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1. 发明授权

US09983067B2 Overheat detection circuit and semiconductor device 有权
公开(公告)号：US09983067B2
公开(公告)日：2018-05-29
申请号：US14692883
申请日：2015-04-22
申请人： Seiko Instruments Inc.
发明人： Masakazu Sugiura , Tsutomu Tomioka , Hideyuki Sawai , Atsushi Igarashi , Nao Otsuka , Daisuke Okano
IPC分类号： G01K7/01 , G01K3/00 , H01L27/02
CPC分类号： G01K7/01 , G01K3/005 , H01L27/0255
摘要： Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.

2. 发明授权

US09454174B2 Power supply voltage monitoring circuit, and electronic circuit including the power supply voltage monitoring circuit 有权
标题翻译：电源电压监控电路，电子电路包括电源电压监控电路
公开(公告)号：US09454174B2
公开(公告)日：2016-09-27
申请号：US14693460
申请日：2015-04-22
申请人： Seiko Instruments Inc.
发明人： Atsushi Igarashi , Nao Otsuka
IPC分类号： G05F5/00
CPC分类号： G05F5/00
摘要： Provided is a power supply voltage monitoring circuit capable of accurately detecting a power supply voltage with a small circuit scale and low power consumption. The power supply voltage monitoring circuit includes: a signal output circuit configured to output a signal voltage representing saturation characteristics with respect to an increase in power supply voltage; and a signal voltage monitoring circuit configured to output a signal representing that the signal voltage of the signal output circuit is normal, the signal voltage monitoring circuit including: a PMOS transistor including a gate connected to an output terminal of the signal output circuit; a first constant current circuit connected to a drain of the PMOS transistor; and an inverter including an input terminal connected to the drain of the PMOS transistor.
摘要翻译：提供一种能够以小的电路规模和低功耗精确地检测电源电压的电源电压监视电路。电源电压监视电路包括：信号输出电路，被配置为输出表示相对于电源电压的增加的饱和特性的信号电压; 信号电压监视电路，被配置为输出表示信号输出电路的信号电压正常的信号，所述信号电压监视电路包括：PMOS晶体管，包括与所述信号输出电路的输出端连接的栅极; 连接到PMOS晶体管的漏极的第一恒流电路; 以及反相器，包括连接到PMOS晶体管的漏极的输入端子。

3. 发明授权

US08829885B2 Voltage reference circuit 有权
标题翻译：电压参考电路
公开(公告)号：US08829885B2
公开(公告)日：2014-09-09
申请号：US13784139
申请日：2013-03-04
申请人： Seiko Instruments Inc.
发明人： Nao Otsuka , Kosuke Takada
IPC分类号： G05F3/16 , G05F1/56
CPC分类号： G05F1/46 , G05F1/561
摘要： Provided is a voltage reference circuit which is able to obtain high PSRR without a variation in power-supply voltage and an influence of noise. A voltage reference circuit for performing voltage-current conversion on forward voltages of PN junction elements and on a difference therebetween to generate a voltage so as not to depend on a temperature is constituted by an amplifier for controlling a temperature characteristic of a voltage of an output terminal, a source follower circuit for supplying a power to the amplifier, and a PMOS transistor which is controlled by the amplifier and which controls a current to flow into the PN junction elements.
摘要翻译：提供了能够在电源电压变化和噪声的影响的情况下获得高PSRR的电压基准电路。用于对PN结元件的正向电压进行电压 - 电流转换的电压参考电路和它们之间的差异以产生不依赖于温度的电压由用于控制输出电压的温度特性的放大器构成端子，用于向放大器供电的源极跟随器电路和由放大器控制并且控制电流流入PN结元件的PMOS晶体管。

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