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1. 发明授权

US10771779B2 Method and apparatus for encoding video using variable partitions for predictive encoding, and method and apparatus for decoding video using variable partitions for predictive encoding 有权
公开(公告)号：US10771779B2
公开(公告)日：2020-09-08
申请号：US16538235
申请日：2019-08-12
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Chang-Hyun Lee , Tammy Lee , Jianle Chen , Dae-sung Cho , Woo-jin Han , Il-koo Kim
IPC分类号： H04N19/103 , H04N19/46 , H04N19/176 , H04N19/119 , H04N19/57 , H04N19/61
摘要： A video encoding method and apparatus and a video decoding method and apparatus are provided. The video encoding method includes: prediction encoding in units of a coding unit as a data unit for encoding a picture, by using partitions determined based on a first partition mode and a partition level, so as to select a partition for outputting an encoding result from among the determined partitions; and encoding and outputting partition information representing a first partition mode and a partition level of the selected partition. The first partition mode represents a shape and directionality of a partition as a data unit for performing the prediction encoding on the coding unit, and the partition level represents a degree to which the coding unit is split into partitions for detailed motion prediction.

2. 发明授权

US09930519B2 Method and apparatus for controlling home devices on group basis based upon history of the home devices 有权
公开(公告)号：US09930519B2
公开(公告)日：2018-03-27
申请号：US14549975
申请日：2014-11-21
申请人： Samsung Electronics Co., Ltd.
发明人： Kyung-Jae Kim , Chang-Hyun Kim , Chang-Hyun Lee , Ji-Yeon Han
IPC分类号： H04M3/00 , H04W8/18
CPC分类号： H04W8/186
摘要： A method and apparatus for controlling home devices on a group basis in a home network system are provided. The method includes collecting operation state information about a plurality of home devices, generating control history information about the plurality of home devices based on the collected operation state information, receiving a group control command for a group of home devices from among the plurality of home devices, the group of home devices being set based on the control history information, and controlling operations of the group of home devices according to the received group control command.

3. 发明授权

US09905572B2 Vertical memory devices with vertical isolation structures and methods of fabricating the same 有权
公开(公告)号：US09905572B2
公开(公告)日：2018-02-27
申请号：US14814623
申请日：2015-07-31
申请人： Samsung Electronics Co., Ltd.
发明人： Chang-Hyun Lee
IPC分类号： H01L29/792 , H01L27/11582 , H01L29/16 , H01L29/04 , H01L27/11578 , H01L27/11556 , H01L29/66
CPC分类号： H01L27/11582 , H01L27/11556 , H01L27/11578 , H01L29/04 , H01L29/16 , H01L29/66833 , H01L29/7926
摘要： A vertical memory device includes a substrate, a column of vertical channels on the substrate and spaced apart along a direction parallel to the substrate, respective charge storage structures on sidewalls of respective ones of the vertical channels and gate electrodes vertically spaced along the charge storage structures. The vertical memory device further includes an isolation pattern disposed adjacent the column of vertical channels and including vertical extension portions extending parallel to the vertical channels and connection portions extending between adjacent ones of the vertical extension portions.

4. 发明授权

US09761314B2 Non-volatile memory devices and methods of operating the same 有权
公开(公告)号：US09761314B2
公开(公告)日：2017-09-12
申请号：US14093717
申请日：2013-12-02
申请人： Samsung Electronics Co., Ltd.
发明人： Chang-Hyun Lee , Jung-Dal Choi
IPC分类号： H01L29/51 , H01L29/792 , G11C16/14 , G11C16/26 , G11C16/12 , H01L21/28 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11526 , H01L27/11529 , H01L29/423 , H01L29/778
CPC分类号： G11C16/12 , G11C16/14 , G11C16/26 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11526 , H01L27/11529 , H01L29/42332 , H01L29/513 , H01L29/7782 , H01L29/792 , H01L29/7923
摘要： A non-volatile memory device includes a semiconductor substrate and a tunnel insulating layer and a gate electrode. A multiple tunnel insulation layer with a plurality of layers, a charge storage insulation layer, and a multiple blocking insulation layer with layers are sequentially stacked between the gate electrode and the tunnel insulating layer. A first diffusion region and a second diffusion region in the semiconductor substrate are adjacent to opposite respective sides of the gate electrode. When a voltage is applied to the gate electrode and the semiconductor substrate to form a voltage level difference therebetween, a minimum field in the tunnel insulation layer is stronger than in the blocking insulation layer. A minimum field at a blocking insulation layer can be stronger than at a tunnel insulation layer, and the migration probability of charges through the tunnel insulation layer can be higher than through the blocking insulation layer.

5. 发明授权

US09672932B2 Nonvolatile memory device and memory system including the same 有权
公开(公告)号：US09672932B2
公开(公告)日：2017-06-06
申请号：US15094089
申请日：2016-04-08
申请人： Samsung Electronics Co., Ltd.
发明人： Chang-Hyun Lee
IPC分类号： G11C16/06 , G11C16/34 , G11C16/14 , G11C16/10 , G11C16/26 , G11C16/04 , G11C11/56
CPC分类号： G11C16/3445 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/344 , G11C16/3454
摘要： A nonvolatile memory device includes a memory cell array and a voltage generator. The memory cell array includes a plurality of planes, and each plane receives one of a first ground selection voltage and a second ground selection voltage. The voltage generator is configured to provide selectively one of the first ground selection voltage and the second ground selection voltage independently to each of the planes based on a result of an erase verification operation on each of the plurality of planes.

6. 发明授权

US09184164B2 Nonvolatile memory devices 有权
标题翻译：非易失性存储器件
公开(公告)号：US09184164B2
公开(公告)日：2015-11-10
申请号：US14134457
申请日：2013-12-19
申请人： Samsung Electronics Co., Ltd.
发明人： Chang-Hyun Lee , Jung-Dal Choi
IPC分类号： H01L21/336 , H01L27/105 , H01L27/115 , G11C16/04
CPC分类号： H01L27/1052 , G11C16/0483 , H01L27/11521 , H01L27/11524
摘要： A nonvolatile memory device includes a string selection transistor, a plurality of memory cell transistors, and a ground selection transistor electrically connected in series to the string selection transistor and to the pluralities of memory cell transistors. First impurity layers are formed at boundaries of the channels and the source/drain regions of the memory cell transistors. The first impurity layers are doped with opposite conductivity type impurities relative to the source/drain regions of the memory cell transistors. Second impurity layers are formed at boundaries between a channel and a drain region of the string selection transistor and between a channel and a source region of the ground selection transistor. The second impurity layers are doped with the same conductivity type impurities as the first impurity layers and have a higher impurity concentration than the first impurity layers.
摘要翻译：非易失性存储器件包括串选择晶体管，多个存储单元晶体管和与串选择晶体管和多个存储单元晶体管串联电连接的接地选择晶体管。在存储单元晶体管的沟道和源极/漏极区的边界处形成第一杂质层。相对于存储单元晶体管的源/漏区，第一杂质层掺杂有相反导电类型的杂质。第二杂质层形成在串选择晶体管的沟道和漏极区之间的边界处，并且在地选择晶体管的沟道和源极区之间形成。第二杂质层掺杂有与第一杂质层相同的导电类型杂质，并且具有比第一杂质层更高的杂质浓度。

7. 发明授权

US09159432B2 Method of programming a nonvolatile memory device 有权
标题翻译：非易失性存储器件编程方法
公开(公告)号：US09159432B2
公开(公告)日：2015-10-13
申请号：US13790409
申请日：2013-03-08
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Chang-Hyun Lee , Jee-Yeon Kang , Dong-Hoon Jang , Jung-Dal Choi
IPC分类号： G11C16/24 , G11C16/04 , G11C16/10
CPC分类号： G11C16/24 , G11C16/0483 , G11C16/10
摘要： In method of programming a nonvolatile memory device including first and second cell strings that are coupled to one bitline, a first channel of the first cell string and a second channel of the second cell string are precharged by applying a first voltage to the bitline, one cell string is selected from the first and second cell strings, and a memory cell included in the selected cell string is programmed by applying a second voltage greater than a ground voltage and less than the first voltage to the bitline.
摘要翻译：在编程包括耦合到一个位线的第一和第二单元串的非易失性存储器件的方法中，通过向位线施加第一电压来预充电第一单元串的第一通道和第二单元串的第二通道，一个从第一和第二单元串中选择单元串，并且通过向位线施加大于接地电压并小于第一电压的第二电压来对包括在所选单元串中的存储单元进行编程。

8. 发明授权

US11303883B2 Method and apparatus for encoding video using variable partitions for predictive encoding, and method and apparatus for decoding video using variable partitions for predictive encoding 有权
公开(公告)号：US11303883B2
公开(公告)日：2022-04-12
申请号：US16939663
申请日：2020-07-27
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Chang-Hyun Lee , Tammy Lee , Jianle Chen , Dae-sung Cho , Woo-jin Han , Il-koo Kim
IPC分类号： H04N19/103 , H04N19/119 , H04N19/176 , H04N19/57 , H04N19/46 , H04N19/61
摘要： A video encoding method and apparatus and a video decoding method and apparatus are provided. The video encoding method includes: prediction encoding in units of a coding unit as a data unit for encoding a picture, by using partitions determined based on a first partition mode and a partition level, so as to select a partition for outputting an encoding result from among the determined partitions; and encoding and outputting partition information representing a first partition mode and a partition level of the selected partition. The first partition mode represents a shape and directionality of a partition as a data unit for performing the prediction encoding on the coding unit, and the partition level represents a degree to which the coding unit is split into partitions for detailed motion prediction.

9. 发明申请

US20190281544A1 METHOD AND DEVICE FOR CONNECTING SINGLE AP DEVICE AMONG MULTIPLE AP DEVICES ON SAME NETWORK TO TERMINAL 审中-公开
公开(公告)号：US20190281544A1
公开(公告)日：2019-09-12
申请号：US16425148
申请日：2019-05-29
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hyeon-mok Ko , Dae-hyung Kwon , Duk-gu Sung , Chang-hyun Kim , Kang-jin Yoon , Chang-Hyun Lee
IPC分类号： H04W48/20 , H04W4/80 , H04W12/08 , H04L29/06 , H04W76/10 , H04L29/12
摘要： A method of connecting an access point (AP) device is provided. The method includes receiving media access control (MAC) address information of a terminal from the terminal through an external device, registering the received MAC address information, and determining whether the registered MAC address information corresponding to MAC address information registered to another AP device. In response to the registered MAC address information corresponding to the MAC address information registered to the other AP device, an AP device managing the registered MAC address information is determined among the AP device and the other AP device. A connection request is received from the terminal, and the terminal is connected to the AP device based on whether MAC address information of the connection request is corresponding to the registered MAC address information.

10. 发明授权

US09842658B2 Methods of operating nonvolatile memory devices including variable verification voltages based on program/erase cycle information 有权
公开(公告)号：US09842658B2
公开(公告)日：2017-12-12
申请号：US15132737
申请日：2016-04-19
申请人： Samsung Electronics Co., Ltd.
发明人： Chang-Hyun Lee
IPC分类号： G11C16/34 , G11C16/16 , G11C16/04 , G11C16/10 , G11C11/56
CPC分类号： G11C16/349 , G11C11/5635 , G11C16/0483 , G11C16/10 , G11C16/16 , G11C16/3404 , G11C16/3422 , G11C16/3436 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459
摘要： Methods of operating a nonvolatile memory device include performing erase loops on a memory block using a first voltage, performing program loops on memory cells of the memory block using a second voltage, and increasing the first and second voltages based on program/erase cycle information for the memory cells. The first voltage may include an erase verification voltage and the second voltage may include a program voltage.

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