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1. 发明授权

US10067372B2 LCD improving color shift at large viewing angle 有权
公开(公告)号：US10067372B2
公开(公告)日：2018-09-04
申请号：US14896676
申请日：2015-11-20
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd. , WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Yuejun Tang , Dejiun Li , Hongqing Cui , Tsungying Yang
IPC分类号： G02F1/1335 , G02F1/1362
摘要： An LCD includes a backlight module, an array substrate, and a color filter layer. The color filter layer includes a first filter unit, a second filter unit and a black matrix unit. A transmittance rate of the second filter unit is larger than that of the first filter unit. The black matrix layer is connected between the first filter unit and second filter unit. The width of the black matrix unit is larger than that of the third black matrix unit. The width of the black matrix unit facing the first filter unit is larger than that of the black matrix unit facing the second filter unit. This kind of asymmetrical black matrix layer not only best prevents lowering the pixel aperture ratio, but also improves color shift of images when light goes through pixels of low transmittance as pixels of high transmittance are turned off.

2. 发明授权

US10000047B2 Method for manufacturing curved liquid crystal display panel 有权
公开(公告)号：US10000047B2
公开(公告)日：2018-06-19
申请号：US14772389
申请日：2015-05-15
申请人： WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD.
发明人： Haiyan Sun , Dejiun Li , Tsungying Yang , Dandan Liu
IPC分类号： G02F1/1333 , G02F1/1339 , G02F1/1341 , B32B37/10 , B32B37/12 , B32B37/14 , B32B38/18
CPC分类号： B32B37/1018 , B32B37/12 , B32B37/14 , B32B38/1866 , B32B2305/72 , B32B2309/12 , B32B2310/0831 , B32B2457/202 , G02F1/1333 , G02F1/1339 , G02F1/1341
摘要： The present invention provides a method for manufacturing a curved liquid crystal display panel, which comprises coating a sealing gum on a first or a second frame sealing region; filing liquid crystals between the two substrates and adhering the two substrates together; performing a first curing on partial sealing gum on a first set or a third set of frame bodies; bending the first set and the third set of frame bodies obtained after the first curing along the extension direction of the first set of frame bodies; performing a second curing on uncured sealing gum on the two bended substrates.

3. 发明授权

US11031455B2 OLED tiled display and a related tiling method 有权
公开(公告)号：US11031455B2
公开(公告)日：2021-06-08
申请号：US16068867
申请日：2018-04-04
申请人： Wuhan China Star Optoelectronics Technology Co., Ltd.
发明人： Yuejun Tang , Yang Chen , Dandan Liu , Xiaohui Jiang , Tsungying Yang , Dejiun Li
IPC分类号： H01L27/32 , H01L51/52 , H01L51/56
摘要： The OLED tiled display includes front and back lighting display units that emitting lights toward each other. The front lighting display unit includes a first substrate and a first organic light emitting device. The back lighting display unit includes a second substrate and a second organic light emitting device. The first and second light emitting devices neighbor laterally on each other, but are vertically aligned to a second extended section of the second substrate and a first extended section of the first substrate, respectively. The present invention achieves small gaps and resolves the problem of obvious gaps in an OLED tiled display by piecing together the front and back lighting display units, where the substrate of the front lighting display unit functions as encapsulation layer to the back lighting display unit, and the substrate of the back lighting display unit functions as encapsulation layer to the front lighting display unit.

4. 发明授权

US09159775B1 Anode connection structure of organic light-emitting diode and manufacturing method thereof 有权
标题翻译：有机发光二极管的阳极连接结构及其制造方法
公开(公告)号：US09159775B1
公开(公告)日：2015-10-13
申请号：US14732718
申请日：2015-06-06
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Tsungying Yang
IPC分类号： H01L21/00 , H01L27/32 , H01L51/56 , H01L51/52 , H01L29/786
CPC分类号： H01L27/3248 , H01L29/41733 , H01L29/458 , H01L29/78603 , H01L29/78672 , H01L29/78675 , H01L51/5206 , H01L51/56 , H01L2227/323
摘要： A method is provided for manufacturing an anode connection structure of an organic light-emitting diode. The anode connection structure includes: a thin-film transistor and an anode of an organic light-emitting diode arrange don the thin-film transistor. The thin-film transistor includes a low-temperature poly-silicon layer formed on a substrate, a gate insulation layer formed on the low-temperature poly-silicon layer, a gate formed on the gate insulation layer, a protection layer formed on the gate, and a source/drain formed on the protection layer. The method includes a step of forming a hole in the thin-film transistor to expose the low-temperature poly-silicon layer and a step of forming an electrically conductive layer in the hole for direct engagement with the low-temperature poly-silicon layer to serve as an anode and also the source/drain of the thin-film transistor. The anode of the organic light-emitting diode is thus directly connected to the low-temperature poly-silicon layer.
摘要翻译：提供一种用于制造有机发光二极管的阳极连接结构的方法。阳极连接结构包括：薄膜晶体管和有机发光二极管的阳极排列成薄膜晶体管。薄膜晶体管包括形成在基板上的低温多晶硅层，形成在低温多晶硅层上的栅极绝缘层，形成在栅极绝缘层上的栅极，形成在栅极上的保护层，以及形成在保护层上的源极/漏极。该方法包括在薄膜晶体管中形成空穴以暴露低温多晶硅层的步骤和在孔中形成导电层以与低温多晶硅层直接接合的步骤用作阳极以及薄膜晶体管的源极/漏极。因此，有机发光二极管的阳极直接连接到低温多晶硅层。

5. 发明授权

US09117780B2 Anode connection structure of organic light-emitting diode and manufacturing method thereof 有权
标题翻译：有机发光二极管的阳极连接结构及其制造方法
公开(公告)号：US09117780B2
公开(公告)日：2015-08-25
申请号：US14008607
申请日：2013-09-04
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Tsungying Yang
IPC分类号： H01L27/15 , H01L29/16 , H01L31/12 , H01L33/00 , H01L27/32 , H01L51/52 , H01L51/56
CPC分类号： H01L27/3248 , H01L29/41733 , H01L29/458 , H01L29/78603 , H01L29/78672 , H01L29/78675 , H01L51/5206 , H01L51/56 , H01L2227/323
摘要： The present invention provides an anode connection structure of an organic light-emitting diode and a manufacture method thereof. The structure includes: a thin-film transistor (20) and an anode (40) of an organic light-emitting diode arrange don the thin-film transistor (20). The thin-film transistor (20) includes a low-temperature poly-silicon layer (24) formed on a substrate (22), a gate insulation layer (26) formed on the low-temperature poly-silicon layer (24), a gate formed on the gate insulation layer (26), a protection layer (27) formed on the gate, and a source/drain (28) formed on the protection layer (27). The anode (40) of the organic light-emitting diode is connected to the low-temperature poly-silicon layer (24). The present invention makes the anode of the organic light-emitting diode directly connected to the low-temperature poly-silicon layer of the thin-film transistor in order to shorten the distance between two adjacent switching thin-film transistors, increase the number of pixels in a unit area (each inch), and improve the resolution of a panel using the anode connection structure of the organic light-emitting diode.
摘要翻译：本发明提供一种有机发光二极管的阳极连接结构及其制造方法。该结构包括：薄膜晶体管（20）和布置在薄膜晶体管（20）上的有机发光二极管的阳极（40）。薄膜晶体管（20）包括形成在基板（22）上的低温多晶硅层（24），形成在低温多晶硅层（24）上的栅绝缘层（26），形成在栅极绝缘层（26）上的栅极，形成在栅极上的保护层（27）和形成在保护层（27）上的源极/漏极（28）。有机发光二极管的阳极（40）与低温多晶硅层（24）连接。本发明使得有机发光二极管的阳极直接连接到薄膜晶体管的低温多晶硅层，以缩短两个相邻的开关薄膜晶体管之间的距离，增加像素的数量在单位面积（每英寸），并且使用有机发光二极管的阳极连接结构提高面板的分辨率。

6. 发明申请

US20150060860A1 ANODE CONNECTION STRUCTURE OF ORGANIC LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：有机发光二极管的阳极连接结构及其制造方法
公开(公告)号：US20150060860A1
公开(公告)日：2015-03-05
申请号：US14008607
申请日：2013-09-04
申请人： Shenzhen China Star Optoelectronics Technology Co. Ltd.
发明人： Tsungying Yang
IPC分类号： H01L27/32 , H01L29/66 , H01L29/786 , H01L51/52 , H01L51/56
CPC分类号： H01L27/3248 , H01L29/41733 , H01L29/458 , H01L29/78603 , H01L29/78672 , H01L29/78675 , H01L51/5206 , H01L51/56 , H01L2227/323
摘要： The present invention provides an anode connection structure of an organic light-emitting diode and a manufacture method thereof. The structure includes: a thin-film transistor (20) and an anode (40) of an organic light-emitting diode arrange don the thin-film transistor (20). The thin-film transistor (20) includes a low-temperature poly-silicon layer (24) formed on a substrate (22), a gate insulation layer (26) formed on the low-temperature poly-silicon layer (24), a gate formed on the gate insulation layer (26), a protection layer (27) formed on the gate, and a source/drain (28) formed on the protection layer (27). The anode (40) of the organic light-emitting diode is connected to the low-temperature poly-silicon layer (24). The present invention makes the anode of the organic light-emitting diode directly connected to the low-temperature poly-silicon layer of the thin-film transistor in order to shorten the distance between two adjacent switching thin-film transistors, increase the number of pixels in a unit area (each inch), and improve the resolution of a panel using the anode connection structure of the organic light-emitting diode.
摘要翻译：本发明提供一种有机发光二极管的阳极连接结构及其制造方法。该结构包括：薄膜晶体管（20）和布置在薄膜晶体管（20）上的有机发光二极管的阳极（40）。薄膜晶体管（20）包括形成在基板（22）上的低温多晶硅层（24），形成在低温多晶硅层（24）上的栅绝缘层（26），形成在栅极绝缘层（26）上的栅极，形成在栅极上的保护层（27）和形成在保护层（27）上的源极/漏极（28）。有机发光二极管的阳极（40）与低温多晶硅层（24）连接。本发明使得有机发光二极管的阳极直接连接到薄膜晶体管的低温多晶硅层，以缩短两个相邻的开关薄膜晶体管之间的距离，增加像素的数量在单位面积（每英寸），并且使用有机发光二极管的阳极连接结构提高面板的分辨率。

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