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1. 发明授权

US11626429B2 Display device and method of fabricating the same 有权
公开(公告)号：US11626429B2
公开(公告)日：2023-04-11
申请号：US17071579
申请日：2020-10-15
申请人： Samsung Display Co., LTD.
发明人： Sang Sub Kim , Keun Woo Kim , Ji Yeong Shin , Yong Su Lee , Myoung Geun Cha , Ki Seok Choi , Sang Gun Choi
IPC分类号： H01L29/786 , H01L27/12 , H01L27/32 , H01L21/225 , H01L21/28 , G09G3/32 , H01L21/265
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

2. 发明授权

US09147741B2 Thin film transistor display panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管显示面板及其制造方法
公开(公告)号：US09147741B2
公开(公告)日：2015-09-29
申请号：US13892574
申请日：2013-05-13
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Hyun Jae Na , Yoon Ho Khang , Sang Ho Park , Dong Hwan Shim , Se Hwan Yu , Yong Su Lee , Myoung Geun Cha
IPC分类号： H01L21/84 , H01L21/20 , H01L29/49 , H01L29/786
CPC分类号： H01L29/4908 , H01L29/518 , H01L29/78603 , H01L29/78633
摘要： A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管显示面板包括基板，形成在基板上的第一绝缘层，形成在第一绝缘层上的半导体层，形成在半导体层上的第二绝缘层，以及形成在第二绝缘层上的栅电极，其中第一绝缘层包括遮光材料，第一绝缘层的厚度大于或等于第二绝缘层的厚度。

3. 发明授权

US11616108B2 Organic light emitting diode display 有权
公开(公告)号：US11616108B2
公开(公告)日：2023-03-28
申请号：US16661329
申请日：2019-10-23
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Joon Woo Bae , Mee Jae Kang , Thanh Tien Nguyen , Kyoung Won Lee , Yong Su Lee , Jae Seob Lee , Gyoo Chul Jo , Myoung Geun Cha
IPC分类号： H01L27/32
摘要： An organic light emitting diode display includes a substrate, an overlap layer on the substrate, a semiconductor layer on the overlap layer, a first gate conductor on the semiconductor layer, a second gate conductor on the first gate conductor, a data conductor on the second gate conductor, a driving transistor on the overlap layer, and an organic light emitting diode connected with the driving transistor. The driving transistor includes, in the semiconductor layer, a first electrode, a second electrode, with a channel therebetween. A gate electrode of the first gate conductor overlaps the channel. The overlap layer overlaps the channel of the driving transistor and at least a portion of the first electrode. A storage line of the second gate conductor receives a driving voltage through a driving voltage line in the data conductor. The overlap layer receives a constant voltage.

4. 发明授权

US10930725B2 Organic light emitting diode display device 有权
公开(公告)号：US10930725B2
公开(公告)日：2021-02-23
申请号：US16575643
申请日：2019-09-19
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Myoung Geun Cha , Sang Gun Choi , Sang Sub Kim , Ji Yeong Shin , Yong Su Lee , Ki Seok Choi
IPC分类号： H01L27/32
摘要： An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

5. 发明授权

US10826026B2 Display device and manufacturing method thereof 有权
公开(公告)号：US10826026B2
公开(公告)日：2020-11-03
申请号：US16203784
申请日：2018-11-29
申请人： Samsung Display Co., Ltd.
发明人： Myoung Geun Cha , Sang Gun Choi , Joon Woo Bae , Ji Yeong Shin , Yong Su Lee
IPC分类号： H01L51/56 , H01L27/32 , H01L21/308 , H01L51/52
摘要： A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.

6. 发明授权

US10453911B2 Display device 有权
公开(公告)号：US10453911B2
公开(公告)日：2019-10-22
申请号：US15965160
申请日：2018-04-27
申请人： Samsung Display Co., Ltd.
发明人： Myoung Geun Cha , Sang Gun Choi , Thanh Tien Nguyen , Kyoung Won Lee , Yong Su Lee , Joo Hye Jung
IPC分类号： H01L27/32 , G09G3/3233 , G09G3/3258
摘要： A display device includes first semiconductor pattern including a first channel portion, a first electrode connected to a driving voltage line, and a second electrode connected to a light emitting element, a first insulating, a first conductive layer including a first gate electrode, a second insulating layer, a second conductive layer including an initialization power line, a third insulating layer, an upper semiconductor layer including a second semiconductor pattern including a second channel portion, a third electrode, and a fourth electrode connected to the first gate electrode, and a third semiconductor pattern including a third channel portion, a fifth electrode connected to the third electrode, and a sixth electrode connected to the second electrode, a fourth insulating layer, and a third conductive layer including a scan line and a control signal line, wherein the upper semiconductor layer does not overlap the first gate electrode and the initialization power line.

7. 发明授权

US09768309B2 Thin film transistor and thin film transistor array panel including the same 有权
公开(公告)号：US09768309B2
公开(公告)日：2017-09-19
申请号：US15194841
申请日：2016-06-28
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L27/3262 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

8. 发明申请

US20160141558A1 ORGANIC LIGHT-EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US20160141558A1
公开(公告)日：2016-05-19
申请号：US14708049
申请日：2015-05-08
申请人： Samsung Display Co., Ltd.
发明人： Myoung Geun Cha , Jin Goo Jung , Yoon Ho Khang , Se Mi Kim
IPC分类号： H01L51/56 , H01L51/52 , H01L27/32
CPC分类号： H01L51/56 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1255
摘要： An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.
摘要翻译：公开了OLED显示器及其制造方法。一方面，显示器包括形成在衬底上并被配置为传送扫描信号，数据线和与扫描线交叉的驱动电压线并分别被配置为传送数据电压和驱动电压的扫描线，以及切换电连接到扫描线和数据线并且包括被配置为输出数据电压的开关漏极。显示器还包括驱动晶体管，其包括驱动栅电极，驱动漏电极和与开关漏电极电连接的驱动源电极。显示器还包括存储电容器，其包括电连接到驱动栅电极的第一存储电极和形成在与驱动电压线相同的层上的第二存储电极。

9. 发明申请

US20140167040A1 THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，包括其的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20140167040A1
公开(公告)日：2014-06-19
申请号：US14184361
申请日：2014-02-19
申请人： Samsung Display Co., Ltd.
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L27/3262 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管包括氧化物半导体。源电极和漏电极彼此面对。源电极和漏电极分别位于氧化物半导体的两个相对侧。低导电区域位于源电极或漏电极与氧化物半导体之间。绝缘层位于氧化物半导体和低导电区域上。栅电极位于绝缘层上。绝缘层覆盖氧化物半导体和低导电区域。低导电区域的载流子浓度低于源电极或漏电极的载流子浓度。

10. 发明授权

US10861978B2 Display device 有权
公开(公告)号：US10861978B2
公开(公告)日：2020-12-08
申请号：US16231781
申请日：2018-12-24
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

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