会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明申请
    • Optical microscope system for detecting nanowires using polarizer and fast fourier transform
    • 用于使用偏振器和快速傅里叶变换检测纳米线的光学显微镜系统
    • US20090195869A1
    • 2009-08-06
    • US11940379
    • 2007-11-15
    • Eun Kyoung KimSeung Eon MoonHong Yeol LeeJong Hyurk ParkKang Ho ParkJong Dae KimGyu Tae KimDo Young JangEung Seok ParkHyun Jin Ji
    • Eun Kyoung KimSeung Eon MoonHong Yeol LeeJong Hyurk ParkKang Ho ParkJong Dae KimGyu Tae KimDo Young JangEung Seok ParkHyun Jin Ji
    • G02B21/06G06K9/00
    • G02B21/06G01N21/21G02B21/365G02B27/286Y10S977/881
    • Provided is an optical microscope system for detecting nanowires that is designed with a rotational polarizer and Fast Fourier Transform (FFT) to allow for use of an existing optical microscope in fabricating an electronic device having the nanowires. The optical microscope system includes: a light source for emitting light to provide the light to a nanowire sample; a rotational polarizer provided on a path of the light emitted from the light source for polarizing the light; an optical microscope for detecting a nanowire image using light that is polarized by the rotational polarizer and incident on the nanowire sample; a CCD camera provided in a region of the optical microscope for photographing and storing the nanowire image detected by the optical microscope; and a data processor for performing Fast Fourier Transform (FFT) on the nanowire image stored in the CCD camera. Intensity of reflected light varies, due to optical anisotropy of the nanowires, along a polarizing orientation of light incident on the nanowires. It is possible to obtain a distinct image of the nanowires having a nanometer line width by performing FFT on each pixel of reflected light images obtained at predetermined time intervals after light passing through the polarizer rotating in a predetermined period is incident on the nanowires.
    • 提供了一种用于检测纳米线的光学显微镜系统,其被设计为具有旋转偏振器和快速傅里叶变换(FFT),以允许使用现有的光学显微镜来制造具有纳米线的电子器件。 光学显微镜系统包括:用于发射光以向纳米线样品提供光的光源; 设置在从光源发射的光的路径上以使光偏振的旋转偏振器; 光学显微镜,用于使用被旋转偏振器偏振并入射在纳米线样品上的光检测纳米线图像; 设置在光学显微镜的区域中的CCD照相机,用于拍摄和存储由光学显微镜检测的纳米线图像; 以及用于在存储在CCD照相机中的纳米线图像上执行快速傅里叶变换(FFT)的数据处理器。 反射光的强度由于纳米线的光学各向异性而沿着入射在纳米线上的光的偏振方向而变化。 通过在经过预定时间内旋转的偏振片的光入射到纳米线上之后,以预定时间间隔获得的反射光图像的每个像素执行FFT,可以获得具有纳米线宽度的纳米线的不同图像。
    • 7. 发明申请
    • METHOD OF FABRICATING NANO-WIRE ARRAY
    • 制作纳米线阵列的方法
    • US20080233675A1
    • 2008-09-25
    • US11927881
    • 2007-10-30
    • Hong Yeol LeeSeung Eon MoonEun Kyoung KimJong Hyurk ParkKang Ho ParkJong Dae KimGyu Tae KimJae Woo LeeHye Yeon RyuJung Hwan Huh
    • Hong Yeol LeeSeung Eon MoonEun Kyoung KimJong Hyurk ParkKang Ho ParkJong Dae KimGyu Tae KimJae Woo LeeHye Yeon RyuJung Hwan Huh
    • H01L21/00
    • H01L29/0673H01L21/76289H01L27/1225H01L29/0665H01L29/24H01L29/66969H01L29/7869Y10S977/762
    • Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.
    • 提供一种制造纳米线阵列的方法,包括以下步骤:在衬底上沉积包含纳米线的纳米线溶液; 在衬底上形成带状的第一蚀刻区域,然后对纳米线进行构图; 形成彼此平行的漏极和源极电极线,其间插入图案化的纳米线; 形成多个漏电极,所述多个漏电极的一端连接到所述漏电极线并接触所述纳米线中的至少一个,并且形成多个源电极,所述多个源电极的一端连接到所述源电极线并接触所述纳米线, 接触漏电极的电线; 在所述漏极和源极电极之间形成第二蚀刻区域,以防止所述漏极和源极电极之间的电接触; 在所述基板上形成绝缘层; 以及在与绝缘层上的纳米线接触的漏极和源电极之间形成栅电极。 因此,即使在纳米线与电极线的不平行结构中,大规模的纳米线阵列也是可行的并且适用于具有纳米线对准困难的集成电路或显示单元以及使用柔性基板的器件应用。
    • 8. 发明授权
    • Method of fabricating nano-wire array
    • 制造纳米线阵列的方法
    • US07846786B2
    • 2010-12-07
    • US11927881
    • 2007-10-30
    • Hong Yeol LeeSeung Eon MoonEun Kyoung KimJong Hyurk ParkKang Ho ParkJong Dae KimGyu Tae KimJae Woo LeeHye Yeon RyuJung Hwan Huh
    • Hong Yeol LeeSeung Eon MoonEun Kyoung KimJong Hyurk ParkKang Ho ParkJong Dae KimGyu Tae KimJae Woo LeeHye Yeon RyuJung Hwan Huh
    • H01L21/00H01L21/16H01L29/06H01L27/088
    • H01L29/0673H01L21/76289H01L27/1225H01L29/0665H01L29/24H01L29/66969H01L29/7869Y10S977/762
    • Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.
    • 提供一种制造纳米线阵列的方法,包括以下步骤:在衬底上沉积包含纳米线的纳米线溶液; 在衬底上形成带状的第一蚀刻区域,然后对纳米线进行构图; 形成彼此平行的漏极和源极电极线,其间插入图案化的纳米线; 形成多个漏电极,所述多个漏电极的一端连接到所述漏电极线并接触所述纳米线中的至少一个,并且形成多个源电极,所述多个源电极的一端连接到所述源电极线并接触所述纳米线, 接触漏电极的电线; 在所述漏极和源极电极之间形成第二蚀刻区域,以防止所述漏极和源极电极之间的电接触; 在所述基板上形成绝缘层; 以及在与绝缘层上的纳米线接触的漏极和源电极之间形成栅电极。 因此,即使在纳米线与电极线的不平行结构中,大规模的纳米线阵列也是可行的并且适用于具有纳米线对准困难的集成电路或显示单元以及使用柔性基板的器件应用。