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1. 发明申请

US20140261665A1 METHODS AND SEMICONDUCTOR MATERIALS SUITABLE FOR PHOTOVOLTAIC CELLS 审中-公开
标题翻译：方法和半导体材料适用于光伏电池
公开(公告)号：US20140261665A1
公开(公告)日：2014-09-18
申请号：US14207408
申请日：2014-03-12
申请人： Suneel Girish Joglekar
发明人： Suneel Girish Joglekar
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/0322 , H01L31/0749 , Y02E10/541
摘要： Methods and semiconductor materials produced by such methods that are suitable for use in photovoltaic cells, solar cells fabricated with such methods, and solar panels composed thereof. Such methods include a wet-chemical synthesis method capable of producing a Group I-III-VI2 semiconductor material by forming a solution containing an organic solvent, at least one Group I precursor of at least one Group I element, and at least one Group III precursor of at least one Group III element. The Group I precursor is present in the solution in an amount of less than 120% of a stoichiometric ratio of the Group I element in the Group I-III-VI2 semiconductor material, and the Group III precursor is present in the solution in an amount of greater than 55% of a stoichiometric ratio of the Group III element in the Group I-III-VI2 semiconductor material.
摘要翻译：通过适用于光伏电池的方法生产的方法和半导体材料，用这种方法制造的太阳能电池以及由其组成的太阳能电池板。这样的方法包括能够通过形成含有有机溶剂的溶液，至少一种至少一种I族元素的至少一种I族前体和至少一种III族III族元素的I-III-VI2族半导体材料的湿式化学合成方法至少一个III族元素的前体。 I族前体在溶液中的存在量小于I-III-VI2族半导体材料中第I族元素的化学计量比的120％，并且III族前体的量存在于溶液中的I-III-VI2族半导体材料中III族元素的化学计量比的55％以上。

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