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    • 10. 发明授权
    • Thin film transistor array panel and method of manufacturing the same
    • 薄膜晶体管阵列面板及其制造方法
    • US09076691B2
    • 2015-07-07
    • US13875722
    • 2013-05-02
    • Samsung Display Co., Ltd.
    • Shin Il ChoiSang Gab KimSu Bin BaeYu-Gwang Jeong
    • H01L21/00H01L27/12H01L27/32
    • H01L27/124H01L27/1248H01L27/322H01L27/3248
    • A method of manufacturing a thin film transistor array panel includes: a gate insulating layer disposed on a gate electrode, a semiconductor disposed on the gate insulating layer, a source electrode opposite a drain electrode disposed on the semiconductor, a color filter disposed on the gate insulating layer, an overcoat disposed on the color filter and including an inorganic material. A first dry etching is performed using the photosensitive film pattern as a mask to etch the overcoat and provide a preliminary contact hole, through which a portion of the color filter is exposed. A second dry etching is performed using the overcoat as a mask to etch the color filter through the preliminary contact hole and to provide a contact hole, through which a portion of the drain electrode is exposed. A pixel electrode is connected to the drain electrode through the contact hole, on the overcoat.
    • 制造薄膜晶体管阵列面板的方法包括:设置在栅电极上的栅极绝缘层,设置在栅极绝缘层上的半导体,设置在半导体上的漏电极相对的源电极,设置在栅极上的滤色器 绝缘层,设置在滤色器上并包括无机材料的外涂层。 使用感光膜图案作为掩模进行第一干蚀刻,以蚀刻外涂层并提供初步接触孔,滤色片的一部分穿过该预接触孔。 使用外涂层作为掩模进行第二干蚀刻,以通过预接触孔蚀刻滤色器,并提供接触孔,漏电极的一部分暴露在该接触孔中。 像素电极通过外罩上的接触孔连接到漏电极。