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1. 发明授权

US11094537B2 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device 有权
公开(公告)号：US11094537B2
公开(公告)日：2021-08-17
申请号：US16787700
申请日：2020-02-11
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Keiji Ishibashi , Akihiro Hachigo , Yuki Hiromura , Naoki Matsumoto , Seiji Nakahata , Fumitake Nakanishi , Takuya Yanagisawa , Koji Uematsu , Yuki Seki , Yoshiyuki Yamamoto , Yusuke Yoshizumi , Hidenori Mikami
IPC分类号： H01L21/02 , H01L21/306 , H01L21/683 , H01L21/762 , B32B7/04 , H01L29/20 , B32B7/06 , B32B7/02 , H01L33/02 , H01L33/00 , H01L33/12
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

2. 发明授权

US08748890B2 Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method 有权
标题翻译：制造半导体晶片的方法以及用于该方法的复合基板和复合基板
公开(公告)号：US08748890B2
公开(公告)日：2014-06-10
申请号：US13838875
申请日：2013-03-15
申请人： Sumitomo Electric Industries, Ltd.
发明人： Yuki Seki , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
IPC分类号： H01L29/02 , H01L21/762 , H01L29/22
CPC分类号： H01L29/0684 , B32B2264/102 , B32B2307/704 , B32B2457/14 , H01L21/76254
摘要： A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device.
摘要翻译：本发明的制造半导体晶片的方法包括以下步骤：通过在基底上形成表面RMS粗糙度不大于1.0nm的基面平坦化层来获得复合基底; 通过将半导体晶体层附着到所述复合基底的所述基面平坦化层所在的一侧来获得复合基板; 在复合衬底的半导体晶体层上生长至少一个半导体层; 以及通过湿法蚀刻去除基底表面平坦化层，从而将半导体晶体层与基底分离，从而获得包括半导体晶体层和半导体层的半导体晶片。因此，提供一种制造半导体晶片的方法，而不管基底的类型如何，以及适用于该制造方法的复合基底和复合基底都能有效地制造半导体晶片，以有效地制造半导体器件。

3. 发明授权

US10600676B2 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device 有权
公开(公告)号：US10600676B2
公开(公告)日：2020-03-24
申请号：US15879018
申请日：2018-01-24
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Keiji Ishibashi , Akihiro Hachigo , Yuki Hiromura , Naoki Matsumoto , Seiji Nakahata , Fumitake Nakanishi , Takuya Yanagisawa , Koji Uematsu , Yuki Seki , Yoshiyuki Yamamoto , Yusuke Yoshizumi , Hidenori Mikami
IPC分类号： H01L21/02 , H01L21/306 , H01L21/683 , H01L21/762 , B32B7/02 , B32B7/04 , H01L29/20 , B32B7/06 , H01L33/02 , H01L33/00
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

4. 发明授权

US09923063B2 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same 有权
公开(公告)号：US09923063B2
公开(公告)日：2018-03-20
申请号：US14767706
申请日：2013-11-12
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Keiji Ishibashi , Takuya Yanagisawa , Koji Uematsu , Yuki Seki , Yoshiyuki Yamamoto
IPC分类号： H01L21/683 , H01L29/20 , H01L33/32 , H01L33/00 , H01L21/02 , H01L21/306
CPC分类号： H01L29/2003 , C23C16/303 , H01L21/02389 , H01L21/0242 , H01L21/02439 , H01L21/0254 , H01L21/02587 , H01L21/02609 , H01L21/30604 , H01L21/30621 , H01L21/30625 , H01L21/6835 , H01L33/0079 , H01L33/32 , H01L2221/68327 , H01L2221/68345 , H01L2221/6835 , H01L2221/68381 , H01L2924/0002 , H01L2924/3511 , H01L2924/00
摘要： A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 μm that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film to a mean value mt of the thickness thereof is 0.01 or more and 0.5 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mo of the absolute value of the off angle is 0.005 or more and 0.6 or less.

5. 发明授权

US09917004B2 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device 有权
公开(公告)号：US09917004B2
公开(公告)日：2018-03-13
申请号：US14419315
申请日：2013-09-04
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Keiji Ishibashi , Akihiro Hachigo , Yuki Hiromura , Naoki Matsumoto , Seiji Nakahata , Fumitake Nakanishi , Takuya Yanagisawa , Koji Uematsu , Yuki Seki , Yoshiyuki Yamamoto , Yusuke Yoshizumi , Hidenori Mikami
IPC分类号： H01L21/762 , B32B7/04 , H01L29/20 , B32B7/06 , B32B7/02 , H01L33/02 , H01L33/00
CPC分类号： H01L21/76251 , B32B7/02 , B32B7/04 , B32B7/06 , B32B2307/20 , H01L21/76254 , H01L21/76256 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L2924/0002 , Y10T428/24298 , Y10T428/24322 , Y10T428/24331 , Y10T428/2495 , Y10T428/24975 , Y10T428/26 , Y10T428/265 , Y10T428/31 , H01L2924/00
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

6. 发明申请

US20150194442A1 GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译： III族氮化物复合基材及其制造方法，以及制造III族氮化物半导体器件的方法
公开(公告)号：US20150194442A1
公开(公告)日：2015-07-09
申请号：US14419315
申请日：2013-09-04
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Keiji Ishibashi , Akihiro Hachigo , Yuki Hiromura , Naoki Matsumoto , Seiji Nakahata , Fumitake Nakanishi , Takuya Yanagisawa , Koji Uematsu , Yuki Seki , Yoshiyuki Yamamoto , Yusuke Yoshizumi , Hidenori Mikami
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762
CPC分类号： H01L21/76251 , B32B7/02 , B32B7/04 , B32B7/06 , B32B2307/20 , H01L21/76254 , H01L21/76256 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L2924/0002 , Y10T428/24298 , Y10T428/24322 , Y10T428/24331 , Y10T428/2495 , Y10T428/24975 , Y10T428/26 , Y10T428/265 , Y10T428/31 , H01L2924/00
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.
摘要翻译：提供具有低薄层电阻并且以高产率制造的III族氮化物复合衬底及其制造方法以及使用III族氮化物复合衬底的III族氮化物半导体器件的制造方法。 III族氮化物复合衬底包括III族氮化物膜和由与III族氮化物膜不同的化学成分的材料形成的支撑衬底。 III族氮化物膜以直接方式和间接方式之一连接到支撑衬底。 III族氮化物膜的厚度为10μm以上。 III族氮化物膜侧主表面的薄层电阻为200Ω·cmgr / sq以下。

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