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    • 1. 发明授权
    • Liquid crystal display
    • 液晶显示器
    • US08350978B2
    • 2013-01-08
    • US13087312
    • 2011-04-14
    • Seok-Je SeongJi-Eun Lee
    • Seok-Je SeongJi-Eun Lee
    • G02F1/1368
    • G02F1/133707G02F1/136213G02F2001/134318
    • An LCD includes: a first substrate; first, second, and third gate lines extending along a first direction, formed over the first substrate and being parallel with each other; data lines insulated from the first gate line, the second gate line, and the third gate line and extending along a second direction that intersects the first direction; first, second, and third thin film transistors connected with the first gate lines, the second gate line, the third gate line, respectively and connected with the data lines; a passivation layer covering the first thin film transistor, the second thin film transistor, and the third thin film transistor; and first, second, and third pixel electrodes formed over the passivation layer and connected with the first thin film transistor, the second thin film transistor, and the third thin film transistor, respectively.
    • LCD包括:第一基板; 第一,第二和第三栅极线,沿着第一方向延伸,形成在第一基板上并且彼此平行; 数据线与第一栅极线,第二栅极线和第三栅极线绝缘并且沿着与第一方向相交的第二方向延伸; 分别与第一栅极线,第二栅极线,第三栅极线连接的数据线连接的第一,第二和第三薄膜晶体管; 覆盖第一薄膜晶体管,第二薄膜晶体管和第三薄膜晶体管的钝化层; 以及分别形成在钝化层上并与第一薄膜晶体管,第二薄膜晶体管和第三薄膜晶体管连接的第一,第二和第三像素电极。
    • 3. 发明授权
    • Thin film transistor array panel and manufacturing method of the same
    • 薄膜晶体管阵列及其制造方法相同
    • US08040449B2
    • 2011-10-18
    • US12421095
    • 2009-04-09
    • Seok-Je SeongYoon-Seok ChoiHyung-Don Na
    • Seok-Je SeongYoon-Seok ChoiHyung-Don Na
    • G02F1/136G02F1/1343H01L27/01
    • H01L27/124H01L27/1214H01L27/1288
    • A thin film transistor array panel includes a substrate; a gate electrode formed on the substrate; a data line formed on the substrate; a gate insulating layer formed on the data line and the gate electrode, and having a first contact hole exposing the gate electrode, and a second contact hole exposing the data line; a gate line intersecting the data line, and connected to the gate electrode through the first contact hole; a semiconductor formed the gate insulating layer, and including a channel of a thin film transistor; a source electrode connected to the data line through the second contact hole; a drain electrode opposite to the source electrode with respect to the channel on the semiconductor; a passivation layer having a third contact hole exposing the drain electrode; and a pixel electrode connected to the drain electrode through the third contact hole are included.
    • 薄膜晶体管阵列面板包括基板; 形成在所述基板上的栅电极; 形成在所述基板上的数据线; 栅极绝缘层,形成在数据线和栅电极上,并具有暴露栅电极的第一接触孔和暴露数据线的第二接触孔; 与数据线相交的栅极线,并通过第一接触孔连接到栅电极; 半导体形成栅极绝缘层,并且包括薄膜晶体管的沟道; 源电极,通过第二接触孔连接到数据线; 相对于半导体上的沟道与源电极相对的漏电极; 钝化层,具有暴露所述漏电极的第三接触孔; 并且包括通过第三接触孔连接到漏电极的像素电极。
    • 4. 发明申请
    • THIN FILM TRANSISTOR SUBSTRATE AND FABRICATING METHOD THEREOF
    • 薄膜晶体管基板及其制造方法
    • US20110012123A1
    • 2011-01-20
    • US12889833
    • 2010-09-24
    • Seok-Je SeongKi-Hun JeongJin-Young Choi
    • Seok-Je SeongKi-Hun JeongJin-Young Choi
    • H01L33/08H01L21/8234
    • H01L27/124G02F1/1345G02F2001/13456
    • A thin film transistor substrate and fabricating method thereof by which the size of the thin film transistor substrate is reduced by constructing data signal supply lines, each of which supplies a pixel data voltage to a data line, with different metal lines, respectively includes gate and data lines crossing each other on a substrate, with a gate insulating layer disposed therebetween, a thin film transistor formed on each intersection between the gate and data lines, a display area on which a pixel electrode connected to the thin film transistor is formed, a first data signal supply line comprising a first conductive layer connected to the data line in a non-display area located at a periphery of the display area, and a second data signal supply line alternating with the first data signal supply line, with the gate insulating layer disposed therebetween, the second data signal supply line comprising a second conductive layer connected to the data line.
    • 一种薄膜晶体管基板及其制造方法,其中通过构成数据信号供给线(其中每个向数据线提供像不同金属线的像素数据电压)分别包括栅极和 在基板上彼此交叉的数据线,其间设置有栅极绝缘层,形成在栅极和数据线之间的每个交叉点上的薄膜晶体管,形成连接到薄膜晶体管的像素电极的显示区域, 第一数据信号供给线包括连接到位于显示区域周围的非显示区域中的数据线的第一导电层和与第一数据信号供给线交替的第二数据信号供给线,栅极绝缘 所述第二数据信号供给线包括连接到所述数据线的第二导电层。
    • 5. 发明申请
    • THIN FILM TRANSISTOR SUBSTRATE AND FABRICATING METHOD THEREOF
    • 薄膜晶体管基板及其制造方法
    • US20080128699A1
    • 2008-06-05
    • US11949863
    • 2007-12-04
    • Seok-Je SeongKi-Hun JeongJin-Young Choi
    • Seok-Je SeongKi-Hun JeongJin-Young Choi
    • H01L29/04H01L21/00H01L21/84
    • H01L27/124G02F1/1345G02F2001/13456
    • A thin film transistor substrate and fabricating method thereof by which the size of the thin film transistor substrate is reduced by constructing data signal supply lines, each of which supplies a pixel data voltage to a data line, with different metal lines, respectively includes gate and data lines crossing each other on a substrate, with a gate insulating layer disposed therebetween, a thin film transistor formed on each intersection between the gate and data lines, a display area on which a pixel electrode connected to the thin film transistor is formed, a first data signal supply line comprising a first conductive layer connected to the data line in a non-display area located at a periphery of the display area, and a second data signal supply line alternating with the first data signal supply line, with the gate insulating layer disposed therebetween, the second data signal supply line comprising a second conductive layer connected to the data line.
    • 一种薄膜晶体管基板及其制造方法,其中通过构成数据信号供给线(其中每个向数据线提供像不同金属线的像素数据电压)分别包括栅极和 在基板上彼此交叉的数据线,其间设置有栅极绝缘层,形成在栅极和数据线之间的每个交叉点上的薄膜晶体管,形成连接到薄膜晶体管的像素电极的显示区域, 第一数据信号供给线包括连接到位于显示区域周围的非显示区域中的数据线的第一导电层和与第一数据信号供给线交替的第二数据信号供给线,栅极绝缘 所述第二数据信号供给线包括连接到所述数据线的第二导电层。
    • 7. 发明授权
    • Thin film transistor substrate and fabricating method thereof
    • 薄膜晶体管基板及其制造方法
    • US08004016B2
    • 2011-08-23
    • US12889833
    • 2010-09-24
    • Seok-Je SeongKi-Hun JeongJin-Young Choi
    • Seok-Je SeongKi-Hun JeongJin-Young Choi
    • H01L29/786H01L21/8234
    • H01L27/124G02F1/1345G02F2001/13456
    • A thin film transistor substrate and fabricating method thereof by which the size of the thin film transistor substrate is reduced by constructing data signal supply lines, each of which supplies a pixel data voltage to a data line, with different metal lines, respectively includes gate and data lines crossing each other on a substrate, with a gate insulating layer disposed therebetween, a thin film transistor formed on each intersection between the gate and data lines, a display area on which a pixel electrode connected to the thin film transistor is formed, a first data signal supply line comprising a first conductive layer connected to the data line in a non-display area located at a periphery of the display area, and a second data signal supply line alternating with the first data signal supply line, with the gate insulating layer disposed therebetween, the second data signal supply line comprising a second conductive layer connected to the data line.
    • 一种薄膜晶体管基板及其制造方法,其中通过构成数据信号供给线(其中每个向数据线提供像不同金属线的像素数据电压)分别包括栅极和 在基板上彼此交叉的数据线,其间设置有栅极绝缘层,形成在栅极和数据线之间的每个交叉点上的薄膜晶体管,形成连接到薄膜晶体管的像素电极的显示区域, 第一数据信号供给线包括连接到位于显示区域周围的非显示区域中的数据线的第一导电层和与第一数据信号供给线交替的第二数据信号供给线,栅极绝缘 所述第二数据信号供给线包括连接到所述数据线的第二导电层。
    • 9. 发明授权
    • Thin film transistor substrate and fabricating method thereof
    • 薄膜晶体管基板及其制造方法
    • US07821040B2
    • 2010-10-26
    • US11949863
    • 2007-12-04
    • Seok-Je SeongKi-Hun JeongJin-Young Choi
    • Seok-Je SeongKi-Hun JeongJin-Young Choi
    • H01L29/786H01L21/8234
    • H01L27/124G02F1/1345G02F2001/13456
    • A thin film transistor substrate and fabricating method thereof by which the size of the thin film transistor substrate is reduced by constructing data signal supply lines, each of which supplies a pixel data voltage to a data line, with different metal lines, respectively includes gate and data lines crossing each other on a substrate, with a gate insulating layer disposed therebetween, a thin film transistor formed on each intersection between the gate and data lines, a display area on which a pixel electrode connected to the thin film transistor is formed, a first data signal supply line comprising a first conductive layer connected to the data line in a non-display area located at a periphery of the display area, and a second data signal supply line alternating with the first data signal supply line, with the gate insulating layer disposed therebetween, the second data signal supply line comprising a second conductive layer connected to the data line.
    • 一种薄膜晶体管基板及其制造方法,其中通过构成数据信号供给线(其中每个向数据线提供像不同金属线的像素数据电压)分别包括栅极和 在基板上彼此交叉的数据线,其间设置有栅极绝缘层,形成在栅极和数据线之间的每个交叉点上的薄膜晶体管,形成连接到薄膜晶体管的像素电极的显示区域, 第一数据信号供给线包括连接到位于显示区域周围的非显示区域中的数据线的第一导电层和与第一数据信号供给线交替的第二数据信号供给线,栅极绝缘 所述第二数据信号供给线包括连接到所述数据线的第二导电层。