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1. 发明申请

US20130341714A1 SEMICONDUCTOR DEVICE HAVING POWER METAL-OXIDE-SEMICONDUCTOR TRANSISTOR 有权
标题翻译：具有功率金属氧化物半导体晶体管的半导体器件
公开(公告)号：US20130341714A1
公开(公告)日：2013-12-26
申请号：US13921412
申请日：2013-06-19
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jae-june JANG , Kyu-heon CHO , Min-hwan KIM , Dong-eun JANG , Hoon CHANG
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L29/0653 , H01L29/0878 , H01L29/402 , H01L29/4238 , H01L29/4983 , H01L29/66681
摘要： A semiconductor device includes a power metal-oxide-semiconductor (MOS) transistor including a semiconductor substrate, an impurity region on the semiconductor substrate, the impurity region having a first conductivity, a drift region in the impurity region, the drift region having the first conductivity, a body region in the impurity region adjacent to the drift region, the body region having a second conductivity different from the first conductivity, a drain extension insulating layer on the drift region, a gate insulating layer and a gate electrode sequentially stacked across a portion of the body region and a portion of the drift region, a drain extension electrode on the drain extension insulating layer, a drain region contacting a side of the drift region opposite to the body region, the drain region having the first conductivity, and a source region in the body region, the source region having the second conductivity.
摘要翻译：半导体器件包括：包含半导体衬底的功率金属氧化物半导体（MOS）晶体管，半导体衬底上的杂质区域，具有第一导电性的杂质区域，杂质区域中的漂移区域，具有第一电导率，与漂移区相邻的杂质区域中的体区，具有不同于第一导电性的第二电导率的体区，漂移区上的漏极延伸绝缘层，顺序地层叠在栅极绝缘层上的栅电极所述体区的一部分和所述漂移区的一部分，所述漏极延伸绝缘层上的漏极延伸电极，与所述体区的相反侧的所述漂移区的漏极区域，所述漏极区具有所述第一导电性，以及源区域，源区域具有第二导电性。

2. 发明申请

US20190253942A1 METHOD AND APPARATUS FOR PERFORMING HANDOVER IN WIRELESS COMMUNICATION SYSTEM 审中-公开
公开(公告)号：US20190253942A1
公开(公告)日：2019-08-15
申请号：US16313282
申请日：2017-07-07
申请人： Samsung Electronics Co., Ltd.
发明人： Seungbo YOO , Daejoong KIM , Hoon CHANG , Namryul JEON
IPC分类号： H04W36/08 , H04W36/00 , H04W36/04 , H04W80/08 , H04W80/02 , H04W12/04 , H04W24/10 , H04W74/08 , H04W76/27
CPC分类号： H04W36/08 , H04W12/04 , H04W24/10 , H04W36/00 , H04W36/0038 , H04W36/04 , H04W74/0833 , H04W76/27 , H04W80/02 , H04W80/08
摘要： The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE).A handover method for a terminal according to one embodiment of the present disclosure may include: receiving, from a source cell, a message including information on one or more target cells for performing a fast handover; and performing a fast handover by reusing a radio bearer based on the received information.

3. 发明申请

US20220232374A1 METHOD AND APPARATUS FOR PERFORMING HANDOVER IN WIRELESS COMMUNICATION SYSTEM 有权
公开(公告)号：US20220232374A1
公开(公告)日：2022-07-21
申请号：US17712429
申请日：2022-04-04
申请人： Samsung Electronics Co., Ltd.
发明人： Seungbo YOO , Daejoong KIM , Hoon CHANG , Namryul JEON
IPC分类号： H04W12/041 , H04W24/10 , H04W36/04 , H04W12/0433 , H04W76/27 , H04W36/00 , H04W36/08 , H04W74/08 , H04W80/02 , H04W80/08
摘要： The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A handover method for a terminal according to one embodiment of the present disclosure may include: receiving, from a source cell, a message including information on one or more target cells for performing a fast handover; and performing a fast handover by reusing a radio bearer based on the received information.

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