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1. 发明申请

US20130143373A1 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造氮化物半导体器件的方法
公开(公告)号：US20130143373A1
公开(公告)日：2013-06-06
申请号：US13754233
申请日：2013-01-30
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L29/66
CPC分类号： H01L29/66431 , H01L29/2003 , H01L29/404 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： A method of manufacturing a nitride semiconductor device including: forming a nitride semiconductor layer over a substrate wherein the nitride semiconductor layer has a 2DEG channel inside; forming a drain electrode in ohmic contact with the nitride semiconductor layer and a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, wherein the source electrode has an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; forming a dielectric layer on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and forming a gate electrode on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed on the dielectric layer over a drain-side edge portion of the source electrode.
摘要翻译：一种制造氮化物半导体器件的方法，包括：在衬底上形成氮化物半导体层，其中氮化物半导体层内部具有2DEG通道; 形成与所述氮化物半导体层欧姆接触的漏电极和与所述漏电极间隔开的与所述氮化物半导体层肖特基接触的源电极，其中所述源电极具有与所述氮化物半导体层内部欧姆接触的欧姆图案; 在所述氮化物半导体层上在所述漏电极和所述源电极之间以及所述源电极的至少一部分上形成介电层; 以及在所述电介质层上形成与所述漏电极间隔开的栅电极，其中，所述栅电极的一部分形成在所述源电极的漏极侧边缘部分上的所述电介质层上。

2. 发明授权

US08883599B2 2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same 有权
标题翻译： 2DEG肖特基二极管以氮化物形成复合肖特基/欧姆电极结构及其制造方法
公开(公告)号：US08883599B2
公开(公告)日：2014-11-11
申请号：US13710631
申请日：2012-12-11
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L21/336
CPC分类号： H01L29/66007 , H01L21/02521 , H01L29/0692 , H01L29/2003 , H01L29/66143 , H01L29/872
摘要： A method for manufacturing a semiconductor device includes preparing a base substrate; forming a semiconductor layer on the base substrate; forming an ohmic electrode part having ohmic electrode lines, on the semiconductor layer; and forming a Schottky electrode part, which is disposed on the semiconductor layer to be spaced apart from the ohmic electrode lines and has Schottky electrode lines parallel to the ohmic electrode lines, wherein forming the ohmic electrode part further comprises forming an ohmic electrode plate connected to one end of the ohmic electrode lines, forming the Schottky electrode part further comprises forming a Schottky electrode plate connected one end of the Schottky electrode lines, and one line of the Schottky electrode lines is disposed between two of the ohmic electrode lines to thereby achieve an interdigited configuration in which the ohmic electrode part and the Schottky electrode part are formed.
摘要翻译：一种制造半导体器件的方法包括：制备基底; 在基底基板上形成半导体层; 在半导体层上形成具有欧姆电极线的欧姆电极部分; 以及形成肖特基电极部件，其设置在所述半导体层上以与所述欧姆电极线间隔开并且具有与所述欧姆电极线平行的肖特基电极线，其中形成所述欧姆电极部分还包括形成欧姆电极板，形成肖特基电极部分的欧姆电极线的一端还包括形成连接肖特基电极线的一端的肖特基电极板，并且将一行肖特基电极线设置在两个欧姆电极线之间，从而实现形成欧姆电极部和肖特基电极部的交叉配置。

3. 发明授权

US08933531B2 Semiconductor device having schottky diode structure 有权
标题翻译：具有肖特基二极管结构的半导体器件
公开(公告)号：US08933531B2
公开(公告)日：2015-01-13
申请号：US13666393
申请日：2012-11-01
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Woo Cul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L27/14 , H01L29/872 , H01L29/40 , H01L29/66 , H01L29/20 , H01L29/205 , H01L29/47 , H01L29/778
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/475 , H01L29/66212 , H01L29/7787
摘要： A semiconductor device including a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) generated within the semiconductor layer; a plurality of first ohmic electrodes which are disposed on the central region of the semiconductor layer and have island-shaped cross sections; a second ohmic electrode which is disposed on edge regions of the semiconductor layer; and a Schottky electrode part has first bonding portions bonded to the first ohmic electrodes, and a second bonding portion bonded to the semiconductor layer. A depletion region is provided to be spaced apart from the 2DEG when the semiconductor device is driven at an on-voltage and is provided to be expanded to the 2DEG when the semiconductor device is driven at an off-voltage, the depletion region being generated within the semiconductor layer by bonding the semiconductor layer and the second bonding portion.
摘要翻译：一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有在所述半导体层内产生的二维电子气体（2DEG）; 多个第一欧姆电极，其设置在半导体层的中心区域上并且具有岛状横截面; 设置在半导体层的边缘区域上的第二欧姆电极; 并且肖特基电极部分具有接合到第一欧姆电极的第一接合部分和接合到半导体层的第二接合部分。当半导体器件以导通电压驱动时，耗尽区被提供为与2DEG间隔开，并且当半导体器件在截止电压下被驱动时被提供以扩展到2DEG，耗尽区在半导体层通过接合半导体层和第二接合部分。

4. 发明申请

US20130102135A1 2DEG SCHOTTKY DIODE FORMED IN NITRIDE MATERIAL WITH A COMPOSITE SCHOTTKY/OHMIC ELECTRODE STRUCTURE AND METHOD OF MAKING THE SAME 有权
标题翻译：具有复合肖特基/ OHMIC电极结构的氮化物中形成的2DEG肖特基二极管及其制造方法
公开(公告)号：US20130102135A1
公开(公告)日：2013-04-25
申请号：US13710631
申请日：2012-12-11
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Woo Chul JEON , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/66 , H01L21/36
CPC分类号： H01L29/66007 , H01L21/02521 , H01L29/0692 , H01L29/2003 , H01L29/66143 , H01L29/872
摘要： A method for manufacturing a semiconductor device includes preparing a base substrate; forming a semiconductor layer on the base substrate; forming an ohmic electrode part having ohmic electrode lines, on the semiconductor layer; and forming a Schottky electrode part, which is disposed on the semiconductor layer to be spaced apart from the ohmic electrode lines and has Schottky electrode lines parallel to the ohmic electrode lines, wherein forming the ohmic electrode part further comprises forming an ohmic electrode plate connected to one end of the ohmic electrode lines, forming the Schottky electrode part further comprises forming a Schottky electrode plate connected one end of the Schottky electrode lines, and one line of the Schottky electrode lines is disposed between two of the ohmic electrode lines to thereby achieve an interdigited configuration in which the ohmic electrode part and the Schottky electrode part are formed.
摘要翻译：一种制造半导体器件的方法包括：制备基底; 在基底基板上形成半导体层; 在半导体层上形成具有欧姆电极线的欧姆电极部分; 以及形成肖特基电极部件，其设置在所述半导体层上以与所述欧姆电极线间隔开并且具有与所述欧姆电极线平行的肖特基电极线，其中形成所述欧姆电极部分还包括形成欧姆电极板，形成肖特基电极部分的欧姆电极线的一端还包括形成连接肖特基电极线的一端的肖特基电极板，并且将一行肖特基电极线设置在两个欧姆电极线之间，从而实现形成欧姆电极部和肖特基电极部的交叉配置。

5. 发明申请

US20130056797A1 SEMICONDUCTOR DEVICE HAVING SCHOTTKY DIODE STRUCTURE 有权
标题翻译：具有肖特基二极管结构的半导体器件
公开(公告)号：US20130056797A1
公开(公告)日：2013-03-07
申请号：US13666393
申请日：2012-11-01
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Woo Cul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/778
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/475 , H01L29/66212 , H01L29/7787
摘要： A semiconductor device including a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) generated within the semiconductor layer; a plurality of first ohmic electrodes which are disposed on the central region of the semiconductor layer and have island-shaped cross sections; a second ohmic electrode which is disposed on edge regions of the semiconductor layer; and a Schottky electrode part has first bonding portions bonded to the first ohmic electrodes, and a second bonding portion bonded to the semiconductor layer. A depletion region is provided to be spaced apart from the 2DEG when the semiconductor device is driven at an on-voltage and is provided to be expanded to the 2DEG when the semiconductor device is driven at an off-voltage, the depletion region being generated within the semiconductor layer by bonding the semiconductor layer and the second bonding portion.
摘要翻译：一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有在所述半导体层内产生的二维电子气体（2DEG）; 多个第一欧姆电极，其设置在半导体层的中心区域上并且具有岛状横截面; 设置在半导体层的边缘区域上的第二欧姆电极; 并且肖特基电极部具有接合到第一欧姆电极的第一接合部分和接合到半导体层的第二接合部分。当半导体器件以导通电压驱动时，耗尽区被提供为与2DEG间隔开，并且当半导体器件在截止电压下被驱动时被提供以扩展到2DEG，耗尽区在半导体层通过接合半导体层和第二接合部分。

6. 发明授权

US08501557B2 Method of manufacturing nitride semiconductor device 有权
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US08501557B2
公开(公告)日：2013-08-06
申请号：US13754233
申请日：2013-01-30
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L21/336
CPC分类号： H01L29/66431 , H01L29/2003 , H01L29/404 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： A method of manufacturing a nitride semiconductor device including: forming a nitride semiconductor layer over a substrate wherein the nitride semiconductor layer has a 2DEG channel inside; forming a drain electrode in ohmic contact with the nitride semiconductor layer and a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, wherein the source electrode has an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; forming a dielectric layer on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and forming a gate electrode on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed on the dielectric layer over a drain-side edge portion of the source electrode.
摘要翻译：一种制造氮化物半导体器件的方法，包括：在衬底上形成氮化物半导体层，其中氮化物半导体层内部具有2DEG通道; 形成与所述氮化物半导体层欧姆接触的漏电极和与所述漏电极间隔开的与所述氮化物半导体层肖特基接触的源电极，其中所述源电极具有与所述氮化物半导体层内部欧姆接触的欧姆图案; 在所述氮化物半导体层上在所述漏电极和所述源电极之间以及所述源电极的至少一部分上形成介电层; 以及在所述电介质层上形成与所述漏电极间隔开的栅电极，其中，所述栅电极的一部分形成在所述源电极的漏极侧边缘部分上的所述电介质层上。

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