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1. 发明授权

US09449918B2 Semiconductor device having fuse pattern 有权
公开(公告)号：US09449918B2
公开(公告)日：2016-09-20
申请号：US14798474
申请日：2015-07-14
申请人： Samsung Electronics Co., Ltd.
发明人： Moon-Gi Cho , Eun-Chul Ahn , Sang-Young Kim , Joo-Weon Shin , Min-Ho Lee
IPC分类号： H01L29/00 , H01L23/525 , H01L27/112 , H01L23/532 , G06F12/02
CPC分类号： H01L23/5256 , G06F12/0246 , H01L23/5329 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.

2. 发明授权

US09123725B2 Semiconductor device having fuse pattern 有权
标题翻译：具有熔丝图形的半导体器件
公开(公告)号：US09123725B2
公开(公告)日：2015-09-01
申请号：US14088654
申请日：2013-11-25
申请人： Samsung Electronics Co., Ltd.
发明人： Moon-Gi Cho , Eun-Chul Ahn , Sang-Young Kim , Joo-Weon Shin , Min-Ho Lee
IPC分类号： H01L29/80 , H01L23/525 , G06F12/02
CPC分类号： H01L23/5256 , G06F12/0246 , H01L23/5329 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.
摘要翻译：半导体器件通过防止通过修复过程的熔断体被电化学迁移电连接而提高了可靠性。半导体器件包括衬底，熔丝，其包括形成在衬底上相同电平处的第一熔丝图案和第二熔丝图案，第一熔丝图案和第二熔丝图案彼此间隔开第一宽度，使得间隙在所述保险丝设置在所述第一熔丝图案和所述第二熔丝图案之间的第一位置处，以及形成在所述第一熔丝图案和所述第二熔丝图案上的第一绝缘层，所述第一绝缘层包括位于所述第一位置上方的开口，并且具有第二宽度小于第一宽度。

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