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1. 发明申请

US20140237165A1 MEMORY CONTROLLER, METHOD OF OPERATING THE SAME AND MEMORY SYSTEM INCLUDING THE SAME 有权
标题翻译：存储器控制器，其操作方法和包括其的存储器系统
公开(公告)号：US20140237165A1
公开(公告)日：2014-08-21
申请号：US14081371
申请日：2013-11-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： YOUNGIL SEO , Jungho Yun , Wonchul Lee , Dawoon Jung
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/1032 , G06F2212/7205
摘要： A memory controller controlling a nonvolatile memory device having a plurality of memory blocks as a data storage space includes an error detection and correction circuit and a reclaim control unit. The error detection and correction circuit receives data from a memory block and calculates a comparison result by comparing a bit error rate of the received data and a predetermined value. The reclaim control unit determines whether or not to perform a read reclaim operation depending on the comparison result and a read voltage used to read the data. The read reclaim operation copies the data to a memory block different from a memory block having stored the data.
摘要翻译：控制具有多个存储块作为数据存储空间的非易失性存储器件的存储器控制器包括错误检测和校正电路以及回收控制单元。误差检测和校正电路从存储器块接收数据，并通过比较接收到的数据的误码率和预定值来计算比较结果。回收控制单元根据比较结果和用于读取数据的读取电压来确定是否执行读取回收操作。读回收操作将数据复制到与存储数据的存储块不同的存储器块。

2. 发明授权

US10347641B2 Semiconductor devices 有权
公开(公告)号：US10347641B2
公开(公告)日：2019-07-09
申请号：US15814824
申请日：2017-11-16
申请人： Samsung Electronics Co., Ltd.
发明人： Jihoon Kim , Wonchul Lee
IPC分类号： H01L27/108 , H01L49/02
摘要： A semiconductor device includes a substrate including a cell region and peripheral region and bottom electrodes on the substrate. The bottom electrodes are arranged in a first row and a second row each extending in a first direction. The first row and the second row are adjacent to each other in a second direction perpendicular to the first direction. The bottom electrodes in the first row include an outermost bottom electrode and a next outermost bottom electrode that are separated by a first distance in the first direction. The bottom electrodes in the second row include an outermost bottom electrode and a next outermost bottom electrode that are separated by a second distance in the first direction. The outermost bottom electrode in the first row is on the peripheral region of the substrate. The outermost bottom electrode in the second row is on the cell region of the substrate.

3. 发明申请

US20230133763A1 SEMICONDUCTOR DEVICES 有权
公开(公告)号：US20230133763A1
公开(公告)日：2023-05-04
申请号：US17868126
申请日：2022-07-19
申请人： Samsung Electronics Co., Ltd.
发明人： Sunyoung Lee , Sohyeon Bae , Wonchul Lee
IPC分类号： H01L27/108
摘要： A semiconductor device includes a substrate having a cell array region, a peripheral circuit region, and a connection region, a device separation region including a first device separation layer defining a cell active region on the cell array region, a second device separation layer defining a peripheral active region on the peripheral circuit region, and a third device separation layer defining an active dam on the connection region, a gate structure including a gate electrode crossing the cell active region on the cell array region, extending into the third device separation layer on the connection region, and having an end surface in the third device separation layer, and a gate contact plug electrically connected to the gate electrode on the connection region, wherein the third device separation layer includes a first insulating liner, a second insulating liner on the first insulating liner, and an embedded insulating layer.

4. 发明授权

US10720435B2 Semiconductor devices including support patterns 有权
公开(公告)号：US10720435B2
公开(公告)日：2020-07-21
申请号：US16440399
申请日：2019-06-13
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jae-Hoon Song , Kiheum Nam , Wonchul Lee
IPC分类号： H01L27/108 , H01L29/41 , H01L21/768 , H01L23/528 , H01L49/02 , H01L27/02
摘要： A semiconductor device includes a plurality of pillar structures on a semiconductor substrate, and a support pattern in contact with at least a part of each of the pillar structures, the support pattern connecting the pillar structures with one another, wherein the support pattern includes support holes exposing side surfaces of the pillar structures, the support holes including at least a first support hole and a second support hole that are spaced apart from each other, the first and second support holes having different shapes from each other.

5. 发明申请

US20180342519A1 SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：US20180342519A1
公开(公告)日：2018-11-29
申请号：US15814824
申请日：2017-11-16
申请人： Samsung Electronics Co., Ltd.
发明人： Jihoon Kim , Wonchul Lee
IPC分类号： H01L27/108 , H01L49/02
CPC分类号： H01L27/10852 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L27/10894 , H01L28/75 , H01L28/87 , H01L28/91
摘要： A semiconductor device includes a substrate including a cell region and peripheral region and bottom electrodes on the substrate. The bottom electrodes are arranged in a first row and a second row each extending in a first direction. The first row and the second row are adjacent to each other in a second direction perpendicular to the first direction. The bottom electrodes in the first row include an outermost bottom electrode and a next outermost bottom electrode that are separated by a first distance in the first direction. The bottom electrodes in the second row include an outermost bottom electrode and a next outermost bottom electrode that are separated by a second distance in the first direction. The outermost bottom electrode in the first row is on the peripheral region of the substrate. The outermost bottom electrode in the second row is on the cell region of the substrate.

6. 发明授权

US09213598B2 Nonvolatile memory device and method of operating the same 有权
标题翻译：非易失存储器件及其操作方法
公开(公告)号：US09213598B2
公开(公告)日：2015-12-15
申请号：US14175342
申请日：2014-02-07
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Youngil Seo , Jungho Yun , Wonchul Lee , Dawoon Jung
IPC分类号： G11C29/00 , G06F11/10
CPC分类号： G06F11/1048
摘要： A nonvolatile memory device includes a nonvolatile memory, a buffer memory configured to store a plurality of read data transmitted from the nonvolatile memory, an error detection and correction circuit configured to detect an error in partial data of each of the plurality of read data and judging whether the partial data is correctable or not on the basis of the detected error, and a controller configured to analyze the uncorrectable partial data with respect to the plurality of read data to determine a representative value, and to transmit the representative value to the error detection and correction circuit. The plurality of read data is read through a read operation with respect to a same page.
摘要翻译：非易失性存储器件包括非易失性存储器，缓冲存储器，被配置为存储从非易失性存储器发送的多个读取数据;错误检测和校正电路，被配置为检测多个读取数据中的每一个的部分数据中的错误，并且判断基于检测到的错误是否可校正部分数据;以及控制器，被配置为分析关于多个读取数据的不可校正部分数据以确定代表值，并将代表值发送到错误检测和校正电路。通过对同一页面的读取操作来读取多个读取数据。

7. 发明授权

US11329050B2 Semiconductor memory devices having contact plugs 有权
公开(公告)号：US11329050B2
公开(公告)日：2022-05-10
申请号：US16993394
申请日：2020-08-14
申请人： Samsung Electronics Co., Ltd.
发明人： Hyejin Seong , Dongsoo Woo , Wonchul Lee
IPC分类号： H01L27/108
摘要： A semiconductor memory device includes a substrate having a memory cell region where a plurality of active regions are defined; a word line having a stack structure of a lower word line layer and an upper word line layer and extending over the plurality of active regions in a first horizontal direction, and a buried insulation layer on the word line; a bit line structure arranged on the plurality of active regions, extending in a second horizontal direction perpendicular to the first horizontal direction, and having a bit line; and a word line contact plug electrically connected to the lower word line layer by penetrating the buried insulation layer and the upper word line layer and having a plug extension in an upper portion of the word line contact plug, the plug extension having a greater horizontal width than a lower portion of the word line contact plug.

8. 发明授权

US11195837B2 Semiconductor devices including support patterns 有权
公开(公告)号：US11195837B2
公开(公告)日：2021-12-07
申请号：US16800105
申请日：2020-02-25
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jae-Hoon Song , Kiheum Nam , Wonchul Lee
IPC分类号： H01L27/108 , H01L49/02 , H01L23/528 , H01L21/768 , H01L29/41 , H01L27/02
摘要： A semiconductor device comprises a plurality of pillars on a semiconductor substrate, and a support pattern in contact with at least one side surface of each of the pillars. The support pattern connects the pillars with one another. The support pattern includes a plurality of support holes that expose side surfaces of the pillars. The support holes includes a first support hole and a second support hole that are spaced apart from each other. The pillars have circular cross-sections. A ribbon-like hexagon is obtained in a plan view when connecting an inner sidewall of the first support hole with central points of the cross-sections of the pillars exposed through the first support hole.

9. 发明申请

US20220231027A1 SEMICONDUCTOR MEMORY DEVICES HAVING CONTACT PLUGS 有权
公开(公告)号：US20220231027A1
公开(公告)日：2022-07-21
申请号：US17716194
申请日：2022-04-08
申请人： Samsung Electronics Co., Ltd.
发明人： Hyejin Seong , Dongsoo Woo , Wonchul Lee
IPC分类号： H01L27/108
摘要： A semiconductor memory device includes a substrate having a memory cell region where a plurality of active regions are defined; a word line having a stack structure of a lower word line layer and an upper word line layer and extending over the plurality of active regions in a first horizontal direction, and a buried insulation layer on the word line; a bit line structure arranged on the plurality of active regions, extending in a second horizontal direction perpendicular to the first horizontal direction, and having a bit line; and a word line contact plug electrically connected to the lower word line layer by penetrating the buried insulation layer and the upper word line layer and having a plug extension in an upper portion of the word line contact plug, the plug extension having a greater horizontal width than a lower portion of the word line contact plug.

10. 发明申请

US20210193664A1 SEMICONDUCTOR MEMORY DEVICES HAVING CONTACT PLUGS 有权
公开(公告)号：US20210193664A1
公开(公告)日：2021-06-24
申请号：US16993394
申请日：2020-08-14
申请人： Samsung Electronics Co., Ltd.
发明人： Hyejin Seong , Dongsoo Woo , Wonchul Lee
IPC分类号： H01L27/108
摘要： A semiconductor memory device includes a substrate having a memory cell region where a plurality of active regions are defined; a word line having a stack structure of a lower word line layer and an upper word line layer and extending over the plurality of active regions in a first horizontal direction, and a buried insulation layer on the word line; a bit line structure arranged on the plurality of active regions, extending in a second horizontal direction perpendicular to the first horizontal direction, and having a bit line; and a word line contact plug electrically connected to the lower word line layer by penetrating the buried insulation layer and the upper word line layer and having a plug extension in an upper portion of the word line contact plug, the plug extension having a greater horizontal width than a lower portion of the word line contact plug.

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