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1. 发明申请

US20200084408A1 SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING THE SAME, AND CAMERA SYSTEM 审中-公开
公开(公告)号：US20200084408A1
公开(公告)日：2020-03-12
申请号：US16684284
申请日：2019-11-14
申请人： Sony Corporation
发明人： Yuichi Kato , Yoshikazu Nitta , Noriyuki Fukushima , Takashi Suenaga , Toshiyuki Sugita
IPC分类号： H04N5/374 , H04N5/369 , H01L27/146 , H04N5/378 , H04N5/3745 , H04N5/347
摘要： A solid-state imaging element including pixel signal read lines, and a pixel signal reading unit for reading pixel signals from a pixel unit via the pixel signal read line. The pixel unit includes a plurality of pixels arranged in a matrix form, each pixel including a photoelectric conversion element. In the pixel unit, a shared pixel in which an output node is shared among a plurality of pixels is formed, and a pixel signal of each pixel in the shared pixel is capable of being selectively output from the shared output node to a corresponding one of the pixel signal read lines. The pixel signal reading unit sets a bias voltage for a load element which is connected to the pixel signal read line and in which current dependent on a bias voltage flows in the load element, to a voltage causing a current value to be higher than current upon a reference bias voltage when there is no difference between added charge amounts, when addition of pixel signals of the respective pixels in the shared pixel is driven.

2. 发明授权

US10511795B2 Solid-state imaging element, method of driving the same, and camera system 有权
公开(公告)号：US10511795B2
公开(公告)日：2019-12-17
申请号：US15997045
申请日：2018-06-04
申请人： Sony Corporation
发明人： Yuichi Kato , Yoshikazu Nitta , Noriyuki Fukushima , Takashi Suenaga , Toshiyuki Sugita
IPC分类号： H04N5/374 , H04N5/347 , H04N5/3745 , H01L27/146 , H04N5/378 , H04N5/369
摘要： A solid-state imaging element including pixel signal read lines, and a pixel signal reading unit for reading pixel signals from a pixel unit via the pixel signal read line. The pixel unit includes a plurality of pixels arranged in a matrix form, each pixel including a photoelectric conversion element. In the pixel unit, a shared pixel in which an output node is shared among a plurality of pixels is formed, and a pixel signal of each pixel in the shared pixel is capable of being selectively output from the shared output node to a corresponding one of the pixel signal read lines. The pixel signal reading unit sets a bias voltage for a load element which is connected to the pixel signal read line and in which current dependent on a bias voltage flows in the load element, to a voltage causing a current value to be higher than current upon a reference bias voltage when there is no difference between added charge amounts, when addition of pixel signals of the respective pixels in the shared pixel is driven.

3. 发明申请

US20180288351A1 SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING THE SAME, AND CAMERA SYSTEM 审中-公开
公开(公告)号：US20180288351A1
公开(公告)日：2018-10-04
申请号：US15997045
申请日：2018-06-04
申请人： Sony Corporation
发明人： Yuichi Kato , Yoshikazu Nitta , Noriyuki Fukushima , Takashi Suenaga , Toshiyuki Sugita
IPC分类号： H04N5/374 , H04N5/347 , H01L27/146 , H04N5/369 , H04N5/3745 , H04N5/378
CPC分类号： H04N5/3742 , H01L27/14609 , H01L27/14614 , H01L27/14641 , H01L27/14643 , H04N5/347 , H04N5/3698 , H04N5/37455 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging element including pixel signal read lines, and a pixel signal reading unit for reading pixel signals from a pixel unit via the pixel signal read line. The pixel unit includes a plurality of pixels arranged in a matrix form, each pixel including a photoelectric conversion element. In the pixel unit, a shared pixel in which an output node is shared among a plurality of pixels is formed, and a pixel signal of each pixel in the shared pixel is capable of being selectively output from the shared output node to a corresponding one of the pixel signal read lines. The pixel signal reading unit sets a bias voltage for a load element which is connected to the pixel signal read line and in which current dependent on a bias voltage flows in the load element, to a voltage causing a current value to be higher than current upon a reference bias voltage when there is no difference between added charge amounts, when addition of pixel signals of the respective pixels in the shared pixel is driven.

4. 发明授权

US09565383B2 Semiconductor device, solid-state image sensor and camera system 有权
标题翻译：半导体器件，固态图像传感器和相机系统
公开(公告)号：US09565383B2
公开(公告)日：2017-02-07
申请号：US15176602
申请日：2016-06-08
申请人： Sony Corporation
发明人： Shunichi Sukegawa , Noriyuki Fukushima
IPC分类号： H04N5/374 , H01L27/146 , H04N5/3745
CPC分类号： H01L27/14634 , H01L25/167 , H01L25/18 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/1469 , H01L27/14698 , H01L2924/0002 , H04N5/23241 , H04N5/369 , H04N5/3745 , H04N5/37455 , H01L2924/00
摘要： The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.
摘要翻译：本发明涉及半导体器件，固态图像传感器和相机系统，其能够减少芯片之间的连接处的噪声的影响，而无需专门的通信电路，从而降低了成本。半导体器件包括：第一芯片; 以及第二芯片，其中所述第一芯片和所述第二芯片被结合以具有堆叠结构，所述第一芯片具有安装在其上的高压晶体管电路，所述第二芯片安装有具有较低击穿电压的低压晶体管电路并且第一芯片和第二芯片之间的布线通过形成在第一芯片中的通孔连接。

5. 发明申请

US20160286150A1 SEMICONDUCTOR DEVICE, SOLID-STATE IMAGE SENSOR AND CAMERA SYSTEM 审中-公开
标题翻译：半导体器件，固态图像传感器和摄像机系统
公开(公告)号：US20160286150A1
公开(公告)日：2016-09-29
申请号：US15176602
申请日：2016-06-08
申请人： Sony Corporation
发明人： Shunichi Sukegawa , Noriyuki Fukushima
IPC分类号： H04N5/3745 , H01L27/146
CPC分类号： H01L27/14634 , H01L25/167 , H01L25/18 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/1469 , H01L27/14698 , H01L2924/0002 , H04N5/23241 , H04N5/369 , H04N5/3745 , H04N5/37455 , H01L2924/00
摘要： The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.
摘要翻译：本发明涉及半导体器件，固态图像传感器和相机系统，其能够减少芯片之间的连接处的噪声的影响，而无需专门的通信电路，从而降低了成本。半导体器件包括：第一芯片; 以及第二芯片，其中所述第一芯片和所述第二芯片被结合以具有堆叠结构，所述第一芯片具有安装在其上的高压晶体管电路，所述第二芯片安装有具有较低击穿电压的低压晶体管电路并且第一芯片和第二芯片之间的布线通过形成在第一芯片中的通孔连接。

6. 发明申请

US20150312500A1 SEMICONDUCTOR DEVICE, SOLID-STATE IMAGE SENSOR AND CAMERA SYSTEM 审中-公开
标题翻译：半导体器件，固态图像传感器和摄像机系统
公开(公告)号：US20150312500A1
公开(公告)日：2015-10-29
申请号：US14742178
申请日：2015-06-17
申请人： Sony Corporation
发明人： Shunichi Sukegawa , Noriyuki Fukushima
IPC分类号： H04N5/369 , H04N5/232
CPC分类号： H01L27/14634 , H01L25/167 , H01L25/18 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/1469 , H01L27/14698 , H01L2924/0002 , H04N5/23241 , H04N5/369 , H04N5/3745 , H04N5/37455 , H01L2924/00
摘要： The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip 11; and a second chip 12, wherein the first chip 11 and the second chip 12 are bonded to have a stacked structure, the first chip 11 has a high-voltage transistor circuit mounted thereon, the second chip 12 has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.
摘要翻译：本发明涉及半导体器件，固态图像传感器和相机系统，其能够减少芯片之间的连接处的噪声的影响，而无需专门的通信电路，从而降低了成本。半导体器件包括：第一芯片11; 以及第二芯片12，其中第一芯片11和第二芯片12被结合以具有层叠结构，第一芯片11具有安装在其上的高压晶体管电路，第二芯片12上安装有低压晶体管电路具有比高压晶体管电路低的击穿电压，并且第一芯片和第二芯片之间的布线通过形成在第一芯片中的通孔连接。

7. 发明授权

US09160954B2 Solid-state imaging element, method of driving the same, and camera system 有权
标题翻译：固态成像元件，驱动方法和相机系统
公开(公告)号：US09160954B2
公开(公告)日：2015-10-13
申请号：US14288032
申请日：2014-05-27
申请人： Sony Corporation
发明人： Yuichi Kato , Yoshikazu Nitta , Noriyuki Fukushima , Takashi Suenaga , Toshiyuki Sugita
IPC分类号： H04N5/347 , H04N5/3745 , H04N5/374 , H04N5/378 , H01L27/146
CPC分类号： H04N5/3742 , H01L27/14609 , H01L27/14614 , H01L27/14641 , H01L27/14643 , H04N5/347 , H04N5/3698 , H04N5/37455 , H04N5/37457 , H04N5/378
摘要： Provided is a solid-state imaging element including pixel signal read lines, and a pixel signal reading unit for reading pixel signals from a pixel unit via the pixel signal read line. The pixel unit includes a plurality of pixels arranged in a matrix form, each pixel including a photoelectric conversion element. In the pixel unit, a shared pixel in which an output node is shared among a plurality of pixels is formed, and a pixel signal of each pixel in the shared pixel is capable of being selectively output from the shared output node to a corresponding one of the pixel signal read lines. The pixel signal reading unit sets a bias voltage for a load element which is connected to the pixel signal read line and in which current dependent on a bias voltage flows in the load element, to a voltage causing a current value to be higher than current upon a reference bias voltage when there is no difference between added charge amounts, when addition of pixel signals of the respective pixels in the shared pixel is driven.
摘要翻译：提供了包括像素信号读取线的固态成像元件和用于经由像素信号读取线从像素单元读取像素信号的像素信号读取单元。像素单元包括以矩阵形式布置的多个像素，每个像素包括光电转换元件。在像素单元中，形成其中在多个像素之间共享输出节点的共享像素，并且共享像素中的每个像素的像素信号能够被选择性地从共享输出节点输出到像素信号读取线。像素信号读取单元设置连接到像素信号读取线的负载元件的偏置电压，并且其中取决于偏置电压的电流在负载元件中流动到使电流值高于当前值的电流当驱动共享像素中的各个像素的像素信号的相加时，当添加的电荷量之间没有差异时，参考偏置电压。

8. 发明授权

US10057531B2 Solid-state image pickup device and method for driving the same in solid-state imaging pickup device and method for driving the same in a number of modes 有权
公开(公告)号：US10057531B2
公开(公告)日：2018-08-21
申请号：US15893425
申请日：2018-02-09
申请人： Sony Corporation
发明人： Yoshikazu Nitta , Noriyuki Fukushima , Yoshinori Muramatsu , Yukihiko Yasui
IPC分类号： H04N5/378 , H04N5/374 , H04N5/347 , H04N3/14 , H04N5/3745 , H04N5/225 , H04M1/10 , H03M1/10 , H03M1/56
CPC分类号： H04N5/378 , H03M1/1023 , H03M1/56 , H04N3/1562 , H04N5/2253 , H04N5/347 , H04N5/3742 , H04N5/37455
摘要： A system and method for driving a solid-state image pickup device including a pixel array unit including unit pixels. Each unit pixel includes a photoelectric converter, column signal lines and a number of analog-digital converting units. The unit pixels are selectively controlled in units of rows. Analog signals output from the unit pixels in a row selected by the selective control though the column signal lines are converted to digital signals via the analog-digital converting units. The digital signals are added among a number of unit pixels via the analog-digital converting units. The added digital signals from the analog-digital converting units are read. Each unit pixel in the pixel array unit is selectively controlled in units of arbitrary rows, the analog-distal converting units being operable to performing the converting in a (a) normal-frame-rate mode and a (b) high-frame-rate mode in response to control signals.

9. 发明授权

US09954024B2 Semiconductor device, solid-state image sensor and camera system 有权
公开(公告)号：US09954024B2
公开(公告)日：2018-04-24
申请号：US15668265
申请日：2017-08-03
申请人： Sony Corporation
发明人： Shunichi Sukegawa , Noriyuki Fukushima
IPC分类号： H01L27/146 , H01L25/16 , H04N5/232 , H04N5/369
CPC分类号： H01L27/14634 , H01L25/167 , H01L25/18 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/1469 , H01L27/14698 , H01L2924/0002 , H04N5/23241 , H04N5/369 , H04N5/3745 , H04N5/37455 , H01L2924/00
摘要： The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.

10. 发明申请

US20180097031A1 SEMICONDUCTOR DEVICE, SOLID-STATE IMAGE SENSOR AND CAMERA SYSTEM 审中-公开
公开(公告)号：US20180097031A1
公开(公告)日：2018-04-05
申请号：US15832951
申请日：2017-12-06
申请人： Sony Corporation
发明人： Shunichi Sukegawa , Noriyuki Fukushima
IPC分类号： H01L27/146 , H04N5/369 , H04N5/232 , H01L25/16
CPC分类号： H01L27/14634 , H01L25/167 , H01L25/18 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/1469 , H01L27/14698 , H01L2924/0002 , H04N5/23241 , H04N5/369 , H04N5/3745 , H04N5/37455 , H04N5/379 , H01L2924/00
摘要： The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.

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