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1. 发明申请

US20200161354A1 SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20200161354A1
公开(公告)日：2020-05-21
申请号：US16748564
申请日：2020-01-21
申请人： Sony Corporation
发明人： Shoji Kobayashi , Yoshiharu Kudoh , Takuya Sano
IPC分类号： H01L27/146 , H04N5/225 , H04N5/374 , H04N5/369
摘要： A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

2. 发明授权

US10468442B2 Solid-state imaging device and camera 有权
公开(公告)号：US10468442B2
公开(公告)日：2019-11-05
申请号：US15932236
申请日：2018-02-16
申请人： Sony Corporation
发明人： Yoshiharu Kudoh
IPC分类号： H01L27/146 , H04N5/3745 , H04N5/374 , H04N5/378
摘要： A solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.

3. 发明授权

US10205893B2 Solid-state imaging device and driving method of solid-state imaging device 有权
公开(公告)号：US10205893B2
公开(公告)日：2019-02-12
申请号：US15557845
申请日：2016-01-07
申请人： SONY CORPORATION
发明人： Yoshiharu Kudoh
IPC分类号： H04N5/353 , H01L27/146 , H04N5/3745
摘要： An imaging device of a CMOS type having a global shutter function is downsized.In the imaging device, a photoelectric conversion unit generates charge corresponding to an exposure amount in a predetermined exposure period. A generated charge retaining unit is formed to have a predetermined impurity concentration in a semiconductor substrate and retains the charge. A generated charge transferring unit renders the photoelectric conversion unit and the generated charge retaining unit conductive therebetween after the exposure period has elapsed and transfers the charge from the photoelectric conversion unit to the generated charge retaining unit. An output charge retaining unit is formed to have substantially the same impurity concentration as that of the generated charge retaining unit and retains charge. A retained charge distributing unit renders the generated charge retaining unit and the output charge retaining unit conductive therebetween and uniformly distributes the charge retained in the generated charge retaining unit to the generated charge retaining unit and the output charge retaining unit. A signal generating unit generates a signal corresponding to the charge retained in the output charge retaining unit as an image signal after the distribution in the retained charge distributing unit.

4. 发明授权

US09749505B2 Solid-state imaging device and control system 有权
公开(公告)号：US09749505B2
公开(公告)日：2017-08-29
申请号：US14253576
申请日：2014-04-15
申请人： Sony Corporation
发明人： Maki Sato , Yoshiharu Kudoh
IPC分类号： H01L31/113 , H04N5/351 , H04N5/217 , H04N3/14 , H04N5/359 , H04N5/235 , H01L27/146
CPC分类号： H04N5/2175 , H01L27/14654 , H04N3/1568 , H04N5/2351 , H04N5/351 , H04N5/3591 , H04N5/3592 , H04N5/374
摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged on a semiconductor substrate, in which each of the pixels includes a photoelectric converting portion and a charge converting portion for converting a charge generated by photoelectric conversion into a pixel signal and blooming is suppressed by controlling a substrate voltage of the semiconductor substrate.

5. 发明申请

US20170237916A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20170237916A1
公开(公告)日：2017-08-17
申请号：US15585503
申请日：2017-05-03
申请人： Sony Corporation
发明人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
IPC分类号： H04N5/361 , H04N5/378 , H01L27/146 , H04N5/374
CPC分类号： H04N5/361 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14623 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H04N5/2176 , H04N5/374 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

6. 发明授权

US09627432B2 Semiconductor integrated circuit, electronic device, solid-state imaging apparatus, and imaging apparatus 有权
公开(公告)号：US09627432B2
公开(公告)日：2017-04-18
申请号：US15084792
申请日：2016-03-30
申请人： Sony Corporation
发明人： Yoshiharu Kudoh
IPC分类号： H01L27/14 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14612 , H01L27/14623 , H01L27/14634 , H01L27/14636 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H04N5/3765 , H04N5/378 , H01L2924/00
摘要： A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.

7. 发明申请

US20170085815A1 SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA SYSTEM 审中-公开
公开(公告)号：US20170085815A1
公开(公告)日：2017-03-23
申请号：US15364472
申请日：2016-11-30
申请人： SONY CORPORATION
发明人： Eiichi Funatsu , Hiroaki Ebihara , Yoshiharu Kudoh
IPC分类号： H04N5/355 , H04N5/378 , H01L27/146 , H04N5/3745
CPC分类号： H04N5/3559 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14656 , H04N5/35563 , H04N5/374 , H04N5/37457 , H04N5/378
摘要： A solid-state image pickup device includes a pixel unit in which a plurality of photoelectric conversion elements having different sensitivities are arranged; and a pixel reading unit configured to read and add output signals from the plurality of photoelectric conversion elements in the pixel unit, and to obtain an output signal seemingly from one pixel. The pixel unit includes an absorbing unit configured to absorb overflowing electric charge from a photoelectric conversion element with a high sensitivity.

8. 发明授权

US09531975B2 Solid-state imaging device and camera 有权
公开(公告)号：US09531975B2
公开(公告)日：2016-12-27
申请号：US14754334
申请日：2015-06-29
申请人： Sony Corporation
发明人： Yoshiharu Kudoh
IPC分类号： H01L27/146 , H04N5/3745
CPC分类号： H04N5/3745 , H01L27/14603 , H01L27/1461 , H01L27/14614 , H01L27/14616 , H01L27/14641 , H01L27/14643 , H04N5/374 , H04N5/378
摘要： A solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.

9. 发明申请

US20160037033A1 SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开
标题翻译：固态成像装置和电子装置
公开(公告)号：US20160037033A1
公开(公告)日：2016-02-04
申请号：US14881818
申请日：2015-10-13
申请人： Sony Corporation
发明人： Shoji Kobayashi , Yoshiharu Kudoh , Takuya Sano
IPC分类号： H04N5/225
CPC分类号： H01L27/14623 , H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H04N5/2253 , H04N5/2254 , H04N5/369 , H04N5/374
摘要： A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.
摘要翻译：一种固态成像装置，包括：形成在基板的光入射侧并且配置有包括光电转换单元的多个像素的像素区域; 外围电路单元，其形成在像素区域的基板深度方向的下部，并且包括有源元件; 以及形成在像素区域和外围电路单元之间并且遮蔽从有源元件发射的光的入射到光电转换单元的遮光构件。

10. 发明授权

US11362131B2 Semiconductor integrated circuit, electronic device, solid-state imaging apparatus, and imaging apparatus 有权
公开(公告)号：US11362131B2
公开(公告)日：2022-06-14
申请号：US16944798
申请日：2020-07-31
申请人： Sony Corporation
发明人： Yoshiharu Kudoh
IPC分类号： H01L27/146 , H04N5/376 , H04N5/378
摘要： A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.

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