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1. 发明授权

US10712662B2 Methods of forming patterns using compositions for an underlayer of photoresist 有权
公开(公告)号：US10712662B2
公开(公告)日：2020-07-14
申请号：US15405612
申请日：2017-01-13
申请人： Samsung Electronics Co., Ltd. , Dongjin Semichem Co., Ltd.
发明人： Jin-A Ryu , Jung-Youl Lee , Kyung-Lyul Moon , Yool Kang , Hyun-Jin Kim , Yu-Jin Jeoung , Man-Ho Han
IPC分类号： C08G18/02 , G03F7/11 , H01L21/3213 , H01L21/311 , H01L21/027 , H01L49/02 , C09D175/00 , G03F7/004 , G03F7/09 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , H01L21/306 , H01L21/308
摘要： A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.

2. 发明申请

US20150286139A1 Compound and Composition for Forming Lower Film of Resist Pattern, and Method for Forming Lower Film Using Same 有权
标题翻译：用于形成抗蚀剂图案的下膜的化合物和组合物，以及使用其形成下膜的方法
公开(公告)号：US20150286139A1
公开(公告)日：2015-10-08
申请号：US14427010
申请日：2013-09-12
申请人： DONGJIN SEMICHEM CO., LTD.
发明人： Su-Young Han , Jung-Youl Lee , Jae-Woo Lee , Jae-Hyun Kim
IPC分类号： G03F7/09 , G03F7/16 , G03F7/40
CPC分类号： G03F7/091 , G03F7/0002 , G03F7/168 , G03F7/40 , H01L21/0271
摘要： Disclosed are a compound and composition for forming a lower film, which are used in a process for forming a resist pattern by means of the directed self-assembly of a block copolymer (BCP). Also disclosed is a method for forming a lower film using same. The compound for forming a lower film of a resist pattern according to the present invention has the structure of formula 1 of claim 1.
摘要翻译：公开了用于形成下膜的化合物和组合物，其用于通过嵌段共聚物（BCP）的定向自组装形成抗蚀剂图案的方法。还公开了使用其形成下膜的方法。用于形成根据本发明的抗蚀剂图案的下膜的化合物具有权利要求1的式1的结构。

3. 发明申请

US20140242520A1 I-LINE PHOTORESIST COMPOSITION AND METHOD FOR FORMING FINE PATTERN USING SAME 审中-公开
标题翻译： I-LINE光电组合物和使用其形成精细图案的方法
公开(公告)号：US20140242520A1
公开(公告)日：2014-08-28
申请号：US14346356
申请日：2012-09-21
申请人： DONGJIN SEMICHEM CO., LTD.
发明人： Jung-Youl Lee , Eu-Jean Jang , Jae-Woo Lee , Jae-Hyun Kim
IPC分类号： G03F7/038
CPC分类号： G03F7/0388 , G03F7/022 , G03F7/0226 , G03F7/0233 , G03F7/405
摘要： An I-line photoresist composition, having excellent thermal stability at high temperature of 200-250° C., by which fine photoresist patterns form using an acid diffusion layer and a method for forming a fine pattern using the same, comprising: a polymer containing 1-99 mol % of repeating unit selected from a group consisting of 1-99 mol % of repeating unit represented by Formula 1, repeating unit represented by Formula 2, repeating unit represented by Formula 3 and mixture thereof; a photo active compound containing at least two diazonaphtoquinone (DNQ) groups; and an organic solvent. Formulas 1-3 are located in the specification. R* and R** are independently a hydrogen atom or a methyl group. R1 is a hydrogen atom or linear, branch or cyclic hydrocarbonyl group of 3-15 carbon atoms, containing or not containing 1-4 oxygen atoms. R2 is linear, branch or cyclic hydrocarbonyl group of 1-30 carbon atoms, containing or not containing 1-4 oxygen atoms.
摘要翻译：一种线型光致抗蚀剂组合物，在200-250℃的高温下具有优异的热稳定性，通过使用酸扩散层形成精细的光致抗蚀剂图案，以及使用其形成精细图案的方法，包括：含有 1-99摩尔％的选自1-99摩尔％的由式1表示的重复单元的重复单元，由式2表示的重复单元，由式3表示的重复单元及其混合物; 含有至少两个重氮萘醌（DNQ）基团的光活性化合物; 和有机溶剂。公式1-3位于说明书中。 R *和R **独立地为氢原子或甲基。 R1是含有或不含有1-4个氧原子的3-15个碳原子的氢原子或直链，支链或环状烃基。 R2是含有或不含有1-4个氧原子的1-30个碳原子的直链，支链或环状烃基。

4. 发明授权

US09651867B2 Compound and composition for forming lower film of resist pattern, and method for forming lower film using same 有权
公开(公告)号：US09651867B2
公开(公告)日：2017-05-16
申请号：US14427010
申请日：2013-09-12
申请人： DONGJIN SEMICHEM CO., LTD.
发明人： Su-Young Han , Jung-Youl Lee , Jae-Woo Lee , Jae-Hyun Kim
IPC分类号： G03F7/11 , H01L21/027 , G03F7/09 , G03F7/00 , G03F7/16 , G03F7/40
CPC分类号： G03F7/091 , G03F7/0002 , G03F7/168 , G03F7/40 , H01L21/0271
摘要： Disclosed are a compound and composition for forming a lower film, which are used in a process for forming a resist pattern by means of the directed self-assembly of a block copolymer (BCP). Also disclosed is a method for forming a lower film using same. The compound for forming a lower film of a resist pattern according to the present invention has the structure of formula 1 of claim 1.

5. 发明申请

US20140287587A1 Method for Forming Fine Patterns of Semiconductor Device Using Directed Self-Assembly Process 审中-公开
标题翻译：使用定向自组装工艺形成半导体器件精细图案的方法
公开(公告)号：US20140287587A1
公开(公告)日：2014-09-25
申请号：US14346080
申请日：2012-09-27
申请人： DONGJIN SEMICHEM CO., LTD
发明人： Jung-Youl Lee , Eu-Jean Jang , Jae-Woo Lee , Jae-Hyun Kim
IPC分类号： H01L21/308
CPC分类号： H01L21/3086 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , H01L21/0271 , H01L21/0337
摘要： Provided herein is a method for forming fine patterns of semiconductor devices capable of forming patterns with 20 nm-level line width without bulk-exposure and hardening of guide patterns. Method steps include (a) forming a photoresist layer over a wafer on which an organic anti-reflection coating layer is formed; (b) exposing and developing the photoresist layer to form guide patterns; (c) forming a neutral layer over the wafer; (d) developing the guide patterns to remove them and form neutral layer patterns having an opening part; (e) coating block copolymer of directed self assembly material on the substrate and heating the substrate over a glass transition temperature (Tg) to form directed self-assembly patterns; and (f) selectively etching a part having relatively small etching resistivity (or high etching rate) among the directed self-assembly patterns by using O2 plasma to form fine patterns.
摘要翻译：本文提供了一种用于形成能够形成具有20nm级线宽的图案的半导体器件的精细图案的方法，而不引导图案的体积曝光和硬化。方法步骤包括（a）在其上形成有机抗反射涂层的晶片上形成光致抗蚀剂层; （b）曝光和显影光致抗蚀剂层以形成引导图案; （c）在所述晶片上形成中性层; （d）显影引导图案以去除它们并形成具有开口部分的中性层图案; （e）将定向自组装材料的嵌段共聚物涂覆在基材上并在玻璃化转变温度（Tg）下加热基材以形成定向的自组装图案; 和（f）通过使用O 2等离子体来选择性地蚀刻定向自组装图案中具有相对小的蚀刻电阻率（或高蚀刻速率）的部分以形成精细图案。

6. 发明授权

US09416296B2 Resist underlayer composition and method for forming pattern using same 有权
标题翻译：抗蚀剂底层组合物和使用其形成图案的方法
公开(公告)号：US09416296B2
公开(公告)日：2016-08-16
申请号：US14779769
申请日：2014-03-24
申请人： DONGJIN SEMICHEM CO., LTD.
发明人： Jung-Youl Lee , Young Bae Lim , Jong-Won Kim , Jae Woo Lee , Jae Hyun Kim
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C09D165/02 , G03F7/09 , G03F7/40
CPC分类号： C09D165/02 , C08G2261/124 , C08G2261/1422 , C08G2261/314 , C08G2261/3142 , C08G2261/3424 , C08G2261/45 , G03F7/094 , G03F7/40 , C08L61/06
摘要： An under-layer composition of resist having superior thermal stability, etching resistance, gap-filling property and void-preventing property, and a method for forming pattern using the same are disclosed. The under-layer composition of resist comprises: an aromatic ring containing polymer having the repeating unit of the following Formula 1; a compound of the following Formula 4; and an organic solvent. in Formula 1, R1 is a monocyclic or polycyclic aromatic hydrocarbon group having 5 to 20 carbon atoms, R2 and R3 is independently a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 14 carbon atoms, a is an integer of 1 to 3, and b is an integer of 0 to 2. in Formula 4, n is an integer of 1 to 250.
摘要翻译：公开了具有优异的热稳定性，耐蚀刻性，间隙填充性和防空气性的抗蚀剂的底层组合物，以及使用其形成图案的方法。抗蚀剂的底层组合物包含：含有下式1的重复单元的含芳环的聚合物; 下式4的化合物; 和有机溶剂。在式1中，R 1为碳原子数为5〜20的单环或多环芳香族烃基，R 2和R 3独立地为碳原子数4〜14的单环或多环芳香族烃基，a为1〜3的整数，b为1〜是0〜2的整数。在式4中，n为1〜250的整数。

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