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1. 发明授权

US09048218B2 Semiconductor device with buried gates and method for fabricating the same 有权
标题翻译：具有埋栅的半导体器件及其制造方法
公开(公告)号：US09048218B2
公开(公告)日：2015-06-02
申请号：US12939534
申请日：2010-11-04
申请人： Seung-Ryong Lee , Tae-Hang Ahn
发明人： Seung-Ryong Lee , Tae-Hang Ahn
IPC分类号： H01L29/732 , H01L29/423 , H01L29/165 , H01L29/78
CPC分类号： H01L29/4236 , H01L29/165 , H01L29/78 , H01L29/785
摘要： A semiconductor device includes a supplementary layer and a silicon layer stacked over a substrate, a trench penetrating the supplementary layer and the silicon layer and formed over the substrate, a gate insulation layer formed along a surface of the trench, and a buried gate formed over the gate insulation layer and filling a portion of the trench.
摘要翻译：半导体器件包括辅助层和层叠在衬底上的硅层，穿透辅助层和硅层并形成在衬底上的沟槽，沿着沟槽的表面形成的栅极绝缘层和形成在其上的掩埋栅极栅极绝缘层并填充沟槽的一部分。

2. 发明申请

US20060182850A1 Composition of film envelope for growing clean agricultural products, method for fabricating the same, and cultivation method for clean agricultural products 审中-公开
标题翻译：生产清洁农产品的薄膜信封的组成，其制造方法以及清洁农产品的栽培方法
公开(公告)号：US20060182850A1
公开(公告)日：2006-08-17
申请号：US10547225
申请日：2004-02-06
申请人： Kyung-Sub Lee , Hyun-Seon Hong , Min-Uk Kim , Seung-Ryong Lee
发明人： Kyung-Sub Lee , Hyun-Seon Hong , Min-Uk Kim , Seung-Ryong Lee
IPC分类号： A23B7/148
CPC分类号： C08K3/04
摘要： Disclosed are a synthetic resin film envelope and a cultivating method for clean agricultural products. The synthetic resin film envelope is formed with a double-layer sectional structure having a thickness of about 0.02 to 0.1 mm and includes 60 to 90 weight percent of polypropylene resin having a melt index of 3 to 10 g/min at a temperature of 185° C., 1 to 20 weight percent of an antifogging agent, 1 to 10 weight percent of an antistatic agent, and 1 to 10 weight percent of white carbon.
摘要翻译：公开了一种合成树脂膜包膜和清洁农产品的栽培方法。合成树脂薄膜外壳形成为具有约0.02至0.1mm厚度的双层截面结构，并且在185℃的温度下包括60至90重量％的熔体指数为3至10g / min的聚丙烯树脂，1〜20重量％的防雾剂，1〜10重量％的抗静电剂和1〜10重量％的白炭。

3. 发明申请

US20100193901A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100193901A1
公开(公告)日：2010-08-05
申请号：US12493594
申请日：2009-06-29
申请人： Se-Aug Jang , Hong-Seon Yang , Ja-Chun Ku , Seung-Ryong Lee
发明人： Se-Aug Jang , Hong-Seon Yang , Ja-Chun Ku , Seung-Ryong Lee
IPC分类号： H01L23/535 , H01L21/768
CPC分类号： H01L21/28008 , H01L21/823437 , H01L21/823462 , H01L21/823481 , H01L27/1052 , H01L27/10808 , H01L27/10891 , H01L27/10894 , H01L27/10897 , H01L29/4236
摘要： A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer.
摘要翻译：一种半导体器件包括：衬底，其包括沟槽，填充沟槽的一部分的掩埋栅极，形成在掩埋栅极上以间隙填充沟槽的其余部分的层间电介质层，以及覆盖基本上整个表面的保护层包括层间电介质层的基板。

4. 发明授权

US07563726B2 Semiconductor device with multiple gate dielectric layers and method for fabricating the same 失效
标题翻译：具有多个栅介质层的半导体器件及其制造方法
公开(公告)号：US07563726B2
公开(公告)日：2009-07-21
申请号：US11227156
申请日：2005-09-16
申请人： Heung-Jae Cho , Kwan-Yong Lim , Seung-Ryong Lee
发明人： Heung-Jae Cho , Kwan-Yong Lim , Seung-Ryong Lee
IPC分类号： H01L21/31
CPC分类号： H01L21/28202 , H01L21/823842 , H01L21/823857 , H01L27/105 , H01L27/1052 , H01L27/10873 , H01L27/10894 , H01L29/518
摘要： Disclosed are a semiconductor device with dual gate dielectric layers and a method for fabricating the same. The semiconductor device includes: a silicon substrate divided into a cell region where NMOS transistors are formed and a peripheral region where NMOS and PMOS transistors are formed; a targeted silicon oxide layer formed on the silicon substrate in the cell region; an oxynitride layer formed on the silicon substrate in the peripheral region; a first gate structure formed in the cell region; a second gate structure formed on the oxynitride layer in an NMOS region of the peripheral region; and a third gate structure formed on the oxynitride layer in a PMOS region of the peripheral region.
摘要翻译：公开了具有双栅介质层的半导体器件及其制造方法。半导体器件包括：分为形成NMOS晶体管的单元区域的硅衬底和形成NMOS和PMOS晶体管的外围区域; 形成在所述电池区域中的所述硅衬底上的目标氧化硅层; 在周边区域中形成在硅衬底上的氧氮化物层; 形成在所述单元区域中的第一栅极结构; 形成在所述周边区域的NMOS区域中的氮氧化物层上的第二栅极结构; 以及形成在外围区域的PMOS区域中的氧氮化物层上的第三栅极结构。

5. 发明申请

US20050188506A1 Door hinge structure for refrigerator 有权
标题翻译：冰箱门铰链结构
公开(公告)号：US20050188506A1
公开(公告)日：2005-09-01
申请号：US10903431
申请日：2004-07-30
申请人： Seung-Ryong Lee , Sang-Jin Lee
发明人： Seung-Ryong Lee , Sang-Jin Lee
IPC分类号： E05D7/08 , E05D11/06 , E05D11/10 , E05F1/12 , F25D23/02
CPC分类号： E05D11/1078 , E05D7/081 , E05F1/1215 , E05Y2900/31 , F25D23/028 , F25D2323/024 , Y10T16/53845 , Y10T16/540255 , Y10T16/54028 , Y10T16/5515
摘要： Disclosed herein is a door hinge structure for a refrigerator. The door hinge structure comprises an upper fixture unit which is screwed to a predetermined front upper portion of a refrigerator body, and has an upper hinge pin to be inserted in a top aperture formed at an upper surface of a refrigerator door, an upper hinge unit which is mounted on the upper surface of the door, and has a through opening for allowing a distal end of the upper hinge pin to be slidably inserted therethrough, the upper hinge unit being coupled with the upper fixture unit by making use of a torsion spring so that it is vertically spaced therewith, a lower fixture unit which is screwed to a predetermined front lower portion of the body, and has a lower hinge pin to be inserted in a bottom aperture formed, at a lower surface of the door, a lower hinge unit which is mounted on the lower surface of the door, and has a through opening for the insertion of the lower hinge pin, and a stopper member which is interposed between the lower fixture unit and the lower hinge unit and is adapted to stop pivotal movement of the door at least one time.
摘要翻译：这里公开了一种用于冰箱的门铰链结构。门铰链结构包括上部固定单元，该上部固定单元螺合到冰箱主体的预定前部上部，并且具有上部铰链销以插入形成在冰箱门的上表面上的顶部孔中，上部铰链单元其安装在门的上表面上，并且具有用于允许上铰链销的远端可滑动地插入其中的通孔，上铰链单元通过使用扭力弹簧与上固定单元联接使其与其垂直间隔开，下固定单元螺纹连接到主体的预定的前下部，并且具有下铰链销以插入形成在门的下表面处的下孔中的下铰链销铰链单元，其安装在门的下表面上，并具有用于插入下铰链销的通孔，以及设置在下固定单元和下铰链单元之间的止动构件 nd适于停止门的枢转运动至少一次。

6. 发明授权

US08736017B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08736017B2
公开(公告)日：2014-05-27
申请号：US12493594
申请日：2009-06-29
申请人： Se-Aug Jang , Hong-Seon Yang , Ja-Chun Ku , Seung-Ryong Lee
发明人： Se-Aug Jang , Hong-Seon Yang , Ja-Chun Ku , Seung-Ryong Lee
IPC分类号： H01L21/70
CPC分类号： H01L21/28008 , H01L21/823437 , H01L21/823462 , H01L21/823481 , H01L27/1052 , H01L27/10808 , H01L27/10891 , H01L27/10894 , H01L27/10897 , H01L29/4236
摘要： A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer.
摘要翻译：一种半导体器件包括：衬底，其包括沟槽，填充沟槽的一部分的掩埋栅极，形成在掩埋栅极上以间隙填充沟槽的其余部分的层间电介质层，以及覆盖基本上整个表面的保护层包括层间电介质层的基板。

7. 发明授权

US07825014B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07825014B2
公开(公告)日：2010-11-02
申请号：US12165339
申请日：2008-06-30
申请人： Min-Gyu Sung , Hong-Seon Yang , Tae-Kwon Lee , Won Kim , Kwan-Yong Lim , Seung-Ryong Lee
发明人： Min-Gyu Sung , Hong-Seon Yang , Tae-Kwon Lee , Won Kim , Kwan-Yong Lim , Seung-Ryong Lee
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/28247 , H01L21/28061 , H01L21/28114 , H01L29/42376 , H01L29/4941
摘要： A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source gas including nitrogen, wherein the purge is performed at a given temperature for a given period of time in a manner that a reaction between the first layer and the nitrogen used when forming the second layer is controlled.
摘要翻译：一种制造半导体器件的方法包括：形成包括钨的第一层的图案，在包括氮的气氛中对图案进行气体流动处理，并且使用包括氮的源气体在图案上形成第二层，其中在给定的温度下以在第一层和形成第二层之间所用的氮之间的反应被控制的方式进行吹扫。

8. 发明申请

US20080079048A1 SEMICONDUCTOR DEVICE WITH BULB-TYPE RECESSED CHANNEL AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有BULB类型的通道的半导体器件及其制造方法
公开(公告)号：US20080079048A1
公开(公告)日：2008-04-03
申请号：US11862453
申请日：2007-09-27
申请人： Yong-Soo Kim , Hong-Seon Yang , Se-Aug Jang , Seung-Ho Pyi , Kwon Hong , Heung-Jae Cho , Kwan-Yong Lim , Min-Gyu Sung , Seung-Ryong Lee , Tae-Yoon Kim
发明人： Yong-Soo Kim , Hong-Seon Yang , Se-Aug Jang , Seung-Ho Pyi , Kwon Hong , Heung-Jae Cho , Kwan-Yong Lim , Min-Gyu Sung , Seung-Ryong Lee , Tae-Yoon Kim
IPC分类号： H01L27/108 , H01L21/3205
CPC分类号： H01L29/66553 , H01L27/10876 , H01L29/518 , H01L29/66621
摘要： A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.
摘要翻译：一种制造半导体器件的方法，包括提供具有灯泡型凹陷区域的衬底，在灯泡型凹陷区域上形成栅极绝缘层和衬底，并在栅极绝缘层上形成栅极导电层。栅极导电层填充灯泡型凹陷区域。栅极导电层包括两个或多个导电层和导电层之间的不连续界面。

9. 发明授权

US07838364B2 Semiconductor device with bulb-type recessed channel and method for fabricating the same 有权
标题翻译：具有灯泡型凹槽的半导体器件及其制造方法
公开(公告)号：US07838364B2
公开(公告)日：2010-11-23
申请号：US11862453
申请日：2007-09-27
申请人： Yong-Soo Kim , Hong-Seon Yang , Se-Aug Jang , Seung-Ho Pyi , Kwon Hong , Heung-Jae Cho , Kwan-Yong Lim , Min-Gyu Sung , Seung-Ryong Lee , Tae-Yoon Kim
发明人： Yong-Soo Kim , Hong-Seon Yang , Se-Aug Jang , Seung-Ho Pyi , Kwon Hong , Heung-Jae Cho , Kwan-Yong Lim , Min-Gyu Sung , Seung-Ryong Lee , Tae-Yoon Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/66553 , H01L27/10876 , H01L29/518 , H01L29/66621
摘要： A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.
摘要翻译：一种制造半导体器件的方法，包括提供具有灯泡型凹陷区域的衬底，在灯泡型凹陷区域上形成栅极绝缘层和衬底，并在栅极绝缘层上形成栅极导电层。栅极导电层填充灯泡型凹陷区域。栅极导电层包括两个或多个导电层和导电层之间的不连续界面。

10. 发明申请

US20090111256A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20090111256A1
公开(公告)日：2009-04-30
申请号：US12165339
申请日：2008-06-30
申请人： Min-Gyu SUNG , Hong-Seon Yang , Tae-Kwon Lee , Won Kim , Kwan-Yong Lim , Seung-Ryong Lee
发明人： Min-Gyu SUNG , Hong-Seon Yang , Tae-Kwon Lee , Won Kim , Kwan-Yong Lim , Seung-Ryong Lee
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： H01L21/28247 , H01L21/28061 , H01L21/28114 , H01L29/42376 , H01L29/4941
摘要： A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source gas including nitrogen, wherein the purge is performed at a given temperature for a given period of time in a manner that a reaction between the first layer and the nitrogen used when forming the second layer is controlled.
摘要翻译：一种制造半导体器件的方法包括：形成包括钨的第一层的图案，在包括氮的气氛中对图案进行气体流动处理，并且使用包括氮的源气体在图案上形成第二层，其中在给定的温度下以在第一层和形成第二层之间所用的氮之间的反应被控制的方式进行吹扫。

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