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1. 发明申请

US20180286637A1 ION IMPLANTER AND ION IMPLANTATION METHOD 审中-公开
公开(公告)号：US20180286637A1
公开(公告)日：2018-10-04
申请号：US15937346
申请日：2018-03-27
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Syuta Ochi , Shiro Ninomiya , Yuuji Takahashi , Tadanobu Kagawa
IPC分类号： H01J37/32 , H01L21/223
CPC分类号： H01J37/32412 , H01J37/3171 , H01J37/3233 , H01J37/32422 , H01L21/2236
摘要： An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.

2. 发明授权

US09564289B2 Ion implanter and method of controlling the same 有权
标题翻译：离子注入机及其控制方法
公开(公告)号：US09564289B2
公开(公告)日：2017-02-07
申请号：US14793265
申请日：2015-07-07
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Tadanobu Kagawa , Toshio Yumiyama , Takeshi Kurose
IPC分类号： H01J37/317 , H01J37/24
CPC分类号： H01J37/241 , H01J37/3171
摘要： An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.
摘要翻译：离子注入机包括高压电源，产生控制高电压电源的输出电压的指令信号的控制单元，施加输出电压的电极单元和测量实际的测量单元施加到电极单元的电压。控制单元包括：第一生成部，其生成用于使高压电源输出目标电压的第一指令信号;第二生成部，生成用于补充第一指令信号的第二指令信号，使得测量的实际电压通过测量单元变得或接近目标电压，以及命令部分，其通过合成第一命令信号和第二命令信号而产生合成命令信号给高压电源。

3. 发明授权

US10249477B2 Ion implanter and ion implantation method 有权
公开(公告)号：US10249477B2
公开(公告)日：2019-04-02
申请号：US15937346
申请日：2018-03-27
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Syuta Ochi , Shiro Ninomiya , Yuuji Takahashi , Tadanobu Kagawa
IPC分类号： H01J37/32 , H01L21/223 , H01J37/317
摘要： An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.

4. 发明授权

US09379030B2 Ion implantation method and ion implantation apparatus 有权
标题翻译：离子注入法和离子注入装置
公开(公告)号：US09379030B2
公开(公告)日：2016-06-28
申请号：US14013862
申请日：2013-08-29
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Shiro Ninomiya , Tadanobu Kagawa , Toshio Yumiyama , Akira Funai , Takashi Kuroda
IPC分类号： H01L21/66 , H01J37/08 , C23C14/48 , H01J37/304 , H01J37/317
CPC分类号： H01L22/14 , C23C14/48 , H01J37/304 , H01J37/3171 , H01J2237/0206
摘要： Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.
摘要翻译：提供了一种将由离子源产生的离子输送到晶片并且通过在晶片上照射离子束将离子注入晶片的离子注入方法，包括在离子注入晶片期间使用多个检测单元，可以基于具有放电可能性的检测事件的存在和事件对离子束的影响程度来检测具有放电可能性的事件和确定离子束的状态。

5. 发明申请

US20160013014A1 ION IMPLANTER AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：离子植入物及其控制方法
公开(公告)号：US20160013014A1
公开(公告)日：2016-01-14
申请号：US14793265
申请日：2015-07-07
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Tadanobu Kagawa , Toshio Yumiyama , Takeshi Kurose
IPC分类号： H01J37/24 , H01J37/08 , H01J37/147 , H01J37/317 , H01J37/10
CPC分类号： H01J37/241 , H01J37/3171
摘要： An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.
摘要翻译：离子注入机包括高压电源，产生控制高电压电源的输出电压的指令信号的控制单元，施加输出电压的电极单元和测量实际的测量单元施加到电极单元的电压。控制单元包括：第一生成部，其生成用于使高压电源输出目标电压的第一指令信号;第二生成部，生成用于补充第一指令信号的第二指令信号，使得测量的实际电压通过测量单元变得或接近目标电压，以及命令部分，其通过合成第一命令信号和第二命令信号而产生合成命令信号给高压电源。

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