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    • 8. 发明申请
    • METHOD OF GROWING CARBON NANOTUBES AND METHOD OF MANUFACTURING FIELD EMISSION DEVICE USING THE SAME
    • 碳纳米管的制造方法和使用该方法制造场致发射装置的方法
    • US20100009474A1
    • 2010-01-14
    • US11476654
    • 2006-06-29
    • Ha-Jin KimSang-Mock Lee
    • Ha-Jin KimSang-Mock Lee
    • H01L21/18B05D3/10C23C14/30C23C16/00C23C14/35
    • B01J37/0244B01J23/38B01J23/74B01J33/00B01J37/347B82Y30/00B82Y40/00C01B32/16H01J9/025H01J2201/30469
    • A method of growing carbon nanotubes and a method of manufacturing a field emission device using the same is provided. The method of growing carbon nanotubes includes steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote growing of carbon nanotubes, forming an inactivation layer on the catalyst metal layer to reduce the activity of the catalyst metal layer, and growing carbon nanotubes on a surface of the catalyst metal layer. Because the inactivation layer partially covers the catalyst metal layer, carbon nanotubes are grown on a portion of the catalyst metal layer that is not covered by the inactivation layer. Thus, density of the carbon nanotubes can be controlled. This method for growing carbon nanotubes can be used to make an emitter of a field emission device. The field emission device having carbon nanotube emitter made of this method has superior electron emission characteristics.
    • 提供生长碳纳米管的方法和制造使用其的场致发射器件的方法。 生长碳纳米管的方法包括制备基材的步骤,在基材上形成催化剂金属层以促进碳纳米管的生长,在催化剂金属层上形成失活层以降低催化剂金属层的活性和生长碳 纳米管在催化剂金属层的表面上。 因为失活层部分地覆盖催化剂金属层,所以在催化剂金属层的未被钝化层覆盖的部分上生长碳纳米管。 因此,可以控制碳纳米管的密度。 用于生长碳纳米管的这种方法可用于制造场致发射器件的发射极。 具有由该方法制成的碳纳米管发射体的场发射器件具有优异的电子发射特性。