专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08339562B2 Electro-optical device and method for manufacturing the same 失效
公开(公告)号：US08339562B2
公开(公告)日：2012-12-25
申请号：US12582762
申请日：2009-10-21
申请人： Shunpei Yamazaki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： G02F1/1345 , G02F1/1368
CPC分类号： H01L29/4908 , H01L27/1255 , H01L29/42384 , H01L2224/48091 , H01L2224/48464 , H01L2224/73204 , H01L2924/00014
摘要： Using thin film transistors (TFTs), an active matrix circuit, a driver circuit for driving the active matrix circuit or the like are formed on one substrate. Circuits such as a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single crystalline semiconductor integrated circuit chips. After the semiconductor integrated circuit chips are adhered to the substrate, the chips are connected with wirings formed on the substrate by a chip on glass (COG) method, a wire bonding method or the like, to manufacture the electric device having a liquid crystal display (LCD) on one substrate.

2. 发明申请

US20120241739A1 FIELD-EFFECT TRANSISTOR, AND MEMORY AND SEMICONDUCTOR CIRCUIT INCLUDING THE SAME 有权
标题翻译：场效应晶体管，以及包括其的存储器和半导体电路
公开(公告)号：US20120241739A1
公开(公告)日：2012-09-27
申请号：US13428008
申请日：2012-03-23
申请人： Shunpei Yamazaki , Hiromichi Godo , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Hiromichi Godo , Yasuhiko Takemura
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L27/0688 , H01L27/108 , H01L27/10805 , H01L27/10826 , H01L27/10852 , H01L27/10879 , H01L27/10894 , H01L27/10897 , H01L27/1156 , H01L27/1203 , H01L27/1225 , H01L28/90 , H01L29/41733 , H01L29/785 , H01L29/78609
摘要： Provided is a field-effect transistor (FET) having small off-state current, which is used in a miniaturized semiconductor integrated circuit. The field-effect transistor includes a thin oxide semiconductor which is formed substantially perpendicular to an insulating surface and has a thickness of greater than or equal to 1 nm and less than or equal to 30 nm, a gate insulating film formed to cover the oxide semiconductor, and a strip-like gate which is formed to cover the gate insulating film and has a width of greater than or equal to 10 nm and less than or equal to 100 nm. In this structure, three surfaces of the thin oxide semiconductor are covered with the gate, so that electrons injected from a source or a drain can be effectively removed, and most of the space between the source and the drain can be a depletion region; thus, off-state current can be reduced.
摘要翻译：提供了一种具有小截止电流的场效应晶体管（FET），其用于小型化的半导体集成电路中。场效应晶体管包括形成为基本上垂直于绝缘表面并且具有大于或等于1nm且小于或等于30nm的厚度的薄氧化物半导体，形成为覆盖氧化物半导体的栅极绝缘膜以及形成为覆盖栅极绝缘膜并且具有大于或等于10nm且小于或等于100nm的宽度的条状栅极。在这种结构中，薄氧化物半导体的三个表面被栅极覆盖，使得可以有效地去除从源极或漏极注入的电子，并且源极和漏极之间的大部分空间可以是耗尽区; 因此，可以减小截止电流。

3. 发明申请

US20120182790A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20120182790A1
公开(公告)日：2012-07-19
申请号：US13344921
申请日：2012-01-06
申请人： Shunpei Yamazaki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： G11C11/24
CPC分类号： H01L27/10808 , G11C5/10 , G11C11/401 , G11C11/4085 , H01L21/84 , H01L23/528 , H01L23/53228 , H01L27/0688 , H01L27/10805 , H01L27/10873 , H01L27/10882 , H01L27/10897 , H01L27/1207 , H01L28/91 , H01L29/7869
摘要： The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer. That is, the memory cell array overlaps with the driver circuit. Accordingly, the integration degree of the semiconductor memory device can be increased as compared to the case where a driver circuit and a memory cell array are provided in the same plane of a substrate containing a singe crystal semiconductor material.
摘要翻译： DRAM的存储器容量增强。半导体存储器件包括：驱动器电路，其包括单晶半导体衬底的一部分，设置在驱动电路上的多层布线层;以及设置在多层布线层上的存储单元阵列层。也就是说，存储单元阵列与驱动电路重叠。因此，与在含有单晶体半导体材料的基板的同一平面上设置驱动电路和存储单元阵列的情况相比，可以提高半导体存储器件的集成度。

4. 发明申请

US20120113345A1 Display Device and Method of Fabricating the Same 失效
标题翻译：显示装置及其制作方法
公开(公告)号：US20120113345A1
公开(公告)日：2012-05-10
申请号：US13224395
申请日：2011-09-02
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： G02F1/136 , G02F1/1333
CPC分类号： G02F1/13452 , G02F1/1303 , G02F1/133305 , G02F1/1345 , G02F1/13454 , H01L21/67132 , H01L2221/68363 , H01L2224/16 , H01L2924/01079
摘要： A driver circuit for use with a passive matrix or active matrix electro-optical display device such as a liquid crystal display is fabricated to occupy a reduced area. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. The driver circuit can be formed on a large-area substrate such as a glass substrate, while the display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate.
摘要翻译：制造用于诸如液晶显示器的无源矩阵或有源矩阵电光显示装置的驱动电路以占据减小的面积。使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。随后，驱动电路的基板被去除。驱动电路可以形成在诸如玻璃基板的大面积基板上，而显示装置可以形成在具有高抗震性的轻质材料如塑料基板上。

5. 发明授权

US07952097B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07952097B2
公开(公告)日：2011-05-31
申请号：US09917633
申请日：2001-07-31
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/78654 , H01L29/78675
摘要： A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.
摘要翻译：通过控制其结晶度来提高薄膜晶体管的可靠性和产率的方法。该方法包括以下步骤：在岛状非晶硅膜上形成栅电极，使用栅电极作为掩模注入杂质，形成含有镍，铁，钴，铂和钯中的至少一种的涂膜，使其粘附到部分杂质区域，并在低于纯非晶硅的结晶温度的温度下进行退火以促进从其开始的结晶，并使杂质区域和沟道形成区域结晶。

6. 发明授权

US07812894B2 Electro-optical device and method for manufacturing the same 有权
标题翻译：电光装置及其制造方法
公开(公告)号：US07812894B2
公开(公告)日：2010-10-12
申请号：US12498520
申请日：2009-07-07
申请人： Shunpei Yamazaki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： G02F1/1368 , G02F1/1345 , H01L27/12
CPC分类号： H01L29/4908 , H01L27/1255 , H01L29/42384 , H01L2224/48091 , H01L2224/48464 , H01L2224/73204 , H01L2924/00014
摘要： Using thin film transistors (TFTs), an active matrix circuit, a driver circuit for driving the active matrix circuit or the like are formed on one substrate. Circuits such as a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single crystalline semiconductor integrated circuit chips. After the semiconductor integrated circuit chips are adhered to the substrate, the chips are connected with wirings formed on the substrate by a chip on glass (COG) method, a wire bonding method or the like, to manufacture the electric device having a liquid crystal display (LCD) on one substrate.
摘要翻译：使用薄膜晶体管（TFT），有源矩阵电路，用于驱动有源矩阵电路的驱动电路等形成在一个基板上。使用单晶半导体集成电路芯片形成驱动电气设备所必需的诸如中央处理单元（CPU）和存储器的电路。在将半导体集成电路芯片粘附到基板之后，芯片通过玻璃（COG）法，引线接合方法等与形成在基板上的布线连接，以制造具有液晶显示器的电气设备（LCD）在一个基板上。

7. 发明授权

US07446843B2 Display device and method of fabricating the same 失效
标题翻译：显示装置及其制造方法
公开(公告)号：US07446843B2
公开(公告)日：2008-11-04
申请号：US11776683
申请日：2007-07-12
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： G02F1/1345
CPC分类号： G02F1/13452 , G02F1/1303 , G02F1/133305 , G02F1/1345 , G02F1/13454 , H01L21/67132 , H01L2221/68363 , H01L2224/16 , H01L2924/01079
摘要： A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained.
摘要翻译：一种制造用于无源矩阵或有源矩阵电光显示装置如液晶显示器的驱动电路的方法。驱动电路占用的空间比以前少。使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。随后，驱动电路的基板被去除。这使得电路的配置比TAB方法或COG方法所要求的电路的配置简单得多，因为导线不是以复杂的方式铺设。驱动电路可以形成在诸如玻璃基板的大面积基板上。显示装置可以形成在具有高抗冲击性的轻质材料上，例如塑料基板。因此，可以获得具有优异便携性的显示装置。

8. 发明授权

US07253437B2 Display device having a thin film transistor 失效
标题翻译：具有薄膜晶体管的显示装置
公开(公告)号：US07253437B2
公开(公告)日：2007-08-07
申请号：US11017869
申请日：2004-12-22
申请人： Shunpei Yamazaki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78609 , H01L21/26506 , H01L21/823814 , H01L27/1214 , H01L29/0847 , H01L29/167 , H01L29/6659 , H01L29/66757 , H01L29/7833 , H01L29/78618 , H01L29/78621 , H01L29/78675 , H01L29/78684 , H01L29/78696
摘要： A semiconductor device and a method for forming the same are disclosed. The semiconductor device comprising an insulated gate field effect transistor provided with a region having added thereto an element at least one selected from the group consisting of carbon, nitrogen, and oxygen, said region having established at either or both of the vicinity of the boundary between the drain and the semiconductor layer under the gate electrode and the vicinity of the boundary between the source and the semiconductor layer under the gate electrode for example by ion implantation using a mask. It is free from the problems of reverse leakage between the source and the drain, and of throw leakage which occurs even at a voltage below the threshold ascribed to the low voltage resistance between the source and the drain.
摘要翻译：公开了半导体器件及其形成方法。该半导体器件包括绝缘栅场效应晶体管，该晶体管具有向其中添加了选自碳，氮和氧的组中的至少一种的元素的区域，所述区域建立在碳，氮和氧之间的边界附近的一个或两个附近漏极和半导体层以及栅电极下的源极和半导体层之间的边界附近，例如通过使用掩模的离子注入。在源极和漏极之间的低电压电阻下，即使在低于阈值的电压下也可以产生漏极和漏极之间的泄漏问题。

9. 发明申请

US20070096210A1 Semiconductor device and method of forming the same 失效
标题翻译：半导体器件及其形成方法
公开(公告)号：US20070096210A1
公开(公告)日：2007-05-03
申请号：US11594759
申请日：2006-11-09
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
IPC分类号： H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L27/1274 , G02F1/13454 , G02F2001/136245 , H01L21/8213 , H01L29/02 , H01L29/78603 , H01L29/78675 , H01L29/78687 , H01L29/78696
摘要： An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or a semi-amorphous semiconductor material; and a region provided under said channel region, said region comprising an amorphous material containing the same material as that of the channel region as the principal component, or said region comprising a material having a band gap larger than said channel region. A process for fabricating the device is also disclosed.
摘要翻译：一种绝缘栅极半导体器件，包括其上设置有源极和漏极区域的绝缘体衬底; 沟道区域并入所述源极和所述漏极区域之间，所述沟道区域包括多晶，单晶或半非晶半导体材料; 以及设置在所述沟道区下面的区域，所述区域包含含有与作为主要成分的沟道区相同的材料的非晶材料，或者所述区域包括具有比所述沟道区大的带隙的材料。还公开了一种用于制造该器件的工艺。

10. 发明授权

US07148542B2 Semiconductor device and method of forming the same 失效
标题翻译：半导体器件及其形成方法
公开(公告)号：US07148542B2
公开(公告)日：2006-12-12
申请号：US10805327
申请日：2004-03-22
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
IPC分类号： H01L27/01
CPC分类号： H01L27/1274 , G02F1/13454 , G02F2001/136245 , H01L21/8213 , H01L29/02 , H01L29/78603 , H01L29/78675 , H01L29/78687 , H01L29/78696
摘要： An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or a semi-amorphous semiconductor material; and a region provided under said channel region, said region comprising an amorphous material containing the same material as that of the channel region as the principal component, or said region comprising a material having a band gap larger than said channel region.A process for fabricating the device is also disclosed.
摘要翻译：一种绝缘栅极半导体器件，包括其上设置有源极和漏极区域的绝缘体衬底; 沟道区域并入所述源极和所述漏极区域之间，所述沟道区域包括多晶，单晶或半非晶半导体材料; 以及设置在所述沟道区下面的区域，所述区域包含含有与作为主要成分的沟道区相同的材料的非晶材料，或者所述区域包括具有比所述沟道区大的带隙的材料。还公开了一种用于制造该器件的工艺。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式