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1. 发明申请

US20180158774A1 FABRICATION METHOD OF SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：US20180158774A1
公开(公告)日：2018-06-07
申请号：US15867199
申请日：2018-01-10
申请人： Siliconware Precision Industries Co., Ltd.
发明人： Wei-Che Chang
IPC分类号： H01L23/522 , H01L21/768 , H01L23/532
CPC分类号： H01L23/5226 , H01L21/76802 , H01L21/76807 , H01L21/7681 , H01L21/76831 , H01L23/53295 , H01L2221/1031 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/0002 , H01L2924/15311 , H01L2924/00
摘要： A method for fabricating a semiconductor substrate is disclosed, which includes: forming a first dielectric layer on a substrate body; foil ling a plurality of first vias penetrating the first dielectric layer to expose portions of the substrate body; forming a second dielectric layer on the first dielectric layer and the exposed portions of the substrate body, wherein the second dielectric layer extends on walls of the first vias; etching the second dielectric layer to form a plurality of openings communicating with the first vias and form a plurality of second vias penetrating the second dielectric layer in the first vias so as to expose portions of the substrate body, leaving the second dielectric layer on the walls of the first vias; and forming a circuit layer in the openings, and forming a plurality of conductive vias in the second vias for electrically connecting the circuit layer and the substrate body.

2. 发明授权

US09899314B2 Semiconductor substrate and fabrication method thereof 有权
公开(公告)号：US09899314B2
公开(公告)日：2018-02-20
申请号：US14477131
申请日：2014-09-04
申请人： Siliconware Precision Industries Co., Ltd.
发明人： Wei-Che Chang
IPC分类号： H01L23/48 , H01L23/522 , H01L21/768 , H01L23/532
CPC分类号： H01L23/5226 , H01L21/76802 , H01L21/76807 , H01L21/7681 , H01L21/76831 , H01L23/53295 , H01L2221/1031 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/0002 , H01L2924/15311 , H01L2924/00
摘要： A method for fabricating a semiconductor substrate is disclosed, which includes: forming a first dielectric layer on a substrate body; forming a plurality of first vias penetrating the first dielectric layer to expose portions of the substrate body; forming a second dielectric layer on the first dielectric layer and the exposed portions of the substrate body, wherein the second dielectric layer extends on walls of the first vias; etching the second dielectric layer to form a plurality of openings communicating with the first vias and form a plurality of second vias penetrating the second dielectric layer in the first vias so as to expose portions of the substrate body, leaving the second dielectric layer on the walls of the first vias; and forming a circuit layer in the openings, and forming a plurality of conductive vias in the second vias for electrically connecting the circuit layer and the substrate body.

3. 发明申请

US20150179517A1 SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体基板及其制造方法
公开(公告)号：US20150179517A1
公开(公告)日：2015-06-25
申请号：US14477131
申请日：2014-09-04
申请人： Siliconware Precision Industries Co., Ltd.
发明人： Wei-Che Chang
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L23/5226 , H01L21/76802 , H01L21/76807 , H01L21/7681 , H01L21/76831 , H01L23/53295 , H01L2221/1031 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/0002 , H01L2924/15311 , H01L2924/00
摘要： A method for fabricating a semiconductor substrate is disclosed, which includes: forming a first dielectric layer on a substrate body; forming a plurality of first vias penetrating the first dielectric layer to expose portions of the substrate body; forming a second dielectric layer on the first dielectric layer and the exposed portions of the substrate body, wherein the second dielectric layer extends on walls of the first vias; etching the second dielectric layer to form a plurality of openings communicating with the first vias and form a plurality of second vias penetrating the second dielectric layer in the first vias so as to expose portions of the substrate body, leaving the second dielectric layer on the walls of the first vias; and forming a circuit layer in the openings, and forming a plurality of conductive vias in the second vias for electrically connecting the circuit layer and the substrate body.
摘要翻译：公开了一种制造半导体衬底的方法，其包括：在衬底主体上形成第一电介质层; 形成穿过所述第一介电层的多个第一通孔以暴露所述基板主体的部分; 在所述第一介电层上形成第二电介质层和所述衬底主体的暴露部分，其中所述第二电介质层在所述第一通孔的壁上延伸; 蚀刻所述第二电介质层以形成与所述第一通孔连通的多个开口，并且形成穿过所述第一通孔中的所述第二电介质层的多个第二通孔，以暴露所述衬底主体的部分，从而将所述第二电介质层留在所述壁的第一个通道; 以及在所述开口中形成电路层，并且在所述第二通孔中形成多个导电通孔，用于电连接所述电路层和所述基板主体。

4. 发明授权

US10403573B2 Fabrication method of semiconductor substrate 有权
公开(公告)号：US10403573B2
公开(公告)日：2019-09-03
申请号：US15867199
申请日：2018-01-10
申请人： Siliconware Precision Industries Co., Ltd.
发明人： Wei-Che Chang
IPC分类号： H01L23/522 , H01L21/768 , H01L23/532
摘要： A method for fabricating a semiconductor substrate is disclosed, which includes: forming a first dielectric layer on a substrate body; foil ling a plurality of first vias penetrating the first dielectric layer to expose portions of the substrate body; forming a second dielectric layer on the first dielectric layer and the exposed portions of the substrate body, wherein the second dielectric layer extends on walls of the first vias; etching the second dielectric layer to form a plurality of openings communicating with the first vias and form a plurality of second vias penetrating the second dielectric layer in the first vias so as to expose portions of the substrate body, leaving the second dielectric layer on the walls of the first vias; and forming a circuit layer in the openings, and forming a plurality of conductive vias in the second vias for electrically connecting the circuit layer and the substrate body.

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