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1. 发明授权

US11516056B2 Apparatus and method for allocating guard band in wireless communication system 有权
公开(公告)号：US11516056B2
公开(公告)日：2022-11-29
申请号：US17024041
申请日：2020-09-17
申请人： Samsung Electronics Co., Ltd.
发明人： Eungkuk Nam , Joosung Park , Taehyun Kim , Kitaek Bae
IPC分类号： H04L27/26 , H04W72/04 , H04W80/08 , H04L5/00 , H04W28/02 , H04W52/36 , H04L25/02
摘要： An operating method and an apparatus are provided in which state information is received from at least one of a higher layer and a plurality of terminals. A respective allocation resource is determined for each of the plurality of terminals, based on the state information. A respective guard band is determined to be allocated for each of the plurality of terminals, based on the respective allocation resource. Respective resource blocks (RBs) are determined for each of the plurality of terminals, based on the respective guard band. Information about the determined respective RBs is transmitted to respective terminals of the plurality of terminals.

2. 发明授权

US09076511B2 Nonvolatile memory device and memory system including the same 有权
标题翻译：非易失性存储器件和包括其的存储器系统
公开(公告)号：US09076511B2
公开(公告)日：2015-07-07
申请号：US14087444
申请日：2013-11-22
申请人： Samsung Electronics Co., Ltd.
发明人： Taehyun Kim , Youngcho Kim , Youngsun Min , Sungwhan Seo
IPC分类号： G11C5/14 , G11C16/06
CPC分类号： G11C5/147 , G11C5/145 , G11C16/06 , G11C16/30
摘要： A nonvolatile memory device includes a memory cell array; and a high voltage generator arranged to generate a high voltage to be supplied to the memory cell array. The high voltage generator includes a pump unit block having a plurality of pump units supplied with an external voltage and at least one of the pumps is engaged in pumping the external voltage to a higher, output, voltage, at a steady clock rate. The number of pumps engaged in pumping is increased until a predetermined period has elapsed. The rate at which the number of pumps is increased depends upon the value of the external voltage.
摘要翻译：非易失性存储器件包括存储单元阵列; 以及高电压发生器，其布置成产生要提供给存储单元阵列的高电压。高压发生器包括具有供给外部电压的多个泵单元的泵单元块，并且至少一个泵接合以以稳定的时钟速率将外部电压泵送到更高的输出电压。泵送的泵的数量增加直到经过了预定时间。泵数量增加的速率取决于外部电压的值。

3. 发明申请

US20140233337A1 NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME 有权
标题翻译：非易失性存储器件和包括其的存储器系统
公开(公告)号：US20140233337A1
公开(公告)日：2014-08-21
申请号：US14087444
申请日：2013-11-22
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Taehyun Kim , Youngcho Kim , Youngsun Min , Sungwhan Seo
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C5/145 , G11C16/06 , G11C16/30
摘要： A nonvolatile memory device includes a memory cell array; and a high voltage generator arranged to generate a high voltage to be supplied to the memory cell array. The high voltage generator includes a pump unit block having a plurality of pump units supplied with an external voltage and at least one of the pumps is engaged in pumping the external voltage to a higher, output, voltage, at a steady clock rate. The number of pumps engaged in pumping is increased until a predetermined period has elapsed. The rate at which the number of pumps is increased depends upon the value of the external voltage.
摘要翻译：非易失性存储器件包括存储单元阵列; 以及高电压发生器，其布置成产生要提供给存储单元阵列的高电压。高压发生器包括具有供给外部电压的多个泵单元的泵单元块，并且至少一个泵接合以以稳定的时钟速率将外部电压泵送到更高的输出电压。泵送的泵的数量增加直到经过了预定时间。泵数量增加的速率取决于外部电压的值。

4. 发明授权

US10891998B2 Memory device operating based on a write current for a given operation condition and a method of driving the write current 有权
公开(公告)号：US10891998B2
公开(公告)日：2021-01-12
申请号：US16401236
申请日：2019-05-02
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Chankyung Kim , Taehyun Kim , Seongui Seo , Sangjung Jeon
IPC分类号： G11C13/00 , G11C11/16
摘要： A memory device including: a memory cell array including a memory cell, the memory cell configured to store first data based on a first write current; a write driver configured to output the first write current based on a control value; and a current controller including a replica memory cell, the current controller configured to generate the control value based on a state of second data which is stored in the replica memory cell, wherein an intensity of the first write current is adjusted based on the control value.

5. 发明申请

US20220115060A1 MEMORY DEVICE USING A PLURALITY OF SUPPLY VOLTAGES AND OPERATING METHOD THEREOF 有权
公开(公告)号：US20220115060A1
公开(公告)日：2022-04-14
申请号：US17478629
申请日：2021-09-17
申请人： Samsung Electronics Co., Ltd.
发明人： Taemin Choi , Taehyun Kim , Seongook Jung
IPC分类号： G11C11/419 , G11C11/418
摘要： A memory device accessed by circuits operating based on a first supply voltage. The memory device includes a cell array electrically connected to a plurality of word lines and a plurality of bit lines; a row driver configured to select one word line of the plurality of word lines based on a row address; a precharge circuit configured to precharge the plurality of bit lines based on the first supply voltage; a column driver configured to select at least one bit line of the plurality of bit lines based on a column address; and a read circuit configured to read data stored in the cell array through the at least one bit line. The cell array, the row driver, the column driver, and the read circuit operate based on a second supply voltage, which is higher than the first supply voltage.

6. 发明申请

US20220068681A1 WAFER INSPECTION APPARATUS AND SYSTEM INCLUDING THE SAME 有权
公开(公告)号：US20220068681A1
公开(公告)日：2022-03-03
申请号：US17229197
申请日：2021-04-13
申请人： Samsung Electronics Co., Ltd.
发明人： Kyunghun Han , Ingi Kim , Sangwoo Bae , Jungchul Lee , Minhwan Seo , Myeongock Ko , Youngjoo Lee , Taehyun Kim , Seulgi Lee
IPC分类号： H01L21/67 , G02B7/02 , G06T5/20 , G06T7/00 , G01N21/65 , G01N21/41 , G01N21/95
摘要： A wafer inspection apparatus includes: an objective lens on an optical path of first and second input beams; and an image sensor configured to generate an image of the wafer based on scattered light according to a nonlinear optical phenomenon based on the first and second input beams, wherein the first input beam passing through the objective lens is obliquely incident on the wafer at a first incident angle with respect to a vertical line that is normal to an upper surface of the wafer, the second input beam passing through the objective lens is incident on the wafer at a second incident angle oblique to the vertical line that is normal to the upper surface of the wafer, and the first and second incident angles are different from each other.

7. 发明申请

US20200065029A1 STORAGE DEVICE AND OPERATING METHOD THEREOF 审中-公开
公开(公告)号：US20200065029A1
公开(公告)日：2020-02-27
申请号：US16394506
申请日：2019-04-25
申请人： Samsung Electronics Co., Ltd.
发明人： Taehyun Kim , Chankyung Kim , Sang-won Shim , Suk-Soo Pyo
IPC分类号： G06F3/06 , G06F11/10 , G11C29/52
摘要： An operating method of a storage device which includes a first nonvolatile memory device and a second nonvolatile memory device includes detecting sudden power-off, suspending an operation being performed in the first nonvolatile memory device, in response to the detected sudden power-off, writing suspension information about the suspended operation into the second nonvolatile memory device, and performing a block management operation on the first nonvolatile memory device based on the suspension information written into the second nonvolatile memory device, in power-up after the sudden power-off.

8. 发明授权

US09349457B2 High voltage switch, nonvolatile memory device comprising same, and related method of operation 有权
标题翻译：高压开关，包含该高压开关的非易失性存储器件及其相关操作方法
公开(公告)号：US09349457B2
公开(公告)日：2016-05-24
申请号：US14455344
申请日：2014-08-08
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Taehyun Kim , Youngsun Min
IPC分类号： G11C16/08 , H03K17/16 , G11C16/12 , G11C16/34
CPC分类号： G11C16/08 , G11C16/12 , G11C16/3418 , H03K17/165
摘要： A high voltage switch operates in response to a first drive voltage and a second drive voltage higher than the first drive voltage. The high voltage switch includes a PMOS transistor transmitting the second drive voltage to an output terminal according to a voltage applied to its gate, a first depletion mode transistor providing the second drive voltage to the PMOS transistor according to an output signal fed back from the output terminal, a second depletion mode transistor receiving the second drive voltage through one end and providing a switching voltage to another end according to a switching control signal, and a level shifter providing the switching voltage to a gate of the PMOS transistor according to an enable signal and a reverse enable signal.
摘要翻译：高电压开关响应于高于第一驱动电压的第一驱动电压和第二驱动电压而工作。高压开关包括PMOS晶体管，其根据施加到其栅极的电压将第二驱动电压传输到输出端，第一耗尽模式晶体管，根据从输出端反馈的输出信号，向PMOS晶体管提供第二驱动电压端子，第二耗尽型晶体管，通过一端接收第二驱动电压，并根据开关控制信号向另一端提供开关电压;以及电平移位器，根据使能信号向PMOS晶体管的栅极提供开关电压和反向使能信号。

9. 发明授权

US09147489B2 High voltage switch and a nonvolatile memory device including the same 有权
标题翻译：高压开关和包括其的非易失性存储器件
公开(公告)号：US09147489B2
公开(公告)日：2015-09-29
申请号：US14077769
申请日：2013-11-12
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Taehyun Kim , Youngsun Min , Bilal Ahmad Janjua , Jeongdon Ihm
IPC分类号： G11C16/06 , G11C16/30 , G11C16/04 , G11C16/12
CPC分类号： G11C16/30 , G11C16/0483 , G11C16/12
摘要： A high voltage switch of a nonvolatile memory device includes a depletion type NMOS transistor configured to switch a second driving voltage in response to an output signal of the high voltage switch; at least one inverter configured to convert a voltage of an input signal of the high voltage switch into a first driving voltage or a ground voltage, wherein the first and second driving voltages are received from an external device; and a PMOS transistor configured to transfer the second driving voltage provided to a first terminal of the PMOS transistor from the depletion type NMOS transistor to a second terminal of the PMOS transistor as the output signal in response to an output of the at least one inverter, wherein the output of the at least one inverter is transferred to a gate terminal of the PMOS transistor.
摘要翻译：非易失性存储器件的高电压开关包括耗尽型NMOS晶体管，其配置为响应于高电压开关的输出信号而切换第二驱动电压; 至少一个反相器，被配置为将高压开关的输入信号的电压转换为第一驱动电压或接地电压，其中从外部装置接收第一和第二驱动电压; 以及PMOS晶体管，被配置为响应于所述至少一个反相器的输出，将提供给所述PMOS晶体管的第一端子的所述第二驱动电压从所述耗尽型NMOS晶体管传送到所述PMOS晶体管的第二端子作为所述输出信号，其中所述至少一个反相器的输出被传送到所述PMOS晶体管的栅极端子。

10. 发明申请

US20220111331A1 DESICCANT REPLACING APPARATUS AND AIR DRY SYSTEM INCLUDING THE SAME 有权
公开(公告)号：US20220111331A1
公开(公告)日：2022-04-14
申请号：US17306352
申请日：2021-05-03
申请人： Samsung Electronics Co., Ltd.
发明人： Sungmin Jang , Tae-Hyun Ko , Dong-Hee Kim , Taehyun Kim , Jiwoon Lee , Haeyong Choi
IPC分类号： B01D53/26 , B01D46/00 , B01D53/047
摘要： A desiccant replacing apparatus may include a supply-discharge member, a supply connection line connected to the supply-discharge member, an air conveyor coupled to the supply connection line, a discharge connection line connected to the supply-discharge member, and an air amplifier coupled to the discharge connection line. The supply-discharge member may include a housing providing an internal space, an injection line providing an injection path and penetrating the housing, an exhaust line providing an exhaust path connected to the internal space, and a filter in the internal space or the exhaust path. The supply connection line may be connected to the injection line, and the discharge connection line may be connected to the exhaust line.

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