附加电极的第二二极管。第一开关选择性地连接第一场效应晶体管的栅电极和漏电极。第二开关选择性地连接第二场效应晶体管的栅电极和漏电极。控制电路控制第一和第二开关。第一附加电极耦合到第二场效应晶体管的栅电极，第二附加电极耦合到第一场效应晶体管的栅电极。

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