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    • 4. 发明授权
    • Semiconductor device
    • 半导体器件
    • US09331199B2
    • 2016-05-03
    • US14667810
    • 2015-03-25
    • Samsung Electronics Co., Ltd.
    • Keun-Hwi ChoSung-Il ParkByoung-Hak HongToshinori FukaiMun-Hyeon KimWoong-Gi KimSue-Hye ParkDong-Won KimDae-Won Ha
    • H01L29/76H01L29/94H01L29/78H01L27/092H01L29/423H01L27/088H01L29/06
    • H01L29/7845H01L21/28123H01L21/82385H01L21/823871H01L27/0207H01L27/088H01L27/092H01L29/0649H01L29/42356H01L29/66545H01L29/785
    • Provided is a semiconductor device to which a pattern structure for performance improvement is applied. The semiconductor device includes first and second active regions spaced apart from each other in a first direction with an isolation layer interposed therebetween, a first normal gate formed on the first active region to extend in a second direction crossing the first direction, a first dummy gate having a portion overlapping with one end of the isolation layer and the other portion overlapping with the first active region and spaced apart from the first normal gate in the first direction, a second dummy gate having a portion overlapping with the other end of the isolation layer and the other portion overlapping with the second active region, a first normal source/drain contact formed on a source/drain region between the first normal gate and the first dummy gate, and a dummy contact formed on the isolation layer so as not to overlap with the first and second dummy gates and having a different size from the first normal source/drain contact.
    • 提供了一种应用了用于性能改进的图案结构的半导体器件。 所述半导体器件包括在第一方向上彼此间隔开的第一和第二有源区,隔着隔离层彼此隔开的第一正常栅极,形成在第一有源区上以沿与第一方向交叉的第二方向延伸的第一正常栅极,第一伪栅极 具有与所述隔离层的一端重叠的部分,并且所述另一部分与所述第一有源区域重叠并且在所述第一方向上与所述第一正常栅极间隔开,第二伪栅极具有与所述隔离层的另一端重叠的部分 并且另一部分与第二有源区重叠,形成在第一正常栅极和第一伪栅极之间的源极/漏极区域上的第一正常源极/漏极接触器和形成在隔离层上以使得不重叠的虚拟接触 与第一和第二伪栅极并且具有与第一正常源极/漏极接触件不同的尺寸。
    • 9. 发明授权
    • Semiconductor device fabrication methods
    • 半导体器件制造方法
    • US09012281B2
    • 2015-04-21
    • US13829703
    • 2013-03-14
    • Samsung Electronics Co., Ltd.
    • Sung-Dae SukHee-Soo KangSung-Il ParkSang-Hoon Lee
    • H01L21/8238H01L27/092
    • H01L27/0922H01L21/823871
    • A semiconductor device includes a substrate having a first region and a second region, first and second gate electrodes disposed on the first and second regions, respectively, and first and second source/drain regions disposed on at least one side of the first and second gate electrodes, respectively. The device further includes first and second silicide regions in the first and second source/drain regions, respectively. A contact area between the first silicide region and the first source/drain region is differs in size from a contact area between the second silicide region and the second source/drain region. Methods of fabricating such devices are also provided.
    • 半导体器件包括具有第一区域和第二区域的衬底,分别设置在第一和第二区域上的第一和第二栅极电极以及设置在第一和第二栅极的至少一侧上的第一和第二源极/漏极区域 电极。 该器件还分别包括第一和第二源极/漏极区域中的第一和第二硅化物区域。 第一硅化物区域和第一源极/漏极区域之间的接触区域的大小与第二硅化物区域和第二源极/漏极区域之间的接触面积不同。 还提供了制造这种装置的方法。