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1. 发明申请

US20200264471A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20200264471A1
公开(公告)日：2020-08-20
申请号：US16865672
申请日：2020-05-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masatoshi YOKOYAMA , Shigeki KOMORI , Manabu SATO , Kenichi OKAZAKI , Shunpei YAMAZAKI
IPC分类号： G02F1/1333 , G02F1/1362 , G02F1/1343
摘要： To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

2. 发明申请

US20210072605A1 DISPLAY DEVICE 有权
公开(公告)号：US20210072605A1
公开(公告)日：2021-03-11
申请号：US17082094
申请日：2020-10-28
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masatoshi YOKOYAMA , Shigeki KOMORI , Manabu SATO , Kenichi OKAZAKI , Shunpei YAMAZAKI
IPC分类号： G02F1/1362 , G02F1/1333 , G02F1/1343
摘要： To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

3. 发明申请

US20180374957A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING SEMICONDUCTOR DEVICE, DISPLAY MODULE INCLUDING DISPLAY DEVICE, AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND DISPLAY MODULE 审中-公开
公开(公告)号：US20180374957A1
公开(公告)日：2018-12-27
申请号：US16110488
申请日：2018-08-23
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masahiro KATAYAMA , Yasutaka NAKAZAWA , Masatoshi YOKOYAMA , Masahiko HAYAKAWA , Kenichi OKAZAKI , Shunsuke KOSHIOKA
IPC分类号： H01L29/786 , H01L27/12 , G09G3/20 , G09G5/00 , G06F3/041 , G09G3/36
摘要： A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.

4. 发明申请

US20220137469A1 DISPLAY DEVICE 有权
公开(公告)号：US20220137469A1
公开(公告)日：2022-05-05
申请号：US17580742
申请日：2022-01-21
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masatoshi YOKOYAMA , Shigeki KOMORI , Manabu SATO , Kenichi OKAZAKI , Shunpei YAMAZAKI
IPC分类号： G02F1/1362 , G02F1/1333 , G02F1/1343
摘要： To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

5. 发明申请

US20150270403A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING SEMICONDUCTOR DEVICE, DISPLAY MODULE INCLUDING DISPLAY DEVICE, AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND DISPLAY MODULE 审中-公开
标题翻译：半导体器件，包括半导体器件的显示器件，包括显示器件的显示器模块和包括半导体器件的电子器件，显示器件和显示器模块
公开(公告)号：US20150270403A1
公开(公告)日：2015-09-24
申请号：US14659792
申请日：2015-03-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masahiro KATAYAMA , Yasutaka NAKAZAWA , Masatoshi YOKOYAMA , Masahiko HAYAKAWA , Kenichi OKAZAKI , Shunsuke KOSHIOKA
IPC分类号： H01L29/786 , H01L29/04 , G09G5/00 , H01L27/12 , G06F3/047 , H01L29/24 , H01L29/45
CPC分类号： H01L29/7869 , G06F3/041 , G09G3/20 , G09G3/3674 , G09G3/3677 , G09G3/3685 , G09G3/3688 , G09G5/003 , G09G2300/0404 , G09G2300/0426 , G09G2310/0267 , G09G2310/0275 , H01L27/1225 , H01L27/1248 , H01L29/78606
摘要： A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.
摘要翻译：提供一种包括晶体管和电连接到晶体管的布线的半导体器件，其中由于其特定结构而具有优异的电特性。第一导电膜，第一导电膜上的第一绝缘膜，第一绝缘膜上的第二导电膜，第二导电膜上的第二绝缘膜，通过开口电连接到第一导电膜的第三导电膜在第一绝缘膜和第二绝缘膜中，并且在第三导电膜上设置第三绝缘膜。第三导电膜包括铟，锡和氧，第三绝缘膜包括硅和氮，并且通过热解吸光谱法从第三绝缘膜释放的氨分子的数量小于或等于1×1015分子/ cm 3。

6. 发明申请

US20150140734A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20150140734A1
公开(公告)日：2015-05-21
申请号：US14585918
申请日：2014-12-30
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takayuki CHO , Shunsuke KOSHIOKA , Masatoshi YOKOYAMA , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×1018 atoms/cm3 at the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.
摘要翻译：为了提供一种高可靠性的半导体器件，其包括具有氧化物半导体的晶体管，在包括设置在玻璃基板上的具有底栅结构的交错晶体管的半导体器件中，栅极绝缘膜，其中第一栅极绝缘膜和第二栅极绝缘膜其栅极绝缘膜的组成彼此不同，按栅极电极层设置。或者，在具有底栅结构的交错晶体管中，在玻璃基板和栅电极层之间设置保护绝缘膜。包含在玻璃基板中的金属元素在第一栅极绝缘膜和第二栅极绝缘膜之间的界面处或者栅极电极层和栅极绝缘膜之间的界面处具有低于或等于5×1018原子/ cm3的浓度。

7. 发明申请

US20200026118A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20200026118A1
公开(公告)日：2020-01-23
申请号：US16583817
申请日：2019-09-26
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masatoshi YOKOYAMA , Shigeki KOMORI , Manabu SATO , Kenichi OKAZAKI , Shunpei YAMAZAKI
IPC分类号： G02F1/1333 , G02F1/1362 , G02F1/1343
摘要： To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

8. 发明申请

US20180329244A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20180329244A1
公开(公告)日：2018-11-15
申请号：US16026227
申请日：2018-07-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masatoshi YOKOYAMA , Shigeki KOMORI , Manabu SATO , Kenichi OKAZAKI , Shunpei YAMAZAKI
IPC分类号： G02F1/1368 , H01L29/786 , G02F1/1333 , H01L29/423 , H01L29/24 , H01L29/04 , H01L27/12 , G02F1/1343 , G02F1/1362
CPC分类号： G02F1/133345 , G02F1/134309 , G02F1/13439 , G02F1/136227 , G02F2001/134372 , G02F2202/02 , G02F2202/10
摘要： To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

9. 发明申请

US20160246090A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20160246090A1
公开(公告)日：2016-08-25
申请号：US15144916
申请日：2016-05-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masatoshi YOKOYAMA , Shigeki KOMORI , Manabu SATO , Kenichi OKAZAKI , Shunpei YAMAZAKI
IPC分类号： G02F1/1368 , H01L29/24 , G02F1/1362 , H01L27/12 , G02F1/1333 , G02F1/1343 , H01L29/786 , H01L29/423
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/134309 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136277 , G02F2001/134372 , G02F2202/02 , G02F2202/10 , H01L27/1222 , H01L27/1225 , H01L27/1248 , H01L27/1255 , H01L29/04 , H01L29/24 , H01L29/42356 , H01L29/42384 , H01L29/7869
摘要： To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

10. 发明申请

US20140022480A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20140022480A1
公开(公告)日：2014-01-23
申请号：US13942468
申请日：2013-07-15
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masatoshi YOKOYAMA , Shigeki KOMORI , Manabu SATO , Kenichi OKAZAKI , Shunpei YAMAZAKI
IPC分类号： G02F1/1333
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/134309 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136277 , G02F2001/134372 , G02F2202/02 , G02F2202/10 , H01L27/1222 , H01L27/1225 , H01L27/1248 , H01L27/1255 , H01L29/04 , H01L29/24 , H01L29/42356 , H01L29/42384 , H01L29/7869
摘要： To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.
摘要翻译：为了抑制由于来自有机绝缘膜的释放气体导致的晶体管的特性的变化，使得显示装置的可靠性增加。显示装置包括晶体管，设置在晶体管上方的有机绝缘膜，以减少由于晶体管引起的不均匀性以及有机绝缘膜上的电容器。有机绝缘膜的整个表面没有被电容器的部件（透明导电层和无机绝缘膜）覆盖，并且来自有机绝缘膜的释放气体可以从上表面的暴露部分释放到外部的有机绝缘膜。

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