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1. 发明授权

US09064809B2 Method for removing oxide film formed on surface of silicon wafer 有权
标题翻译：去除在硅晶片表面形成的氧化膜的方法
公开(公告)号：US09064809B2
公开(公告)日：2015-06-23
申请号：US13760416
申请日：2013-02-06
申请人： SUMCO CORPORATION
发明人： Hiroyuki Matsuyama , Chieko Takada , Junichi Matsuo , Hiroyuki Komatsu
IPC分类号： H01L21/306 , H01L21/02 , H01L21/311
CPC分类号： H01L21/30604 , H01L21/02658 , H01L21/31116 , H01L21/31144 , Y10T428/24488
摘要： Disclosed is a method for removing an oxide film formed on a surface of a silicon wafer, comprising steps of: preparing a silicon wafer having an oxide film formed thereon; arranging a discoid wafer mounting stage, which has a contact portion with the oxide film being formed of an acid-resistant resin layer, in a reaction container of a vapor-phase etching apparatus; mounting the silicon wafer on the mounting stage in such a manner that a wafer center coincides with a central axis of the mounting stage; and circulating a hydrogen fluoride containing gas into the reaction container and removing the oxide film from an interface between a chamfered surface and a wafer lower surface toward the inner side of the wafer until a desired interval a is obtained, wherein the desired interval a is adjusted by changing a stage diameter of the mounting stage.
摘要翻译：公开了一种去除形成在硅晶片表面上的氧化膜的方法，包括以下步骤：制备其上形成有氧化膜的硅晶片; 在气相蚀刻装置的反应容器中配置与氧化膜的接触部分由耐酸树脂层形成的盘状晶片安装台; 将硅晶片以使得晶片中心与安装台的中心轴线重合的方式安装在安装台上; 并将含氟化氢的气体循环到反应容器中，并从倒角表面和晶片下表面之间的界面朝向晶片的内侧除去氧化膜，直到获得期望的间隔a，其中所需的间隔a被调整通过改变安装台的平台直径。

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