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1. 发明申请

US20150318222A1 METHOD OF EVALUATING METAL CONTAMINATION IN SEMICONDUCTOR WAFER AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER 有权
标题翻译：在半导体波导中评估金属污染的方法和制造半导体波形的方法
公开(公告)号：US20150318222A1
公开(公告)日：2015-11-05
申请号：US14647963
申请日：2014-01-24
申请人： SUMCO CORPORATION
发明人： Kei MATSUMOTO , Kazutaka ERIGUCHI , Noritomo MITSUGI , Tsuyoshi KUBOTA
IPC分类号： H01L21/66
CPC分类号： H01L22/14 , H01L22/12 , H01L22/20
摘要： An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor wafer that has been subjected to a heat treatment, which comprises obtaining analysis values by analyzing a plurality of analysis points on a surface of the semiconductor wafer by a first analysis method or a second analysis method, wherein in the first analysis method, analysis values employed in evaluation decrease as an amount of contamination by a metal element that is to be evaluated increases, and in the second analysis method, analysis values employed in evaluation increase as an amount of contamination by a metal element that is to be evaluated increases, and wherein determination of presence or absence of localized contamination by the metal element that is to be evaluated is made by evaluating the analysis values based on the normal value specified by a probability distribution function.
摘要翻译：本发明的一个方面涉及一种评估已经进行了热处理的半导体晶片中的金属污染的方法，该方法包括通过第一次分析来分析半导体晶片表面上的多个分析点来获得分析值方法或第二分析方法，其中在第一分析方法中，评价中使用的分析值随着待评价的金属元素的污染量的减少而增加，在第二分析方法中，评价中使用的分析值增加为要评估的金属元素的污染量增加，并且其中通过基于由概率指定的常规值评估分析值来确定待评估的金属元素的有无局部污染的存在或不存在分配功能。

2. 发明申请

US20180038797A1 METHOD OF EVALUATING SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：US20180038797A1
公开(公告)日：2018-02-08
申请号：US15557221
申请日：2015-12-16
申请人： SUMCO CORPORATION
发明人： Kazutaka ERIGUCHI , Tsuyoshi KUBOTA
IPC分类号： G01N21/64 , H01T19/02 , H01L21/02 , G01N21/95 , H01L21/66
CPC分类号： G01N21/6489 , G01N21/9501 , H01L21/0223 , H01L21/02299 , H01L22/12 , H01T19/02
摘要： Provided is a method of evaluating a semiconductor substrate, which evaluates quality of the semiconductor substrate by a photoluminescence measurement, wherein the evaluation by the photoluminescence measurement includes, after subjecting a surface of an evaluation-target semiconductor substrate to a pretreatment, irradiating the surface with excitation light, and then detecting emission obtained from the surface having been irradiated with the excitation light, and the pretreatment includes subjecting the surface of the evaluation-target semiconductor substrate to be irradiated with the excitation light to an oxide film formation treatment and charging the surface of the formed oxide film by corona discharge.

3. 发明申请

US20190162668A1 METHOD OF EVALUATING CARBON CONCENTRATION OF SILICON SAMPLE, METHOD OF EVALUATING SILICON WAFER MANUFACTURING PROCESS, METHOD OF MANUFACTURING SILICON WAFER, METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL INGOT, SILICON SINGLE CRYSTAL INGOT AND SILICON WAFER 审中-公开
公开(公告)号：US20190162668A1
公开(公告)日：2019-05-30
申请号：US16318638
申请日：2017-06-14
申请人： SUMCO CORPORATION
发明人： Kazutaka ERIGUCHI , Shuichi SAMATA , Syun SASAKI
IPC分类号： G01N21/64 , G01N21/95 , G01N21/27 , H01J37/30 , H01J37/31 , H01L21/66
摘要： Provided is a method of evaluating carbon concentration of a silicon sample, which includes: forming an oxide film on at least a part of a surface of an evaluation-target silicon sample; irradiating a particle beam onto a surface of the oxide film; irradiating excitation light having energy larger than a band gap of silicon onto the surface of the oxide film, onto which the particle beam has been irradiated; measuring intensity of photoluminescence emitted from the evaluation-target silicon sample irradiated with the excitation and evaluating carbon concentration of the evaluation-target silicon sample on the basis of the measured intensity of photoluminescence, wherein the photoluminescence is band-edge luminescence of silicon.

4. 发明申请

US20190064098A1 METHOD OF MEASURING CARBON CONCENTRATION OF SILICON SAMPLE, METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL INGOT, SILICON SINGLE CRYSTAL INGOT AND SILICON WAFER 审中-公开
公开(公告)号：US20190064098A1
公开(公告)日：2019-02-28
申请号：US16092364
申请日：2017-01-18
申请人： SUMCO CORPORATION
发明人： Kazutaka ERIGUCHI , Shuichi SAMATA , Noritomo MITSUGI , Ayumi MASADA
IPC分类号： G01N27/24 , C30B29/06 , C30B15/20
摘要： Provided is a method of measuring a carbon concentration of a silicon sample, the method including introducing hydrogen atoms into a measurement-target silicon sample; subjecting the measurement-target silicon sample into which hydrogen atoms have been introduced to evaluation by an evaluation method of evaluating a trap level in a silicon band gap, without an electron beam irradiation treatment; and determining the carbon concentration of the measurement-target silicon sample on the basis of an evaluation result at least one trap level selected from the group consisting of Ec-0.10 eV, Ec-0.13 eV and Ec-0.15 eV, among the evaluation results obtained by the evaluation, wherein the determined carbon concentration is lower than 1.0E+16 atoms/cm3.

5. 发明申请

US20180179661A1 METHOD OF EVALUATING MANUFACTURING PROCESS OF SILICON MATERIAL AND MANUFACTURING METHOD OF SILICON MATERIAL 审中-公开
公开(公告)号：US20180179661A1
公开(公告)日：2018-06-28
申请号：US15788142
申请日：2017-10-19
申请人： SUMCO CORPORATION
发明人： Noritomo MITSUGI , Kazutaka ERIGUCHI , Shuichi SAMATA , Ayumi MASADA
IPC分类号： C30B25/16 , C30B29/06 , C30B25/20 , G01R31/26 , H01L21/66
CPC分类号： C30B25/16 , C30B25/20 , C30B29/06 , G01R31/2648 , H01L22/12 , H01L22/20
摘要： The method is a method of evaluating a manufacturing process of a silicon material, wherein the manufacturing process includes a process that uses a member containing a carbon-containing sintered body, and the method of evaluating the manufacturing process of a silicon material includes performing DLTS measurement on a silicon material manufactured in the manufacturing process, and estimating a heavy metal contamination source of a silicon material manufactured in the manufacturing process with an indicator in the form of presence/absence of detection of a peak of a carbon-related level and presence/absence of detection of a peak of a heavy metal-related level in a DLTS spectrum obtained by the DLTS measurement.

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