专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11183526B2 Image sensor 有权
公开(公告)号：US11183526B2
公开(公告)日：2021-11-23
申请号：US16701750
申请日：2019-12-03
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： In Ho Ro , Doowon Kwon , Seokjin Kwon , Jameyung Kim , Jinyoung Kim , Sungki Min , Kwansik Cho , Mangeun Cho , Ho-Chul Ji
IPC分类号： H01L21/00 , H01L27/146
摘要： An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.

2. 发明授权

US09541716B2 Integrated circuit device packages including optical elements 有权
标题翻译：集成电路器件封装包括光学元件
公开(公告)号：US09541716B2
公开(公告)日：2017-01-10
申请号：US14206258
申请日：2014-03-12
申请人： Samsung Electronics Co., Ltd.
发明人： Ho-Chul Ji , Seung-Hyuk Chang
IPC分类号： G02B6/42
CPC分类号： G02B6/4206 , G02B6/4203 , G02B6/4214
摘要： Integrated circuit device packages including optical elements are provided. The integrated circuit device package may include an integrated circuit device and a conductive pad on a first surface of the integrated circuit device. The conductive pad may be electrically connected to the integrated circuit device and may be configured to transmit an electrical signal. The integrated circuit device package may also include an optical element in the integrated circuit device and the optical element may be configured to transmit an optical signal through a second surface of the integrated circuit device that is opposite the first surface of the integrated circuit device.
摘要翻译：提供了包括光学元件的集成电路器件封装。集成电路器件封装可以包括在集成电路器件的第一表面上的集成电路器件和导电焊盘。导电焊盘可以电连接到集成电路器件，并且可以被配置为传输电信号。集成电路器件封装还可以包括集成电路器件中的光学元件，并且光学元件可以被配置为通过与集成电路器件的第一表面相对的集成电路器件的第二表面传输光信号。

3. 发明申请

US20210103094A1 PHOTONIC INTEGRATED CIRCUIT DEVICES AND METHODS OF FORMING SAME 有权
公开(公告)号：US20210103094A1
公开(公告)日：2021-04-08
申请号：US17102978
申请日：2020-11-24
申请人： Samsung Electronics Co., Ltd.
发明人： Keun Yeong Cho , Hyunil Byun , Ho-Chul Ji
IPC分类号： G02B6/12 , G01M11/00 , G02F1/225
摘要： A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

4. 发明授权

US09837566B2 Photodiodes including seed layer 有权
公开(公告)号：US09837566B2
公开(公告)日：2017-12-05
申请号：US14957293
申请日：2015-12-02
申请人： Samsung Electronics Co., Ltd.
发明人： Ho-Chul Ji , Keun-Yeong Cho
IPC分类号： H01L31/036 , H01L31/0384 , H01L31/028
CPC分类号： H01L31/03845 , H01L31/028 , H01L31/036 , H02S40/44 , Y02E10/547
摘要： A photodiode includes a semiconductor substrate, a crystalline layer on the semiconductor substrate, an insulating pattern layer on the crystalline layer to define a plurality of holes exposing a top surface of the crystalline layer, a seed layer in the plurality of holes and directly on the crystalline layer, and a light absorption layer on the seed layer and the insulating pattern layer.

5. 发明授权

US08866187B2 Photodetector structures including cross-sectional waveguide boundaries 有权
标题翻译：光检测器结构包括横截面波导边界
公开(公告)号：US08866187B2
公开(公告)日：2014-10-21
申请号：US13650947
申请日：2012-10-12
申请人： Samsung Electronics Co., Ltd.
发明人： Kyoung Won Na , Pil-Kyu Kang , Seong Gu Kim , Yong Hwack Shin , Ho-Chul Ji , Jung Hyung Pyo , Kyoung Ho Ha
IPC分类号： H01L31/102 , H01L31/0232 , H01L31/18 , G02B6/12 , H01L31/103 , G02B6/132 , G02B6/136
CPC分类号： H01L31/02327 , G02B6/12004 , G02B6/132 , G02B6/136 , G02B6/30 , G02B6/305 , H01L31/103 , H01L31/1804 , H01L31/1808 , Y02E10/547 , Y02P70/521
摘要： A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.
摘要翻译：光电检测器结构可以包括硅衬底和硅衬底上的硅层，其可以包括进一步包括硅横截面透射面的光传输介质的第一部分。锗层可以在硅衬底上，并且可以包括光传输介质的第二部分，邻近第一部分可以包括与硅横截面透射面对接的锗横截面透射面。

6. 发明授权

US11555959B2 Photonic integrated circuit devices and methods of forming same 有权
公开(公告)号：US11555959B2
公开(公告)日：2023-01-17
申请号：US17102978
申请日：2020-11-24
申请人： Samsung Electronics Co., Ltd.
发明人： Keun Yeong Cho , Hyunil Byun , Ho-Chul Ji
IPC分类号： G02B6/12 , G01M11/00 , G02F1/225 , H01L27/144 , H01L27/06 , G02B6/13
摘要： A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

7. 发明授权

US11428877B2 Photodetector structure 有权
公开(公告)号：US11428877B2
公开(公告)日：2022-08-30
申请号：US17037864
申请日：2020-09-30
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Keun Yeong Cho , Ho-Chul Ji
IPC分类号： G02B6/42 , H01L31/0232 , G02B6/12 , H01L31/0216
摘要： A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

8. 发明授权

US10901151B2 Optical integrated circuits 有权
公开(公告)号：US10901151B2
公开(公告)日：2021-01-26
申请号：US16217711
申请日：2018-12-12
申请人： Samsung Electronics Co., Ltd.
发明人： Keun-Yeong Cho , Ho-Chul Ji
IPC分类号： G02B6/122 , G02B6/132 , G02B6/124 , G02B6/13 , G02B6/12 , G02B6/125 , G02B6/136
摘要： Optical integrated circuits are provided. An optical integrated circuit includes a substrate including a single crystalline semiconductor material. The optical integrated circuit includes an insulation region in a trench in the substrate. The optical integrated circuit includes a first core on the insulation region. The first core includes the single crystalline semiconductor material. Moreover, the optical integrated circuit includes a second core that is spaced apart from the first core. The second core includes a material having a refractive index that is lower than that of the first core.

9. 发明授权

US10830968B2 Photodetector structure 有权
公开(公告)号：US10830968B2
公开(公告)日：2020-11-10
申请号：US16211344
申请日：2018-12-06
申请人： Samsung Electronics Co., Ltd.
发明人： Keun Yeong Cho , Ho-Chul Ji
IPC分类号： G02B6/42 , H01L31/0232 , G02B6/12 , H01L31/0216
摘要： A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

10. 发明授权

US10374699B2 Photonic integrated circuit and optical transmitter 有权
公开(公告)号：US10374699B2
公开(公告)日：2019-08-06
申请号：US15889449
申请日：2018-02-06
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Ho-Chul Ji , Keun Yeong Cho
IPC分类号： H04Q11/00 , H04B10/032
摘要： A photonic integrated circuit includes a main light source, a redundant light source, a controller, an optical switch, and a modulator. The main light source outputs main light through a main light input waveguide. The redundant light source outputs redundant light through a redundant light transmission waveguide. The controller generates a first switch signal based on a fault state of the main light source. The optical switch selectively provides the redundant light from the redundant light transmission waveguide to a redundant light input waveguide based on the first switch signal. The modulator modulates main light from the main light input waveguide or redundant light from the redundant light input waveguide and outputs a first optical signal.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式