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1. 发明授权

US09806113B2 CMOS image sensors including vertical transistor 有权
公开(公告)号：US09806113B2
公开(公告)日：2017-10-31
申请号：US15477148
申请日：2017-04-03
申请人： Samsung Electronics Co., Ltd.
发明人： Young-Sun Oh , Kyung-Ho Lee , Jung-Chak Ahn , Hee-Geun Jeong
IPC分类号： H01L27/14 , H01L27/146 , H01L31/02
CPC分类号： H01L27/14614 , H01L27/14603 , H01L27/14616 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14689 , H01L31/02016
摘要： Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

2. 发明授权

US09647016B2 CMOS image sensors including vertical transistor 有权
公开(公告)号：US09647016B2
公开(公告)日：2017-05-09
申请号：US14340719
申请日：2014-07-25
申请人： Samsung Electronics Co., Ltd.
发明人： Young-Sun Oh , Kyung-Ho Lee , Jung-Chak Ahn , Hee-Geun Jeong
IPC分类号： H01L27/14 , H01L27/146
CPC分类号： H01L27/14614 , H01L27/14603 , H01L27/14616 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14689 , H01L31/02016
摘要： Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

3. 发明授权

US09543349B2 CMOS image sensors having a transfer gate electrode, and methods of fabricating CMOS image sensors having a transfer gate electrode 有权
标题翻译：具有传输栅电极的CMOS图像传感器，以及制造具有传输栅电极的CMOS图像传感器的方法
公开(公告)号：US09543349B2
公开(公告)日：2017-01-10
申请号：US14478374
申请日：2014-09-05
申请人： Samsung Electronics Co., Ltd.
发明人： Young-Sun Oh , Kyung-Ho Lee , Hee-Geun Jeong
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14612 , H01L27/14614 , H01L27/14616 , H01L27/1463 , H01L27/14689
摘要： Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.
摘要翻译：提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器包括在基板的像素阵列中的像素阵列和外围电路区域，光电二极管和浮动扩散区域的基板，基板上的传输栅极绝缘层和传输栅极电极之间的光电二极管和浮动扩散区域，外围栅极绝缘层和周边栅极电极。传输栅极包括圆形以具有第一曲率半径的第一边缘，并且外围栅电极包括圆形的第二边缘以具有小于第一曲率半径的第二曲率半径。

4. 发明授权

US10408703B2 Method and apparatus for checking sealing state of housing 有权
公开(公告)号：US10408703B2
公开(公告)日：2019-09-10
申请号：US14207348
申请日：2014-03-12
申请人： Samsung Electronics Co., Ltd.
发明人： Kwang-Min Kil , Seong-Joon Kweon , Kyung-Ho Lee
IPC分类号： G01M3/32
摘要： A method of checking a sealing state of a housing includes starting an operation of a pressure sensor configured to measure an internal pressure of the housing. The method includes checking whether or not the housing is pressed. The method further includes checking the sealing state of the housing through checking a measured value of the pressure sensor under a pressure of the housing. An apparatus for checking a sealing state of a housing includes the housing configured to keep an internal space thereof sealed off from an outside, a pressure sensor configured to measure a pressure of the internal space, and an interface unit configured to provide to the pressure sensor a control signal that controls an operation of the pressure sensor, and provide pressure information detected through the pressure sensor.

5. 发明授权

US10014338B2 Image sensor 有权
公开(公告)号：US10014338B2
公开(公告)日：2018-07-03
申请号：US15671546
申请日：2017-08-08
申请人： Samsung Electronics Co., Ltd.
发明人： Kyung-Ho Lee
IPC分类号： H01L27/146 , H04N5/232 , H04N5/225 , G02B7/36
CPC分类号： H01L27/14625 , G02B7/365 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H04N5/2254 , H04N5/23212 , H04N5/232122 , H04N5/36961
摘要： An image sensor includes multiple unit pixels defined by a pixel isolation layer on a substrate, at least a pair of photoelectric converters in each of the unit pixels and at least an optical divider on a rear surface of the substrate at each of the unit pixels. The photoelectric converters are separated by at least a converter separator in each of the unit pixels and generate photo electrons in response to an incident light that is incident to an incident point of the respective unit pixel. The optical divider is overlapped with the incident point and divides the incident light into a plurality of split lights having the same amount of light such that each of the photoelectric converters receives the same amount of light from the split lights.

6. 发明申请

US20150333091A1 IMAGE SENSORS HAVING REDUCED INTERFERENCE BETWEEN PIXELS 有权
标题翻译：具有像素之间降低干扰的图像传感器
公开(公告)号：US20150333091A1
公开(公告)日：2015-11-19
申请号：US14595336
申请日：2015-01-13
申请人： Samsung Electronics Co., Ltd.
发明人： Young-Sun Oh , Yi-Tae Kim , Jung-Chak Ahn , Kyung-Ho Lee , Jun-Suk Lee
IPC分类号： H01L27/146
CPC分类号： H01L27/14641 , H01L27/14603 , H04N5/357 , H04N5/3745 , H04N5/37457
摘要： An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.
摘要翻译：图像传感器包括在列方向上的第一像素区域中彼此相邻布置的第一像素和第一源极跟随器晶体管，以及第二像素和第二源极跟随器晶体管，其形成在与第二像素区域相邻的第二像素区域中第一像素区域在行方向上具有相同数量的第一像素，其中当第一像素共享第一源极跟随器晶体管并且第二像素共享第二源极跟随器晶体管时，当从相同行选择的像素被激活时，第一源极跟随器晶体管和第二源极跟随器晶体管被激活，使得它们的位置具有对角对称性。

7. 发明申请

US20150243693A1 CMOS Image Sensors Including Vertical Transistor and Methods of Fabricating the Same 有权
标题翻译：包括垂直晶体管的CMOS图像传感器及其制造方法
公开(公告)号：US20150243693A1
公开(公告)日：2015-08-27
申请号：US14340719
申请日：2014-07-25
申请人： Samsung Electronics Co., Ltd.
发明人： Young-Sun Oh , Kyung-Ho Lee , Jung-Chak Ahn , Hee-Geun Jeong
IPC分类号： H01L27/146 , H01L29/778
CPC分类号： H01L27/14614 , H01L27/14603 , H01L27/14616 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14689 , H01L31/02016
摘要： Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.
摘要翻译：提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器可以包括具有限定和分割第一有源区和第二有源区的第一器件隔离层的衬底，设置在衬底中的光电二极管，并且可以被配置为与第一器件隔离层垂直重叠，传输栅电极可以设置在第一有源区中并且可以被配置为垂直地重叠光电二极管，并且浮动扩散区可以在第一有源区中。传输栅电极可以埋在衬底中。

8. 发明申请

US20140260550A1 METHOD AND APPARATUS FOR CHECKING SEALING STATE OF HOUSING 审中-公开
标题翻译：检查住房密封状态的方法和装置
公开(公告)号：US20140260550A1
公开(公告)日：2014-09-18
申请号：US14207348
申请日：2014-03-12
申请人： Samsung Electronics Co. Ltd.
发明人： Kwang-Min Kil , Seong-Joon Kweon , Kyung-Ho Lee
IPC分类号： G01M3/02
CPC分类号： G01M3/3272
摘要： A method of checking a sealing state of a housing includes starting an operation of a pressure sensor configured to measure an internal pressure of the housing. The method includes checking whether or not the housing is pressed. The method further includes checking the sealing state of the housing through checking a measured value of the pressure sensor under a pressure of the housing. An apparatus for checking a sealing state of a housing includes the housing configured to keep an internal space thereof sealed off from an outside, a pressure sensor configured to measure a pressure of the internal space, and an interface unit configured to provide to the pressure sensor a control signal that controls an operation of the pressure sensor, and provide pressure information detected through the pressure sensor.
摘要翻译：一种检查壳体的密封状态的方法，包括开始构造成测量壳体的内部压力的压力传感器的操作。该方法包括检查外壳是否被按压。该方法还包括通过在壳体的压力下检查压力传感器的测量值来检查壳体的密封状态。用于检查壳体的密封状态的装置包括被构造成保持其内部空间与外部密封的壳体，被配置为测量内部空间的压力的压力传感器以及被配置成提供给压力传感器的接口单元控制信号，其控制压力传感器的操作，并提供通过压力传感器检测的压力信息。

9. 发明申请

US20140008705A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20140008705A1
公开(公告)日：2014-01-09
申请号：US13835669
申请日：2013-03-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Joon- Young Choi , Kyung-Ho Lee , Sang-Jun Choi , Tae-Hyoung Koo , Sam-Jong Choi
IPC分类号： H01L29/78 , H01L29/04
CPC分类号： H01L29/7827 , H01L27/14609 , H01L27/1463 , H01L27/1464 , H01L27/14645 , H01L27/14689 , H01L29/045
摘要： A semiconductor device includes field regions formed in a substrate, and n-type impurity regions disposed between the field regions. At least one of the side surfaces of the field regions has a {100}, {310}, or {311} plane.
摘要翻译：半导体器件包括形成在衬底中的场区域和设置在场区域之间的n型杂质区域。场区域的至少一个侧面具有{100}，{310}或{311}平面。

10. 发明授权

US10367024B2 Semiconductor image sensors having channel stop regions and methods of fabricating the same 有权
公开(公告)号：US10367024B2
公开(公告)日：2019-07-30
申请号：US15623635
申请日：2017-06-15
申请人： Samsung Electronics Co., Ltd.
发明人： Seungjoo Nah , Jung-Chak Ahn , Kyung-Ho Lee
IPC分类号： H01L27/146
摘要： A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

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