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1. 发明授权

US10552182B2 Multiple display device and method of operating the same 有权
公开(公告)号：US10552182B2
公开(公告)日：2020-02-04
申请号：US15458896
申请日：2017-03-14
申请人： Samsung Electronics Co., Ltd
发明人： Seongeun Kim , Jungsik Park , Woongeun Kwak , Sangyong Kim , Jaeyoung Shin , Seungwon Oh , Dohun Cha , Byounguk Yoon , Hyunju Hong
IPC分类号： G06F3/0481 , G06F9/451 , G06F3/0486 , G06F3/14 , G06F3/0484 , H04M1/00 , G06F3/0488 , H05K7/00 , G09G5/00
摘要： A multiple display device with a number of display areas, and a method of operating the device are provided. The method includes: executing a first application, and displaying the first user interface on the first image-display area; displaying text or icons related to the second application on the third image-display area; receiving a first user input for selecting an item or action via the first image-display area; receiving, after receiving the first user input, a second user input for selecting the text or the icon via the third image-display area; and displaying the second user interface on the second image-display area, in response to the second user input, and processing the item or action, using the second application. Various embodiments are provided.

2. 发明授权

US10317971B2 Electronic device and method for controlling functions thereof according to attachment of external device 有权
公开(公告)号：US10317971B2
公开(公告)日：2019-06-11
申请号：US15331144
申请日：2016-10-21
申请人： Samsung Electronics Co., Ltd.
发明人： Jaeyoung Shin , Woongeun Kwak , Sangyong Kim , Jinwoo Kim , Jungsik Park , Seungwon Oh , Byounguk Yoon , Sehwan Choi , Hyunju Hong
IPC分类号： G06F1/26 , G06F1/32 , H04W52/02 , G06F1/3296 , G06F1/16 , G06F3/01 , G06F3/0354 , H02J7/00 , H02J7/02 , H02J50/10
摘要： Provided are an electronic device and method for controlling functions of the electronic device according to attachment of an external device. The electronic device includes an interface part that electrically contacts an external device, and a processor that determines, when an external device is electrically connected, whether the external device has a second power source, and controls usage of a first power source of the electronic device according to a result of the determination.

3. 发明授权

US10892342B2 Semiconductor devices 有权
公开(公告)号：US10892342B2
公开(公告)日：2021-01-12
申请号：US16803130
申请日：2020-02-27
申请人： Samsung Electronics Co., Ltd.
发明人： Wonkeun Chung , Jae-Jung Kim , Jinkyu Jang , Sangyong Kim , Hoonjoo Na , Dongsoo Lee , Sangjin Hyun
IPC分类号： H01L29/423 , H01L29/786 , H01L29/775 , H01L29/06 , H01L29/66 , H01L29/51 , H01L29/49 , H01L27/11 , H01L21/28 , B82Y10/00
摘要： A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

4. 发明授权

US10475898B2 Semiconductor devices 有权
公开(公告)号：US10475898B2
公开(公告)日：2019-11-12
申请号：US15938716
申请日：2018-03-28
申请人： Samsung Electronics Co., Ltd.
发明人： Wonkeun Chung , Jae-Jung Kim , Jinkyu Jang , Sangyong Kim , Hoonjoo Na , Dongsoo Lee , Sangjin Hyun
IPC分类号： H01L21/28 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/51 , H01L27/11 , H01L29/06
摘要： A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

5. 发明申请

US20170262295A1 MULTIPLE DISPLAY DEVICE AND METHOD OF OPERATING THE SAME 审中-公开
公开(公告)号：US20170262295A1
公开(公告)日：2017-09-14
申请号：US15458896
申请日：2017-03-14
申请人： Samsung Electronics Co., Ltd
发明人： Seongeun Kim , Jungsik Park , Woongeun Kwak , Sangyong Kim , Jaeyoung Shin , Seungwon Oh , Dohun Cha , Byounguk Yoon , Hyunju Hong
IPC分类号： G06F9/44 , G06F3/14 , G06F3/0486
摘要： A multiple display device with a number of display areas, and a method of operating the device are provided. The method includes: executing a first application, and displaying the first user interface on the first image-display area; displaying text or icons related to the second application on the third image-display area; receiving a first user input for selecting an item or action via the first image-display area; receiving, after receiving the first user input, a second user input for selecting the text or the icon via the third image-display area; and displaying the second user interface on the second image-display area, in response to the second user input, and processing the item or action, using the second application. Various embodiments are provided.

6. 发明申请

US20200035801A1 SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：US20200035801A1
公开(公告)日：2020-01-30
申请号：US16592309
申请日：2019-10-03
申请人： Samsung Electronics Co., Ltd.
发明人： Wonkeun Chung , Jae-Jung Kim , Jinkyu Jang , Sangyong Kim , Hoonjoo Na , Dongsoo Lee , Sangjin Hyun
IPC分类号： H01L29/423 , H01L29/66 , H01L29/06 , B82Y10/00 , H01L29/775 , H01L27/11 , H01L29/786 , H01L29/49 , H01L29/51 , H01L21/28
摘要： A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

7. 发明授权

US09691967B2 Magnetic memory devices having perpendicular magnetic tunnel structures therein 有权
公开(公告)号：US09691967B2
公开(公告)日：2017-06-27
申请号：US15185693
申请日：2016-06-17
申请人： Samsung Electronics Co., Ltd.
发明人： Sangyong Kim , Whankyun Kim , Sechung Oh
IPC分类号： H01L43/02 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08
摘要： Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking layer is formed as an amorphous metal compound. In some of the embodiments, the blocking layer is a thermally treated layer and an amorphous state of the blocking layer is maintained during and post thermal treatment.

8. 发明授权

US09184376B2 Memory devices and methods of manufacturing the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US09184376B2
公开(公告)日：2015-11-10
申请号：US14315610
申请日：2014-06-26
申请人： Samsung Electronics Co., Ltd.
发明人： Sang Hwan Park , Soonoh Park , Sangyong Kim , Joonmyoung Lee
IPC分类号： H01L43/10 , H01L43/08
CPC分类号： H01L43/10 , G11C11/161 , H01L43/08
摘要： A magnetic memory device may include a substrate and a magnetic tunnel junction memory element on the substrate. The magnetic tunnel junction memory element may include a reference magnetic layer, a tunnel barrier layer, and a free magnetic layer. The reference magnetic layer may include a first pinned layer, an exchange coupling layer, and a second pinned layer. The exchange coupling layer may be between the first and second pinned layers, and the second pinned layer may include a ferromagnetic layer and a non-magnetic layer. The second pinned layer may be between the first pinned layer and the tunnel barrier layer, and the tunnel barrier layer may be between the reference magnetic layer and the free magnetic layer.
摘要翻译：磁存储器件可以在衬底上包括衬底和磁性隧道结存储元件。磁性隧道结存储元件可以包括参考磁性层，隧道势垒层和自由磁性层。参考磁性层可以包括第一固定层，交换耦合层和第二固定层。交换耦合层可以在第一和第二被钉扎层之间，并且第二被钉扎层可以包括铁磁层和非磁性层。第二被钉扎层可以在第一被钉扎层和隧道势垒层之间，并且隧道势垒层可以在参考磁性层和自由磁性层之间。

9. 发明申请

US20220238653A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220238653A1
公开(公告)日：2022-07-28
申请号：US17513262
申请日：2021-10-28
申请人： Samsung Electronics Co., Ltd.
发明人： Chanhyeong Lee , Sangyong Kim , Jaejung Kim , Byounghoon Lee
IPC分类号： H01L29/10 , H01L29/08
摘要： A semiconductor device includes a first active region on a substrate, channel layers disposed on the first active region to be spaced apart from each other in a vertical direction, a first gate structure disposed on the first active region and surrounding each channel layer, and a first source/drain region on the first active region on at least one side of the first gate structure. The channel layers include first to third channel layers. The first gate structure includes a first gate electrode and a first gate dielectric layer. The first gate dielectric layer includes first to third portions surrounding the first to third channel layers, respectively. The second portion has a thickness greater than a thickness of the first portion, and the third portion has a thickness greater than the thickness of the second portion.

10. 发明申请

US20190081148A1 SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：US20190081148A1
公开(公告)日：2019-03-14
申请号：US15938716
申请日：2018-03-28
申请人： Samsung Electronics Co., Ltd.
发明人： Wonkeun Chung , Jae-Jung Kim , Jinkyu Jang , Sangyong Kim , Hoonjoo Na , Dongsoo Lee , Sangjin Hyun
IPC分类号： H01L29/423 , H01L29/49 , H01L29/786 , H01L29/51 , H01L21/28
摘要： A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

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