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1. 发明授权

US11932936B2 Method for producing a group III compound crystal by hydride vapor phase epitaxy on a seed substrate formed on a group III nitride base substrate 有权
公开(公告)号：US11932936B2
公开(公告)日：2024-03-19
申请号：US17628745
申请日：2020-06-16
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Yoshihiro Kubota , Kazutoshi Nagata
IPC分类号： C30B25/18 , C23C16/34 , C30B29/38
CPC分类号： C23C16/34 , C30B25/18 , C30B29/38
摘要： The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.

2. 发明授权

US11361969B2 Device substrate with high thermal conductivity and method of manufacturing the same 有权
公开(公告)号：US11361969B2
公开(公告)日：2022-06-14
申请号：US16626154
申请日：2018-07-10
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Yoshihiro Kubota , Shigeru Konishi
IPC分类号： H01L21/20 , H01L21/02 , H01L21/304 , H01L21/762 , H01L27/12
摘要： Provided are a device substrate with high thermal conductivity, with high heat dissipation, and with a small loss at high frequencies, and a method of manufacturing the device substrate. A device substrate 1 of the present invention can be manufactured by: provisionally bonding a Si device layer side of an SOI device substrate 10 to a support substrate 20 using a provisional bonding adhesive 31, the SOI device substrate including a Si base substrate 11, a buried layer 12 formed on the Si base substrate, having high thermal conductivity, and being an electrical insulator, and a Si device layer 13 formed on the buried layer; removing the Si base substrate 11 of the provisionally bonded SOI device substrate until the buried layer is exposed, thereby obtaining a thinned device wafer 10a; transfer-bonding the buried layer side of the thinned device wafer and a transfer substrate 40 to each other using a transfer adhesive 32 having a heat-resistant temperature of at least 150° C. by applying heat and pressure, the transfer substrate having high thermal conductivity and being an electrical insulator; and separating the support substrate 20.

3. 发明授权

US10781104B2 Composite substrate, method for forming nanocarbon film, and nanocarbon film 有权
公开(公告)号：US10781104B2
公开(公告)日：2020-09-22
申请号：US15534652
申请日：2015-12-16
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shoji Akiyama , Yoshihiro Kubota , Makoto Kawai , Shigeru Konishi , Hiroshi Mogi
IPC分类号： C01B32/184 , C01B32/956 , H01L21/265 , H01L29/06 , B32B15/04 , H01L21/02 , B32B9/00 , C01B32/05 , B32B9/04 , B32B37/18 , B32B38/00 , C30B29/36 , H01L29/16 , H01L29/34 , B82Y30/00 , B82Y40/00
摘要： Provided is a composite substrate which is provided with: a single crystal silicon carbide thin film 11 having a thickness of 1μm or less; a handle substrate 12 which supports the single crystal silicon carbide thin film 11 and is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100° C.; and an intervening layer 13 which has a thickness of 1μm or less and is arranged between the single crystal silicon carbide thin film 11 and the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.

4. 发明申请

US20200149189A1 SiC COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SAME 审中-公开
公开(公告)号：US20200149189A1
公开(公告)日：2020-05-14
申请号：US16743476
申请日：2020-01-15
申请人： Shin-Etsu Chemical Co., Ltd. , CUSIC INC.
发明人： Yoshihiro Kubota , Shoji Akiyama , Hiroyuki Nagasawa
IPC分类号： C30B33/06 , H01L29/16 , H01L29/06 , H01L21/02 , C30B29/36 , C30B25/18 , C23C16/32 , C23C16/01 , H01L21/18 , H01L21/304 , H01L21/762 , C23C16/42 , H01L21/265
摘要： Provided is an SiC composite substrate 10 having a monocrystalline SiC layer 12 on a polycrystalline SiC substrate 11, wherein: some or all of the interface at which the polycrystalline SiC substrate 11 and the monocrystalline SiC layer 12 are in contact is an unmatched interface I12/11 that is not lattice-matched; the monocrystalline SiC layer 12 has a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate 11, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane 11p) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrate 11 is randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer 12. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.

5. 发明申请

US20190382918A1 SILICON CARBIDE SUBSTRATE PRODUCTION METHOD AND SILICON CARBIDE SUBSTRATE 审中-公开
公开(公告)号：US20190382918A1
公开(公告)日：2019-12-19
申请号：US16489814
申请日：2018-03-01
申请人： Shin-Etsu Chemical Co., Ltd. , CUSIC Inc.
发明人： Hiroyuki Nagasawa , Yoshihiro Kubota , Shoji Akiyama
IPC分类号： C30B29/36 , H01L21/02 , H01L21/683 , H01L29/16 , C30B25/18 , C30B33/10
摘要： A silicon carbide substrate production method includes: the step of providing covering layers 1b, 1b, each containing silicon oxide, silicon nitride, silicon carbonitride, or silicide, respectively on both surfaces of a base material substrate 1a carbon, silicon or silicon carbide, and turning the surface of each of the covering layers 1b, 1b into a smooth surface to prepare a support substrate 1; a step of forming a polycrystalline silicon carbide film 10 on both surfaces of the support substrate 1 by a gas phase growth method or a liquid phase growth method; and a step of separating the polycrystalline silicon carbide films from the support substrate while preserving, on the surface thereof, the smoothness of the covering layer surfaces 1b, 1b by chemically removing at least the covering layers 1b, 1b, from the support substrate 1. The silicon carbide substrate has a smooth surface and reduced internal stress.

6. 发明申请

US20180251911A1 SiC COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SAME 审中-公开
公开(公告)号：US20180251911A1
公开(公告)日：2018-09-06
申请号：US15759376
申请日：2016-09-08
申请人： SHIN-ETSU CHEMICAL CO., LTD. , CUSIC INC.
发明人： Yoshihiro Kubota , Shoji Akiyama , Hiroyuki Nagasawa
IPC分类号： C30B33/06 , C23C16/01 , C23C16/32 , C30B25/18 , C30B29/36 , H01L29/06 , H01L29/16 , H01L21/02
摘要： Provided is an SiC composite substrate 10 having a monocrystalline SiC layer 12 on a polycrystalline SiC substrate 11, wherein: some or all of the interface at which the polycrystalline SiC substrate 11 and the monocrystalline SiC layer 12 are in contact is an unmatched interface I12/11 that is not lattice-matched; the monocrystalline SiC layer 12 has a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate 11, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane 11p) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrate 11 is randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer 12. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.

7. 发明授权

US09837301B2 Method for producing hybrid substrates, and hybrid substrate 有权
公开(公告)号：US09837301B2
公开(公告)日：2017-12-05
申请号：US14416724
申请日：2013-07-18
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shigeru Konishi , Yoshihiro Kubota
IPC分类号： H01L21/336 , H01L21/762
CPC分类号： H01L21/76254
摘要： A method for producing hybrid substrates which can be incorporated into a semiconductor production line involves: forming an ion-injection region (3) by injecting ions from the surface of a silicon substrate (1); adhering the ion-injection surface of the silicon substrate and the surface of a sapphire substrate (4) to one another directly or with an insulating film (2) interposed therebetween; and then obtaining a hybrid substrate (8) having a silicon thin-film (semiconductor layer; 6) on the sapphire substrate (4), by detaching the silicon substrate (1) in the ion-injection region (3). This method is characterized in that the adhering to the silicon substrate (1) occurs after the sapphire substrate (4) is heat-treated in advance in a reducing atmosphere.

8. 发明授权

US09646873B2 Method for producing SOS substrates, and SOS substrate 有权
公开(公告)号：US09646873B2
公开(公告)日：2017-05-09
申请号：US14416759
申请日：2013-07-18
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shigeru Konishi , Yoshihiro Kubota , Makoto Kawai , Shoji Akiyama , Kazutoshi Nagata
IPC分类号： H01L21/762 , H01L21/86 , H01L29/786
CPC分类号： H01L21/76254 , H01L21/86 , H01L29/78657
摘要： A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region (3) by injecting ions from the surface of a silicon substrate (1); adhering the ion-injection surface of the silicon substrate (1) and the surface of a sapphire substrate (4) to one another directly or with an insulating film (2) interposed therebetween; and then obtaining an SOS substrate (8) having a silicon layer (6) on the sapphire substrate (4), by detaching the silicon substrate in the ion-injection region (3). This method is characterized in that the orientation of the sapphire substrate (4) is a C-plane having an off-angle of 1 degree or less.

9. 发明申请

US20150179506A1 METHOD FOR PRODUCING SOS SUBSTRATES, AND SOS SUBSTRATE 有权
标题翻译：用于生产基体的方法和基底
公开(公告)号：US20150179506A1
公开(公告)日：2015-06-25
申请号：US14416759
申请日：2013-07-18
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shigeru Konishi , Yoshihiro Kubota , Makoto Kawai , Shoji Akiyama , Kazutoshi Nagata
IPC分类号： H01L21/762 , H01L21/86
CPC分类号： H01L21/76254 , H01L21/86 , H01L29/78657
摘要： A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region (3) by injecting ions from the surface of a silicon substrate (1); adhering the ion-injection surface of the silicon substrate (1) and the surface of a sapphire substrate (4) to one another directly or with an insulating film (2) interposed therebetween; and then obtaining an SOS substrate (8) having a silicon layer (6) on the sapphire substrate (4), by detaching the silicon substrate in the ion-injection region (3). This method is characterized in that the orientation of the sapphire substrate (4) is a C-plane having an off-angle of 1 degree or less.
摘要翻译：一种可以并入半导体生产线中的SOS衬底的制造方法，能够生产缺陷少，缺陷不变的SOS衬底，高度可重现的方法，或换句话说，生产SOS的方法基板：通过从硅衬底（1）的表面注入离子形成离子注入区域（3）; 将硅衬底（1）的离子注入表面和蓝宝石衬底（4）的表面直接或绝缘膜（2）彼此粘合; 然后通过分离离子注入区域（3）中的硅衬底，获得在蓝宝石衬底（4）上具有硅层（6）的SOS衬底（8）。该方法的特征在于，蓝宝石基板（4）的取向为偏角为1度以下的C面。

10. 发明授权

US11177123B2 Compound semiconductor laminate substrate, method for manufacturing same, and semiconductor element 有权
公开(公告)号：US11177123B2
公开(公告)日：2021-11-16
申请号：US16484285
申请日：2018-02-15
申请人： Shin-Etsu Chemical Co., Ltd. , CUSIC INC.
发明人： Hiroyuki Nagasawa , Yoshihiro Kubota , Shoji Akiyama
IPC分类号： H01L21/02 , H01L29/04 , H01L29/16 , H01L29/20
摘要： A compound semiconductor laminate substrate comprising two single-crystalline compound semiconductor substrates directly bonded together and laminated, the single-crystalline compound semiconductor substrates having the same composition including A and B as constituent elements and having the same atomic arrangement, characterized in that the front and back surfaces of the laminate substrate are polar faces comprising the same kind of atoms of A or B, and that a laminate interface comprises a bond of atoms of either B or A and is a unipolar anti-phase region boundary plane in which the crystal lattices of the atoms are matched. In this way, the polar faces of the front and rear surfaces of the compound semiconductor laminate substrate are made monopolar, thereby facilitating semiconductor element process designing, and making it possible to manufacture a low-cost, high-performance, and stable semiconductor element without implementing complex substrate processing.

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