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1. 发明授权

US09577000B2 Image sensors including photoelectric conversion portions with increased area 有权
标题翻译：图像传感器包括具有增加的面积的光电转换部分
公开(公告)号：US09577000B2
公开(公告)日：2017-02-21
申请号：US14956680
申请日：2015-12-02
申请人： Samsung Electronics Co., Ltd.
发明人： Dukseo Park , Sangil Jung , Changrok Moon
IPC分类号： H01L27/14 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/1463 , H01L27/14689
摘要： An image sensor can include a photoelectric conversion part of an active region of a substrate and a trench in the substrate. A transfer transistor gate electrode can extend from outside the trench into the trench and terminate in the trench to provide an exposed portion of the trench in the photoelectric conversion part.
摘要翻译：图像传感器可以包括衬底的有源区的光电转换部分和衬底中的沟槽。传输晶体管栅电极可以从沟槽的外部延伸到沟槽中并且终止于沟槽中以在光电转换部分中提供沟槽的暴露部分。

2. 发明授权

US11056523B2 Optical sensors including a light-impeding pattern 有权
公开(公告)号：US11056523B2
公开(公告)日：2021-07-06
申请号：US16831928
申请日：2020-03-27
申请人： Samsung Electronics Co., Ltd.
发明人： Jonghoon Park , Bumsuk Kim , Jung-Saeng Kim , Min Jang , Taesub Jung , Hyukjin Jung , Dongmin Keum , Changrok Moon
IPC分类号： H01L27/32 , H01L27/146 , G06K9/00 , G06F21/32 , H04N5/374
摘要： Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

3. 发明申请

US20140246707A1 Image Sensors Including Conductive Pixel Separation Structures 有权
标题翻译：包括导电像素分离结构的图像传感器
公开(公告)号：US20140246707A1
公开(公告)日：2014-09-04
申请号：US14191670
申请日：2014-02-27
申请人： Samsung Electronics Co., Ltd.
发明人： Junemo Koo , Namgil Kim , Changrok Moon , Byungjun Park , Jongcheol Shin
IPC分类号： H01L27/148
CPC分类号： H01L27/14689 , H01L27/14614 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.
摘要翻译：图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。导电互连耦合到公共偏置线，并且被配置为向其提供负电压。还讨论了相关的制造方法。

4. 发明授权

US10892289B2 Optical sensors including a light-impeding pattern 有权
公开(公告)号：US10892289B2
公开(公告)日：2021-01-12
申请号：US16784308
申请日：2020-02-07
申请人： Samsung Electronics Co., Ltd.
发明人： Jonghoon Park , BumSuk Kim , Jung-Saeng Kim , Min Jang , Taesub Jung , Hyukjin Jung , Dongmin Keum , Changrok Moon
IPC分类号： H01L27/32 , H01L27/146 , G06K9/00 , G06F21/32 , H04N5/374
摘要： Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

5. 发明授权

US09721989B2 Image sensors including conductive pixel separation structures and methods of fabricating the same 有权
公开(公告)号：US09721989B2
公开(公告)日：2017-08-01
申请号：US15349227
申请日：2016-11-11
申请人： Samsung Electronics Co., Ltd.
发明人： Junemo Koo , Namgil Kim , Changrok Moon , Byungjun Park , Jongcheol Shin
IPC分类号： H01L27/146
摘要： An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

6. 发明授权

US10672816B2 Optical sensors including a light-impeding pattern 审中-公开
公开(公告)号：US10672816B2
公开(公告)日：2020-06-02
申请号：US16519482
申请日：2019-07-23
申请人： Samsung Electronics Co., Ltd.
发明人： Jonghoon Park , BumSuk Kim , Jung-Saeng Kim , Min Jang , Taesub Jung , Hyukjin Jung , Dongmin Keum , Changrok Moon
IPC分类号： H01L27/32 , H01L27/146 , G06K9/00 , G06F21/32 , H04N5/374
摘要： Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

7. 发明授权

US09780142B1 Image sensors including conductive pixel separation structures 有权
公开(公告)号：US09780142B1
公开(公告)日：2017-10-03
申请号：US15630498
申请日：2017-06-22
申请人： Samsung Electronics Co., Ltd.
发明人： Junemo Koo , Namgil Kim , Changrok Moon , Byungjun Park , Jongcheol Shin
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14614 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

8. 发明授权

US09754994B2 Image sensors including conductive pixel separation structures and methods of fabricating the same 有权
公开(公告)号：US09754994B2
公开(公告)日：2017-09-05
申请号：US15349227
申请日：2016-11-11
申请人： Samsung Electronics Co., Ltd.
发明人： Junemo Koo , Namgil Kim , Changrok Moon , Byungjun Park , Jongcheol Shin
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14614 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

9. 发明申请

US20170062513A1 IMAGE SENSORS INCLUDING CONDUCTIVE PIXEL SEPARATION STRUCTURES AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：包含导电像素分离结构的图像传感器及其制作方法
公开(公告)号：US20170062513A1
公开(公告)日：2017-03-02
申请号：US15349227
申请日：2016-11-11
申请人： Samsung Electronics Co., Ltd.
发明人： Junemo Koo , Namgil Kim , Changrok Moon , Byungjun Park , Jongcheol Shin
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14614 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.
摘要翻译：图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。导电互连耦合到公共偏置线，并且被配置为向其提供负电压。还讨论了相关的制造方法。

10. 发明申请

US20220392941A1 IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20220392941A1
公开(公告)日：2022-12-08
申请号：US17721914
申请日：2022-04-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Doowon Kwon , Changrok Moon , Kyungtae Lim
IPC分类号： H01L27/146 , H04N5/369 , H04N5/353 , H01L23/00
摘要： Provided is an image sensor including a first layer including a first semiconductor substrate including a pixel unit in which a plurality of unit pixels are provided, and a first wiring layer provided on the first semiconductor substrate, a second layer including a second semiconductor substrate on which a plurality of transistors configured to operate a global shutter operation are provided, and a second wiring layer provided on the second semiconductor substrate, and provided on the first layer such that the first wiring layer and the second wiring layer oppose each other in a first direction, a plurality of first bonding structures bonding the first layer to the second layer based on a first bonding metal exposed on a surface of the first wiring layer being in contact with a second bonding metal exposed on a surface of the second wiring layer, a third layer including a third semiconductor substrate on which a logic circuit is provided, and a third wiring layer provided on the third semiconductor substrate, and bonded to the second layer such that the second semiconductor substrate and the third wiring layer oppose each other in the first direction, and a plurality of second bonding structures extending from the second wiring layer, and bonding the second layer to the third layer based on a bonding via penetrating the second semiconductor substrate being in contact with a third bonding metal exposed to a surface of the third wiring layer.

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