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1. 发明授权

US11594563B2 Image sensor having improved dicing properties 有权
公开(公告)号：US11594563B2
公开(公告)日：2023-02-28
申请号：US17144947
申请日：2021-01-08
申请人： SONY CORPORATION
发明人： Atsushi Yamamoto , Shinji Miyazawa , Yutaka Ooka , Kensaku Maeda , Yusuke Moriya , Naoki Ogawa , Nobutoshi Fujii , Shunsuke Furuse , Masaya Nagata , Yuichi Yamamoto
IPC分类号： H01L27/146 , H01L31/0203
摘要： The present technology relates to techniques of preventing intrusion of moisture into a chip.
Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

2. 发明授权

US11587857B2 Semiconductor device 有权
公开(公告)号：US11587857B2
公开(公告)日：2023-02-21
申请号：US15945579
申请日：2018-04-04
申请人： Sony Corporation
发明人： Nobutoshi Fujii , Yoshihisa Kagawa
IPC分类号： H01L27/146 , H01L23/498 , H01L23/522 , H01L23/00 , H01L25/065 , H01L25/00 , H01L23/532
摘要： A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located closer to the first interlayer insulating film of the second interlayer insulating film, being disposed around the second electrode pad, and being bonded to the first dummy electrode. A second semiconductor device includes: a first semiconductor section including a first electrode, the first electrode being formed on a surface located closer to a bonding interface and extending in a first direction; and a second semiconductor section including a second electrode and disposed to be bonded to the first semiconductor section at the bonding interface, the second electrode being bonded to the first electrode and extending in a second direction that intersects with the first direction.

3. 发明授权

US10985102B2 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus 有权
公开(公告)号：US10985102B2
公开(公告)日：2021-04-20
申请号：US16410877
申请日：2019-05-13
申请人： Sony Corporation
发明人： Yoshihisa Kagawa , Kenichi Aoyagi , Yoshiya Hagimoto , Nobutoshi Fujii
IPC分类号： H01L31/0232 , H01L23/528 , H01L21/768 , H01L27/146 , H01L23/00 , H04N5/369 , H01L23/532 , H01L23/48 , H01L27/06
摘要： Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

4. 发明授权

US10608028B2 Image sensor having improved dicing properties 有权
公开(公告)号：US10608028B2
公开(公告)日：2020-03-31
申请号：US16045973
申请日：2018-07-26
申请人： SONY CORPORATION
发明人： Atsushi Yamamoto , Shinji Miyazawa , Yutaka Ooka , Kensaku Maeda , Yusuke Moriya , Naoki Ogawa , Nobutoshi Fujii , Shunsuke Furuse , Masaya Nagata , Yuichi Yamamoto
IPC分类号： H01L27/00 , H01L31/00 , H01L27/146 , H01L31/0203
摘要： The present technology relates to techniques of preventing intrusion of moisture into a chip.Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

5. 发明申请

US20180277585A1 SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR A SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20180277585A1
公开(公告)日：2018-09-27
申请号：US15992908
申请日：2018-05-30
申请人： Sony Corporation
发明人： Yoshihisa Kagawa , Kenichi Aoyagi , Yoshiya Hagimoto , Nobutoshi Fujii
IPC分类号： H01L27/146 , H01L21/768 , H04N5/369 , H01L23/528 , H01L23/532 , H01L23/00 , H01L27/06 , H01L23/48
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7684 , H01L21/76841 , H01L21/76843 , H01L23/481 , H01L23/528 , H01L23/5283 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/80 , H01L24/83 , H01L27/0688 , H01L27/14609 , H01L27/14621 , H01L27/14625 , H01L27/1464 , H01L27/14645 , H01L27/1469 , H01L2221/1031 , H01L2224/02245 , H01L2224/05027 , H01L2224/0508 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05546 , H01L2224/05547 , H01L2224/05571 , H01L2224/05573 , H01L2224/05578 , H01L2224/05647 , H01L2224/05686 , H01L2224/08121 , H01L2224/08145 , H01L2224/0903 , H01L2224/80011 , H01L2224/80013 , H01L2224/80035 , H01L2224/80091 , H01L2224/80097 , H01L2224/80203 , H01L2224/80345 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2224/80935 , H01L2224/83345 , H01L2924/00014 , H01L2924/053 , H01L2924/12043 , H01L2924/13091 , H04N5/369 , H01L2924/00012 , H01L2924/05442 , H01L2924/05042 , H01L2924/049 , H01L2924/00 , H01L2224/05552
摘要： Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

6. 发明申请

US20180269248A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD 审中-公开
公开(公告)号：US20180269248A1
公开(公告)日：2018-09-20
申请号：US15987278
申请日：2018-05-23
申请人： Sony Corporation
发明人： Nobutoshi Fujii , Yoshiya Hagimoto , Kenichi Aoyagi , Yoshihisa Kagawa
IPC分类号： H01L27/146 , H04N5/225 , H01L21/20 , H01L21/768
摘要： A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

7. 发明申请

US20160141267A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20160141267A1
公开(公告)日：2016-05-19
申请号：US14827883
申请日：2015-08-17
申请人： Sony Corporation
发明人： Yoshiya Hagimoto , Nobutoshi Fujii , Kenichi Aoyagi
IPC分类号： H01L23/00 , H01L23/532 , H01L27/146 , H01L21/768
CPC分类号： H01L24/83 , H01L21/76829 , H01L21/76843 , H01L21/76849 , H01L21/76879 , H01L21/76885 , H01L23/498 , H01L23/49866 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/32 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/1469 , H01L2224/03845 , H01L2224/05026 , H01L2224/05147 , H01L2224/05562 , H01L2224/05666 , H01L2224/05681 , H01L2224/081 , H01L2224/08147 , H01L2224/08501 , H01L2224/09181 , H01L2224/32146 , H01L2224/32501 , H01L2224/80895 , H01L2224/83895 , H01L2225/06524 , H01L2924/00014 , H01L2924/01022 , H01L2924/01073 , H01L2924/13091 , H01L2924/15321 , H01L2924/15331 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： There is provided a semiconductor device, including a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a bonding electrode formed on a surface of the interlayer insulating layer, and a metal film which covers an entire surface of a bonding surface including the interlayer insulating layer and the bonding electrode.

8. 发明申请

US20160118436A1 METHOD OF MANUFACTURING AN IMAGE SENSOR BY JOINING A PIXEL CIRCUIT SUBSTRATE AND A LOGIC CIRCUIT SUBSTRATE AND THEREAFTER THINNING THE PIXEL CIRCUIT SUBSTRATE 审中-公开
标题翻译：通过连接像素电路基板和逻辑电路基板制造图像传感器的方法，以及对像素电路基板进行净化的方法
公开(公告)号：US20160118436A1
公开(公告)日：2016-04-28
申请号：US14989508
申请日：2016-01-06
申请人： Sony Corporation
发明人： Nobutoshi Fujii , Kenichi Aoyagi , Yoshiya Hagimoto , Hayato Iwamoto
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L25/0657 , H01L25/50 , H01L27/14634 , H01L27/1464 , H01L27/14683 , H01L27/14689 , H01L27/1469 , H01L31/1876 , H01L2924/0002 , Y02E10/50 , Y02P70/521 , H01L2924/00
摘要： The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate having a second device in opposition to each other; forming a protective film on at least an edge of the second substrate having the second device; and reducing a thickness of the first substrate.
摘要翻译：本技术包括：将具有第一器件的第一衬底的器件形成侧和具有第二器件的第二衬底的器件形成侧彼此相对地接合; 在具有第二装置的第二基板的至少边缘上形成保护膜; 并减小第一基板的厚度。

9. 发明授权

US09147650B2 Semiconductor device, method for manufacturing semiconductor device, and electronic apparatus 有权
标题翻译：半导体装置，半导体装置的制造方法以及电子装置
公开(公告)号：US09147650B2
公开(公告)日：2015-09-29
申请号：US13755881
申请日：2013-01-31
申请人： Sony Corporation
发明人： Yoshiya Hagimoto , Nobutoshi Fujii , Kenichi Aoyagi
IPC分类号： H01L23/48 , H01L23/498 , H01L21/768 , H01L27/146 , H01L23/00 , H01L25/065 , H01L25/00
CPC分类号： H01L24/83 , H01L21/76829 , H01L21/76843 , H01L21/76849 , H01L21/76879 , H01L21/76885 , H01L23/498 , H01L23/49866 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/32 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/1469 , H01L2224/03845 , H01L2224/05026 , H01L2224/05147 , H01L2224/05562 , H01L2224/05666 , H01L2224/05681 , H01L2224/081 , H01L2224/08147 , H01L2224/08501 , H01L2224/09181 , H01L2224/32146 , H01L2224/32501 , H01L2224/80895 , H01L2224/83895 , H01L2225/06524 , H01L2924/00014 , H01L2924/01022 , H01L2924/01073 , H01L2924/13091 , H01L2924/15321 , H01L2924/15331 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： There is provided a semiconductor device, including a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a bonding electrode formed on a surface of the interlayer insulating layer, and a metal film which covers an entire surface of a bonding surface including the interlayer insulating layer and the bonding electrode.
摘要翻译：提供了一种半导体器件，包括半导体衬底，形成在半导体衬底上的层间绝缘层，形成在层间绝缘层的表面上的接合电极和覆盖包括第一绝缘层的接合表面的整个表面的金属膜层间绝缘层和接合电极。

10. 发明申请

US20150162371A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：半导体器件，半导体器件的制造方法和电子器件
公开(公告)号：US20150162371A1
公开(公告)日：2015-06-11
申请号：US14407198
申请日：2013-06-11
申请人： SONY CORPORATION
发明人： Nobutoshi Fujii , Kenichi Aoyagi
IPC分类号： H01L27/146 , H04N5/225
CPC分类号： H01L27/14636 , H01L27/14634 , H01L27/14683 , H01L27/1469 , H04N5/2254
摘要： The present disclosure includes a first substrate including a first wiring layer having a first connection electrode projecting by a predetermined quantity from a first interlayer insulation film and a second wiring layer having a second connection electrode projecting by a predetermined quantity from a second interlayer insulation film. On a bonded surface between the first and second substrates, the first and second connection electrodes are joined with each other, and at the same time, at least a part of the first interlayer insulation film and a part of the second interlayer insulation film which face to each other in a lamination direction are joined with each other.
摘要翻译：本公开内容包括：第一基板，包括具有从第一层间绝缘膜突出预定量的第一连接电极的第一布线层和具有从第二层间绝缘膜突出预定量的第二连接电极的第二布线层。在第一和第二基板之间的接合表面上，第一和第二连接电极彼此接合，同时第一层间绝缘膜和第二层间绝缘膜的至少一部分面对在层叠方向上彼此接合。

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