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1. 发明申请

US20100176408A1 LIGHT-EMITTING DIODE WITH HIGH LIGHTING EFFICIENCY 有权
标题翻译：具有高照明效率的发光二极管
公开(公告)号：US20100176408A1
公开(公告)日：2010-07-15
申请号：US12421869
申请日：2009-04-10
申请人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/387 , H01L2933/0083
摘要： The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.
摘要翻译：本发明公开了一种发光二极管，包括基板，第一导电型半导体层，第二导电型半导体层，发光层和多层叠结构。依次在基板上形成第一导电型半导体层，发光层和第二导电型半导体层。在第二导电型半导体层的上表面上形成多个叠层结构，使得上表面部分露出。每个层压结构由至少一个具有高折射率的第一绝缘层和至少一个具有低折射率的第二绝缘层组成，其中至少一个第一绝缘层和至少一个第二绝缘层交替地形成以获得说每个层压结构。由此，从发光层发出的光可以被叠层结构反射，以提高光提取效率。

2. 发明授权

US08247837B2 Light-emitting diode with high lighting efficiency 有权
标题翻译：发光二极管具有高照明效率
公开(公告)号：US08247837B2
公开(公告)日：2012-08-21
申请号：US12421872
申请日：2009-04-10
申请人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/42
摘要： The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.
摘要翻译：本发明公开了一种发光二极管。在一个实施例中，发光二极管包括基板，第一掺杂型半导体层，第二掺杂型半导体层，发光层和多个叠层结构。依次在基板上形成第一掺杂型半导体层，发光层和第二掺杂型半导体层。多个叠层结构形成在第二掺杂型半导体层的顶表面上，使得顶表面部分露出。每个层压结构由具有各自折射率的多个透明绝缘层组成。另外，各层叠结构体以与透明绝缘层的折射率逐渐降低的顺序向上堆积透明绝缘层的方式形成，从而提高发光体的光提取效率和照明效率，发光二极管。

3. 发明授权

US07804104B2 Light-emitting diode with high lighting efficiency 有权
标题翻译：发光二极管具有高照明效率
公开(公告)号：US07804104B2
公开(公告)日：2010-09-28
申请号：US12421869
申请日：2009-04-10
申请人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L27/15
CPC分类号： H01L33/46 , H01L33/387 , H01L2933/0083
摘要： The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.
摘要翻译：本发明公开了一种发光二极管，包括基板，第一导电型半导体层，第二导电型半导体层，发光层和多层叠结构。依次在基板上形成第一导电型半导体层，发光层和第二导电型半导体层。在第二导电型半导体层的上表面上形成多个叠层结构，使得上表面部分露出。每个层压结构由至少一个具有高折射率的第一绝缘层和至少一个具有低折射率的第二绝缘层组成，其中至少一个第一绝缘层和至少一个第二绝缘层交替地形成以获得说每个层压结构。由此，从发光层发出的光可以被叠层结构反射，以提高光提取效率。

4. 发明申请

US20100176419A1 LIGHT-EMITTING DIODE WITH HIGH LIGHTING EFFICIENCY 有权
标题翻译：具有高照明效率的发光二极管
公开(公告)号：US20100176419A1
公开(公告)日：2010-07-15
申请号：US12421872
申请日：2009-04-10
申请人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/42
摘要： The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.
摘要翻译：本发明公开了一种发光二极管。在一个实施例中，发光二极管包括基板，第一掺杂型半导体层，第二掺杂型半导体层，发光层和多个叠层结构。依次在基板上形成第一掺杂型半导体层，发光层和第二掺杂型半导体层。多个叠层结构形成在第二掺杂型半导体层的顶表面上，使得顶表面部分露出。每个层压结构由具有各自折射率的多个透明绝缘层组成。另外，各层叠结构体以与透明绝缘层的折射率逐渐降低的顺序向上堆叠透明绝缘层的方式形成，从而提高发光体的光提取效率和照明效率，发光二极管。

5. 发明申请

US20100230706A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100230706A1
公开(公告)日：2010-09-16
申请号：US12755019
申请日：2010-04-06
申请人： Tzong Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
发明人： Tzong Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
IPC分类号： H01L33/02
CPC分类号： H01L33/44 , H01L33/20 , H01L2933/0091
摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.
摘要翻译：本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块结构。第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。第一电极形成在第一区域上。在第二区域上形成发光层和第二导电型半导体材料层。凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。在每个凸块结构的侧壁中形成至少一个凹部。或者，每个凸块结构的侧壁具有弯曲的轮廓。

6. 发明授权

US08247822B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08247822B2
公开(公告)日：2012-08-21
申请号：US12856221
申请日：2010-08-13
申请人： Chih Ching Cheng , Tzong Liang Tsai , Shu Hui Lin
发明人： Chih Ching Cheng , Tzong Liang Tsai , Shu Hui Lin
IPC分类号： H01L27/15
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.
摘要翻译：半导体发光器件包括衬底，位于衬底上的第一导电类型半导体层，位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。基板包括上表面和位于上表面上的多个突起。每个突起包括顶表面，多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

7. 发明申请

US20110001147A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110001147A1
公开(公告)日：2011-01-06
申请号：US12856221
申请日：2010-08-13
申请人： Chih CHING Cheng , Tzong Liang Tsai , Shu Hui Lin
发明人： Chih CHING Cheng , Tzong Liang Tsai , Shu Hui Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.
摘要翻译：半导体发光器件包括衬底，位于衬底上的第一导电类型半导体层，位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。基板包括上表面和位于上表面上的多个突起。每个突起包括顶表面，多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

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