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1. 发明授权

US08912546B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08912546B2
公开(公告)日：2014-12-16
申请号：US12360551
申请日：2009-01-27
申请人： Shinji Maekawa
发明人： Shinji Maekawa
IPC分类号： H01L29/04 , H01L31/036 , H01L23/48 , H01L27/12
CPC分类号： H01L27/1214 , H01L27/1292
摘要： The present invention provides a technique by which a component forming a display device, such as a wiring can be formed with good adhesion.In the invention, a component forming a thin film transistor, a display device, or the like is formed with a material which is the same as at least one of the substances forming the formation subject surface added (mixed); thus, adhesion between the component and the formation subject is improved. An insulating layer formed over the component is formed with a laminate of a first insulating layer containing an organic material and a second insulating layer containing an inorganic material; thus, the insulating layer sufficiently covers irregularities on the surface of the component, and is also dense enough so as to be reliable as an insulating layer.
摘要翻译：本发明提供一种技术，通过该技术可以形成具有良好粘附性的形成诸如布线的显示装置的部件。在本发明中，形成薄膜晶体管，显示装置等的部件形成为与形成被加工物（混合）的至少一种物质相同的材料。从而提高了组分与形成对象之间的粘合性。形成在所述部件上的绝缘层由具有含有有机材料的第一绝缘层和含有无机材料的第二绝缘层的叠层形成; 因此，绝缘层充分地覆盖部件表面上的凹凸，并且也足够密实，以便作为绝缘层是可靠的。

2. 发明授权

US08535965B2 Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film 有权
标题翻译：氮化硅膜，半导体器件，显示器件和氮化硅膜的制造方法
公开(公告)号：US08535965B2
公开(公告)日：2013-09-17
申请号：US13540259
申请日：2012-07-02
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L23/58
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的屏障特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，在沉积中将硅烷（SiH4），氮（N2）和稀有气体引入淀积室中，反应压力在0.01托至0.1托的范围内。

3. 发明申请

US20120056550A1 DISPLAY DEVICE 有权
公开(公告)号：US20120056550A1
公开(公告)日：2012-03-08
申请号：US13293762
申请日：2011-11-10
申请人： Yasunori YOSHIDA , Hajime Kimura , Shinji Maekawa , Osamu Nakamura , Shunpei Yamazaki
发明人： Yasunori YOSHIDA , Hajime Kimura , Shinji Maekawa , Osamu Nakamura , Shunpei Yamazaki
IPC分类号： H05B37/02
CPC分类号： H01L27/156 , H01L21/288 , H01L21/76838 , H01L27/1285 , H01L27/1292 , H01L27/3248 , H01L27/3276
摘要： The invention provides an active matrix EL display device which can perform a clear multi-gray scale color display. In particular, the invention provides a large active matrix EL display device at low cost by a manufacturing method which can selectively form a pattern. Power supply lines in a pixel portion are arranged in matrix by the manufacturing method which can selectively form a pattern. Further, capacitance between wirings is reduced by providing a longer distance between adjacent wirings by the manufacturing method which can selectively form a pattern.

4. 发明授权

US08003420B2 Display device provided with semiconductor element and manufacturing method thereof, and electronic device installed with display device provided with semiconductor element 有权
标题翻译：具有半导体元件的显示装置及其制造方法以及安装有设置有半导体元件的显示装置的电子装置
公开(公告)号：US08003420B2
公开(公告)日：2011-08-23
申请号：US12834048
申请日：2010-07-12
申请人： Shinji Maekawa
发明人： Shinji Maekawa
IPC分类号： H01L21/336
CPC分类号： H01L51/0022 , G02F2001/136295 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/41733 , H01L29/66765 , H01L29/78678 , H01L29/78696 , H01L51/102
摘要： According to one feature of the invention, a region of an insulating film surface at least overlapped with a part of a gate electrode or wiring is coated with an organic agent; a fluid in which conductive fine particles are dispersed in an organic solvent is discharged by a droplet discharging method in the insulating film surface ranging from a region where the organic agent is coated and left to a region where the organic agent is not coated. The organic agent is coated to improve wettability of the fluid in the insulating film surface, and one of each ends of the source electrode and the drain electrode adjacent to each other by interposing the curve therebetween is formed by being curved in a concave and the other end is formed by being curved in a convex.
摘要翻译：根据本发明的一个特征，至少与栅电极或布线的一部分重叠的绝缘膜表面的区域被涂覆有机物; 将导电性细颗粒分散在有机溶剂中的流体通过液滴排放法在绝缘膜表面排出，范围从有机试剂被涂覆的区域到有机试剂未被涂覆的区域。涂覆有机试剂以改善绝缘膜表面中的流体的润湿性，并且通过插入其间的曲线彼此相邻的源电极和漏电极的每个端部中的一个通过弯曲成凹入而形成，而另一个端部通过弯曲成凸形而形成。

5. 发明授权

US07863114B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07863114B2
公开(公告)日：2011-01-04
申请号：US11971085
申请日：2008-01-08
申请人： Shinji Maekawa , Hidekazu Miyairi
发明人： Shinji Maekawa , Hidekazu Miyairi
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L21/2026 , H01L21/268 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78609 , H01L29/78675
摘要： The present invention provides a method for removing a metal element effectively from a crystalline semiconductor film obtained with the use of the metal element, without increasing the number of processes. In the present invention, an amorphous semiconductor film is formed on an insulating surface, a metal element for promoting crystallization is added to the amorphous semiconductor film, the amorphous semiconductor film is heated to form a crystallized semiconductor film, a continuous wave laser beam is irradiated to the crystallized semiconductor film, and an upper portion of the crystallized semiconductor film is removed.
摘要翻译：本发明提供一种从不使用金属元素而获得的结晶半导体膜有效地去除金属元素的方法。在本发明中，在绝缘面上形成非晶半导体膜，在非晶半导体膜上添加用于促进结晶的金属元素，将非晶半导体膜加热形成结晶化的半导体膜，照射连续波激光结晶化的半导体膜，去除结晶化半导体膜的上部。

6. 发明申请

US20100236480A1 RAW MATERIAL GAS SUPPLY SYSTEM AND FILM FORMING APPARATUS 审中-公开
标题翻译：原料气供应系统和薄膜成型设备
公开(公告)号：US20100236480A1
公开(公告)日：2010-09-23
申请号：US12680041
申请日：2008-09-22
申请人： Masamichi Hara , Atsushi Gomi , Shinji Maekawa , Kaoru Yamamoto , Satoshi Taga
发明人： Masamichi Hara , Atsushi Gomi , Shinji Maekawa , Kaoru Yamamoto , Satoshi Taga
IPC分类号： C23C16/54 , F15D1/00
CPC分类号： C23C16/4481 , Y10T137/8158 , Y10T137/8376
摘要： A raw material gas supply system (6) supplies a raw material gas to a gas use system (2) kept in a reduced pressure atmosphere. The system includes: a raw material tank (40) for storing a liquid raw material or a solid raw material; a raw material conduit (46) connected at one end to the raw material tank and connected at the other end to the gas use system; a carrier gas supply mechanism (54), connected to the raw material tank, for supplying a carrier gas into the raw material tank while controlling the flow rate of the gas; on-off valves (48, 50) interposed in the raw material conduit; a heater (64) for heating the raw material conduit and the on-off valves; and a temperature control device (92) for controlling the heater, wherein the raw material conduit and the on-off valves are each formed of a metal material having good thermal conductivity.
摘要翻译：原料气体供给系统（6）向保持在减压气氛中的气体使用系统（2）供给原料气体。该系统包括：原料罐（40），用于储存液体原料或固体原料; 原料管道（46），其一端连接到原料罐，并在另一端连接到气体使用系统; 连接到原料罐的载气供给机构（54），用于在控制气体的流量的同时向载体气体供给载气; 开闭阀（48,50）插入在原料管道中; 用于加热原料管道和开关阀的加热器（64）; 以及用于控制加热器的温度控制装置（92），其中原料管道和开关阀均由具有良好导热性的金属材料形成。

7. 发明授权

US07800113B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07800113B2
公开(公告)日：2010-09-21
申请号：US11826815
申请日：2007-07-18
申请人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
发明人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L51/56 , H01L27/1277 , H01L27/1292 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L29/42384 , H01L29/458 , H01L29/66757 , H01L29/78675 , H01L29/78696 , H01L51/0005 , H01L51/524 , H01L51/5253 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323 , Y02P80/30
摘要： The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.
摘要翻译：本发明提供了一种用于制造具有TFT的显示装置的方法，所述显示装置可以在使用少量光掩模的情况下高速运转并且提高难以改变阈值的材料的利用效率。在本发明中，将催化元件施加到非晶半导体膜上，并加热非晶半导体膜以形成结晶半导体膜。在从晶体半导体膜去除催化元素之后，制造具有平面结构的顶栅型薄膜晶体管。此外，通过使用选择性地形成显示装置的元件的液滴喷射方法，可以简化该过程，并且可以减少材料的损失。

8. 发明申请

US20100210115A1 SUBSTRATE MOUNTING MECHANISM, SUBSTRATE PROCESSING APPARATUS, METHOD FOR SUPPRESSING FILM DEPOSITION ON SUBSTRATE MOUNTING MECHANISM, AND STORAGE MEDIUM 审中-公开
标题翻译：基板安装机构，基板加工装置，用于抑制基板安装机构上的膜沉积的方法和存储介质
公开(公告)号：US20100210115A1
公开(公告)日：2010-08-19
申请号：US12722193
申请日：2010-03-11
申请人： Masamichi HARA , Atsushi Gomi , Shinji Maekawa , Satoshi Taga , Kaoru Yamamoto
发明人： Masamichi HARA , Atsushi Gomi , Shinji Maekawa , Satoshi Taga , Kaoru Yamamoto
IPC分类号： H01L21/477 , H05B3/68
CPC分类号： H01L21/67103 , C23C16/4586 , C23C16/52 , H01L21/67109
摘要： A substrate mounting mechanism on which a target substrate is placed is provided. The substrate mounting mechanism includes a heater plate, which has a substrate mounting surface on which the target substrate is placed and has a heater embedded therein to heat the substrate to a deposition temperature at which a film is deposited. The substrate mounting mechanism also includes a temperature control jacket, which is formed to cover at least a surface of the heater plate other than the substrate mounting surface and adjusts the temperature to a non-deposition temperature below the deposition temperature.
摘要翻译：设置放置目标基板的基板安装机构。基板安装机构包括加热板，该加热板具有放置目标基板的基板安装表面，并且嵌入有加热器，以将基板加热到沉积膜的沉积温度。衬底安装机构还包括温度控制护套，其形成为覆盖加热器板的除了衬底安装表面之外的至少一个表面，并将温度调节到低于沉积温度的非沉积温度。

9. 发明授权

US07727854B2 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07727854B2
公开(公告)日：2010-06-01
申请号：US10573155
申请日：2004-12-14
申请人： Shinji Maekawa , Gen Fujii , Junya Maruyama , Toru Takayama , Yumiko Fukumoto , Yasuyuki Arai
发明人： Shinji Maekawa , Gen Fujii , Junya Maruyama , Toru Takayama , Yumiko Fukumoto , Yasuyuki Arai
IPC分类号： H01L21/76
CPC分类号： G06K19/07749 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78684
摘要： An IC card is more expensive than a magnetic card, and an electronic tag is also more expensive as a substitute for bar codes. Therefore, the present invention provides an extremely thin integrated circuit that can be mass-produced at low cost unlike a chip of a conventional silicon wafer, and a manufacturing method thereof. One feature of the present invention is that a thin integrated circuit is formed by a formation method that can form a pattern selectively, on a glass substrate, a quartz substrate, a stainless substrate, a substrate made of synthetic resin having flexibility, such as acryl, or the like except for a bulk substrate. Further, another feature of the present invention is that an ID chip in which a thin film integrated circuit and an antenna according to the present invention are mounted is formed.
摘要翻译： IC卡比磁卡贵，电子标签也更昂贵代替条形码。因此，本发明提供了与常规硅晶片的芯片相比可以以低成本批量生产的极薄的集成电路及其制造方法。本发明的一个特征在于，通过可以在玻璃基板，石英基板，不锈钢基板，具有柔软性的合成树脂制成的基板（例如丙烯酸酯）上形成图案的形成方法形成薄的集成电路，或类似物，除了大量衬底。此外，本发明的另一个特征是形成其中安装有根据本发明的薄膜集成电路和天线的ID芯片。

10. 发明授权

US07696100B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07696100B2
公开(公告)日：2010-04-13
申请号：US11132288
申请日：2005-05-19
申请人： Shinji Maekawa
发明人： Shinji Maekawa
IPC分类号： H01L21/265
CPC分类号： H01L27/1288 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/32139 , H01L27/1214
摘要： A manufacturing method of a semiconductor device of which cost can be suppressed by using a nanoimprinting method is provided. In the invention, a gate insulating film, a conductive film, and a resist are formed in sequence over a semiconductor film and a resist is hardened while pressing a mold formed with a pattern to the resist. Therefore, the pattern is transferred to the resist, the surface of the resist to which the pattern is transferred is ashed until a part of the conductive film is exposed, the resist having the ashed surface is used a mask, and the conductive film is etched.
摘要翻译：提供了可以通过使用纳米压印方法抑制成本的半导体器件的制造方法。在本发明中，在半导体膜上顺序地形成栅极绝缘膜，导电膜和抗蚀剂，并且在将形成有图案的模具压在抗蚀剂上的同时使抗蚀剂硬化。因此，将图案转印到抗蚀剂上，将图案转印的抗蚀剂的表面灰化直到导电膜的一部分露出，将具有灰色表面的抗蚀剂用于掩模，并且导电膜被蚀刻。

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