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1. 发明申请

US20120155156A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS 审中-公开
标题翻译：用于提供具有通过覆盖层改善的性能的磁性隧道结构元件的方法和系统使用这种磁性元件诱导的各向异性和记忆
公开(公告)号：US20120155156A1
公开(公告)日：2012-06-21
申请号：US13035726
申请日：2011-02-25
申请人： Steven M. Watts , Zhitao Diao , Xueti Tang , Kiseok Moon , Mohamad Towfik Krounbi
发明人： Steven M. Watts , Zhitao Diao , Xueti Tang , Kiseok Moon , Mohamad Towfik Krounbi
IPC分类号： G11C11/02 , G11B5/84 , G11B5/64
CPC分类号： G11C11/1675 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/325 , H01F41/34
摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供使用磁性元件的磁性元件和磁性存储器的方法和系统。磁性元件用于包括电耦合到磁性元件的触点的磁性装置中。该方法和系统包括提供固定，非磁性间隔物和自由层。自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。非磁性间隔层位于被钉扎层和自由层之间。该方法和系统还包括提供与自由层和接触相邻的垂直覆盖层。垂直覆盖层在自由层中引起至少一部分垂直磁各向异性。磁性元件被配置为当写入电流通过磁性元件时允许自由层在磁状态之间切换。

2. 发明授权

US10446209B2 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements 有权
公开(公告)号：US10446209B2
公开(公告)日：2019-10-15
申请号：US13035726
申请日：2011-02-25
申请人： Steven M. Watts , Zhitao Diao , Xueti Tang , Kiseok Moon , Mohamad Towfik Krounbi
发明人： Steven M. Watts , Zhitao Diao , Xueti Tang , Kiseok Moon , Mohamad Towfik Krounbi
IPC分类号： B82Y25/00 , B82Y40/00 , G01R33/09 , G11C11/16 , H01F10/32 , H01F41/30 , H01F41/32 , H01F41/34
摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

3. 发明授权

US08913350B2 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements 有权
标题翻译：通过覆盖层诱导垂直各向异性和使用这种磁性元件的存储器来提供具有改进性能的磁性隧道接合元件的方法和系统
公开(公告)号：US08913350B2
公开(公告)日：2014-12-16
申请号：US12538489
申请日：2009-08-10
申请人： Steven M. Watts , Zhitao Diao , Xueti Tang
发明人： Steven M. Watts , Zhitao Diao , Xueti Tang
IPC分类号： G11B5/33 , B82Y40/00 , G11C11/16 , H01L43/08 , G01R33/09 , B82Y25/00 , H01F41/30 , H01F10/32 , H01F41/34
CPC分类号： G01R33/098 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/325 , H01F41/34 , H01L43/08
摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供使用磁性元件的磁性元件和磁性存储器的方法和系统。磁性元件用于包括电耦合到磁性元件的触点的磁性装置中。该方法和系统包括提供固定，非磁性间隔物和自由层。自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。非磁性间隔层位于被钉扎层和自由层之间。该方法和系统还包括提供与自由层和接触相邻的垂直覆盖层。垂直覆盖层在自由层中引起至少一部分垂直磁各向异性。磁性元件被配置为当写入电流通过磁性元件时允许自由层在磁状态之间切换。

4. 发明申请

US20110031569A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS 审中-公开
公开(公告)号：US20110031569A1
公开(公告)日：2011-02-10
申请号：US12776331
申请日：2010-05-07
申请人： Steven M. Watts , Zhitao Diao , Xueti Tang
发明人： Steven M. Watts , Zhitao Diao , Xueti Tang
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L27/224 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , G11C11/161 , G11C11/1675 , G11C11/5607 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/34 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

5. 发明申请

US20110032644A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS 有权
标题翻译：用于提供具有通过覆盖层改善的性能的磁性隧道结构元件的方法和系统使用这种磁性元件诱导的各向异性和记忆
公开(公告)号：US20110032644A1
公开(公告)日：2011-02-10
申请号：US12538489
申请日：2009-08-10
申请人： Steven M. Watts , Zhitao Diao , Xueti Tang
发明人： Steven M. Watts , Zhitao Diao , Xueti Tang
IPC分类号： G11B5/127
CPC分类号： G01R33/098 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/325 , H01F41/34 , H01L43/08
摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供使用磁性元件的磁性元件和磁性存储器的方法和系统。磁性元件用于包括电耦合到磁性元件的触点的磁性装置中。该方法和系统包括提供固定，非磁性间隔物和自由层。自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。非磁性间隔层位于被钉扎层和自由层之间。该方法和系统还包括提供与自由层和接触相邻的垂直覆盖层。垂直覆盖层在自由层中引起至少一部分垂直磁各向异性。磁性元件被配置为当写入电流通过磁性元件时允许自由层在磁状态之间切换。

6. 发明授权

US07916433B2 Magnetic element utilizing free layer engineering 有权
标题翻译：使用自由层工程的磁性元件
公开(公告)号：US07916433B2
公开(公告)日：2011-03-29
申请号：US12816108
申请日：2010-06-15
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： G11B5/127 , G11C11/14
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11C11/161 , H01L43/10 , Y10T428/115
摘要： A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，阻挡层和自由层。自由层包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的中间层。阻挡层位于被钉扎层和自由层之间，并且包括MgO。第一铁磁层位于阻挡层和中间层之间。第一铁磁层包括CoFeX和CoNiFeX中的至少一种，其中X选自B，P，Si，Nb，Zr，Hf，Ta，Ti，并且大于零原子百分比且不超过三十个原子百分。第一铁磁层与第二铁磁层铁磁耦合。中间层被配置为使得第一铁磁层具有第一结晶取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。

7. 发明授权

US07821087B2 Spin transfer magnetic element having low saturation magnetization free layers 有权
标题翻译：具有低饱和磁化自由层的自旋转移磁性元件
公开(公告)号：US07821087B2
公开(公告)日：2010-10-26
申请号：US11685723
申请日：2007-03-13
申请人： Paul Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
发明人： Paul Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

8. 发明授权

US07289356B2 Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein 有权
标题翻译：使用其中的旋转转移和磁性元件的快速磁存储器件
公开(公告)号：US07289356B2
公开(公告)日：2007-10-30
申请号：US11147944
申请日：2005-06-08
申请人： Zhitao Diao , Yiming Huai , Mahendra Pakala , Zhenghong Qian
发明人： Zhitao Diao , Yiming Huai , Mahendra Pakala , Zhenghong Qian
IPC分类号： G11C7/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元，多个字线和多个位线。多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。多个磁性元件中的每一个具有第一端和第二端。所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。

9. 发明授权

US07242045B2 Spin transfer magnetic element having low saturation magnetization free layers 有权
标题翻译：具有低饱和磁化自由层的自旋转移磁性元件
公开(公告)号：US07242045B2
公开(公告)日：2007-07-10
申请号：US10783416
申请日：2004-02-19
申请人： Paul P. Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
发明人： Paul P. Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
IPC分类号： H01L29/76
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

10. 发明授权

US07187577B1 Method and system for providing current balanced writing for memory cells and magnetic devices 有权
标题翻译：为存储器单元和磁性器件提供电流平衡写入的方法和系统
公开(公告)号：US07187577B1
公开(公告)日：2007-03-06
申请号：US11286083
申请日：2005-11-23
申请人： Lien-Chang Wang , Zhitao Diao , Yunfei Ding
发明人： Lien-Chang Wang , Zhitao Diao , Yunfei Ding
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is included. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.
摘要翻译：包括提供磁存储器的方法和系统。该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

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