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1. 发明授权

US10090337B2 Thin film transistor with a reaction layer creating oxygen vacancies in an oxide semiconductor 有权
公开(公告)号：US10090337B2
公开(公告)日：2018-10-02
申请号：US15204433
申请日：2016-07-07
申请人： Samsung Display Co., Ltd.
发明人： Hiroshi Okumura , Je-Hun Lee , Jin-Hyun Park
IPC分类号： H01L27/12 , H01L27/32 , H01L29/66 , H01L29/786 , H01L21/385
摘要： A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.

2. 发明授权

US11556002B2 Laser annealing apparatus and method of manufacturing substrate having poly-si layer using the same 有权
公开(公告)号：US11556002B2
公开(公告)日：2023-01-17
申请号：US16802011
申请日：2020-02-26
申请人： Samsung Display Co., Ltd.
发明人： Jihwan Kim , Jongjun Baek , Byungsoo So , Hiroshi Okumura
IPC分类号： G02B26/12 , G02F1/07 , H01L21/67 , H01L21/02 , B23K26/354 , B23K26/064 , B23K26/082
摘要： Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.

3. 发明授权

US09184181B2 Display substrate including a thin film transistor and method of manufacturing the same 有权
标题翻译：包括薄膜晶体管的显示基板及其制造方法
公开(公告)号：US09184181B2
公开(公告)日：2015-11-10
申请号：US14454822
申请日：2014-08-08
申请人： Samsung Display Co., LTD.
发明人： Je-Hun Lee , Sung-Hoon Yang , Hiroshi Okumura , Jin-Ho Hwang
IPC分类号： H01L21/00 , H01L21/84 , H01L29/10 , H01L29/12 , H01L29/04 , H01L27/14 , H01L27/12
CPC分类号： H01L27/1225 , H01L27/1259 , H01L29/41733 , H01L29/7869 , H01L29/78696
摘要： A display substrate includes a gate electrode on a base substrate, an active pattern which overlaps the gate electrode and includes a metal oxide semiconductor, an insulation pattern on the active pattern, a source electrode which contacts the active pattern, a drain electrode which contacts the active pattern and is spaced apart from the source electrode, and a first passivation layer which covers the active pattern and the insulation pattern, and includes fluorine, where the active pattern includes a first portion which directly contacts the insulation pattern and overlaps the gate electrode and the insulation pattern, a second portion which contacts the first passivation layer and has an electrical conductivity substantially larger than that of the first portion, a third portion which contacts the first passivation layer, has an electrical conductivity substantially larger than that of the first portion and is spaced apart from the second portion.
摘要翻译：显示基板包括在基底基板上的栅极电极，与栅电极重叠并且包括金属氧化物半导体的有源图案，有源图案上的绝缘图案，与有源图案接触的源极电极，并且与源电极间隔开，以及覆盖有源图案和绝缘图案并包括氟的第一钝化层，其中有源图案包括直接接触绝缘图案并与栅电极重叠的第一部分，以及所述绝缘图案是接触所述第一钝化层并具有比所述第一部分的导电性大的电导率的第二部分，与所述第一钝化层接触的第三部分具有比所述第一部分的电导率大的电导率，与第二部分间隔开。

4. 发明授权

US11335561B2 Apparatus for laser irradiation and method for laser irradiation 有权
公开(公告)号：US11335561B2
公开(公告)日：2022-05-17
申请号：US16907029
申请日：2020-06-19
申请人： Samsung Display Co., Ltd.
发明人： Hiroshi Okumura , Jong Jun Baek , Byung Soo So
IPC分类号： H01L21/20 , H01L21/268 , H01L21/02 , B23K26/06
摘要： A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.

5. 发明授权

US11227764B2 Laser irradiation method and laser irradiation apparatus 有权
公开(公告)号：US11227764B2
公开(公告)日：2022-01-18
申请号：US16592087
申请日：2019-10-03
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Hiroshi Okumura , Jongjun Baek , Dong-Sung Lee
IPC分类号： H01L21/02 , H01L21/67
摘要： A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.

6. 发明授权

US09406700B2 Thin film transistors with oxide semiconductor having low resistance patterns with oxygen deficiencies 有权
标题翻译：具有氧化物半导体的薄膜晶体管具有低电阻图形并具有氧缺陷
公开(公告)号：US09406700B2
公开(公告)日：2016-08-02
申请号：US14174989
申请日：2014-02-07
申请人： Samsung Display Co., LTD.
发明人： Hiroshi Okumura , Je-Hun Lee , Jin-Hyun Park
IPC分类号： H01L27/12 , H01L27/32 , H01L29/66 , H01L29/786
CPC分类号： H01L27/127 , H01L21/385 , H01L27/1225 , H01L27/1248 , H01L27/3244 , H01L29/66969 , H01L29/78618 , H01L29/7869
摘要： A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.
摘要翻译：薄膜晶体管包括在基板上的栅电极，覆盖基板上的栅电极的栅极绝缘层，设置在栅极绝缘层上并且包括叠加在栅电极上的沟道部分的氧化物半导体图案，以及低分别设置在沟道部分的边缘并且包括氧空位的电阻图案，氧化物半导体图案上的沟道钝化层，覆盖氧化物半导体图案和沟道钝化层的反应层，并且包括金属氧化物，以及源电极和接触氧化物半导体图案的漏电极。

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