会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Array panel
    • 阵列面板
    • US07638774B2
    • 2009-12-29
    • US10550480
    • 2004-03-30
    • Kyo-Seop ChooJin JeonJun-Ho Song
    • Kyo-Seop ChooJin JeonJun-Ho Song
    • H01L31/115
    • H01L27/14676H01L27/1255H01L29/78669
    • An array panel for a digital X-ray detector including a gate driver (150) is disclosed. A switching element (TFT) is formed in a pixel region defined by gate (110) and data lines (120). A photoelectric cell (130) generates electrons in response to the light supplied from outward. A pixel electrode (260) is formed in the pixel region, and gathers electrons generated from the photoelectric cell (130). A storage capacitor (C) is connected to the drain electrode (225) and stores the electrons gathered in the pixel electrode (260). A gate driver (150) is electrically connected to an end portion of the gate line (110), and provides a scan signal for driving the switching element (TFT). A data pad (140) is electrically connected to an end portion of the data line (120). The electrons stored in the storage capacitor (C) move to the data pad (140) as the switching element (TFT) is turned on. Therefore, the manufacturing cost is reduced, and the manufacturing process is simplified.
    • 公开了一种用于包括栅极驱动器(150)的数字X射线检测器的阵列面板。 开关元件(TFT)形成在由栅极(110)和数据线(120)限定的像素区域中。 光电池(130)响应于从外部供应的光而产生电子。 像素电极(260)形成在像素区域中,并且聚集从光电池(130)产生的电子。 存储电容器(C)连接到漏电极(225)并存储聚集在像素电极(260)中的电子。 栅极驱动器(150)电连接到栅极线(110)的端部,并且提供用于驱动开关元件(TFT)的扫描信号。 数据焊盘(140)电连接到数据线(120)的端部。 存储在存储电容器(C)中的电子随着开关元件(TFT)导通而移动到数据焊盘(140)。 因此,制造成本降低,制造工序简化。
    • 7. 发明授权
    • Method of forming a thin film transistor array panel using photolithography techniques
    • 使用光刻技术形成薄膜晶体管阵列面板的方法
    • US06531392B2
    • 2003-03-11
    • US09418476
    • 1999-10-15
    • Jun-Ho SongWoon-Yong Park
    • Jun-Ho SongWoon-Yong Park
    • H01L21443
    • G02F1/13458G02F1/134363G02F1/1362G02F1/136227H01L27/1255H01L27/1288H01L29/42384H01L29/66765
    • A gate wire is formed on an insulating substrate by a photolithography process using the first mask, and a gate insulating layer and a semiconductor layer are sequentially deposited. Then, an ohmic contact layer made of silicide or microcrystallized and doped amorphous silicon is formed on the semiconductor layer. Then, a triple pattern including a gate insulating layer, a semiconductor layer and an ohmic contact layer are patterned at the same time by a photolithography process using the second mask. At this time, a contact hole exposing the gate pad is formed. An ITO layer and a metal layer are deposited and patterned to form a data wire, a pixel electrode, and a redundant gate pad by a photolithography process using the third mask. The ohmic contact layer, which is not covered with the ITO layer and the metal layer, is removed. A passivation layer is deposited and patterned by a photolithography process using the fourth mask. Next, the metal layer of the pixel electrode, the redundant gate pad, and the data pad, which is not covered with the passivation layer, is removed. At this time, the semiconductor layer that is not covered with the passivation layer is removed to separate the semiconductor layer under the neighboring the data lines.
    • 通过使用第一掩模的光刻工艺在绝缘基板上形成栅极线,并且顺序地淀积栅极绝缘层和半导体层。 然后,在半导体层上形成由硅化物或微结晶和掺杂非晶硅制成的欧姆接触层。 然后,通过使用第二掩模的光刻工艺同时对包括栅绝缘层,半导体层和欧姆接触层的三重图案进行图案化。 此时,形成露出栅极焊盘的接触孔。 通过使用第三掩模的光刻工艺沉积和图案化ITO层和金属层以形成数据线,像素电极和冗余栅极焊盘。 除去未被ITO层和金属层覆盖的欧姆接触层。 通过使用第四掩模的光刻工艺沉积并图案化钝化层。 接下来,去除未被钝化层覆盖的像素电极的金属层,冗余栅极焊盘和数据焊盘。 此时,去除未被钝化层覆盖的半导体层,以在相邻的数据线之下分离半导体层。
    • 8. 发明授权
    • Liquid crystal display devices
    • US06411358B1
    • 2002-06-25
    • US09804350
    • 2001-03-12
    • Jun-Ho SongKyeong-Nam Lee
    • Jun-Ho SongKyeong-Nam Lee
    • G02F11343
    • A gate wire including a gate line, a gate electrode, a gate pad and a gate line connector and a common signal wire are formed on a substrate, and a gate insulating layer is formed over the gate wire and the common signal wire. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer, a data wire including a source and a drain electrode, a data line, a data pad and a data line connector and a pixel electrode are formed thereon. The thickness of the data wire and the pixel electrode is equal to or less than 500 Å. A passivation layer is formed on the data wire and the pixel electrode, a redundant data wire is formed thereon, and a redundant gate pad and a redundant gate line connector are formed. The redundant data wire is electrically connected to the data wire through the contact holes in the passivation layer, and the redundant gate pad and the redundant gate line connector are electrically connected to the gate pad and the gate line connector respectively through the contact holes in the passivation layer and the gate insulating layer. The redundant gate line connector and the redundant data line connector are connected to each other to short the gate and the data wires. After an alignment layer is formed and rubbed, the edge of the panel is cut away to remove the gate line connector and the data line connector.
    • 10. 发明授权
    • Liquid crystal displays and manufacturing methods thereof
    • 液晶显示器及其制造方法
    • US06215541B1
    • 2001-04-10
    • US09106226
    • 1998-06-29
    • Jun-Ho SongKyeong-Nam Lee
    • Jun-Ho SongKyeong-Nam Lee
    • G02F11343
    • G02F1/136204
    • A gate wire including a gate line, a gate electrode, a gate pad and a gate line connector and a common signal wire are formed on a substrate, and a gate insulating layer is formed over the gate wire and the common signal wire. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer, a data wire including a source and a drain electrode, a data line, a data pad and a data line connector and a pixel electrode are formed thereon. The thickness of the data wire and the pixel electrode is equal to or less than 500 Å. A passivation layer is formed on the data wire and the pixel electrode, a redundant data wire is formed thereon, and a redundant gate pad and a redundant gate line connector are formed. The redundant data wire is electrically connected to the data wire through the contact holes in the passivation layer, and the redundant gate pad and the redundant gate line connector are electrically connected to the gate pad and the gate line connector respectively through the contact holes in the passivation layer and the gate insulating layer. The redundant gate line connector and the redundant data line connector are connected to each other to short the gate and the data wires. After an alignment layer is formed and rubbed, the edge of the panel is cut away to remove the gate line connector and the data line connector.
    • 在基板上形成包括栅极线,栅电极,栅极焊盘和栅极线连接器以及公共信号线的栅极线,并且在栅极线和公共信号线上形成栅极绝缘层。 在栅极绝缘层上依次形成半导体层和欧姆接触层,在其上形成包括源极和漏极的数据线,数据线,数据焊盘和数据线连接器以及像素电极。 数据线和像素电极的厚度等于或小于500。 在数据线和像素电极上形成钝化层,在其上形成冗余数据线,形成冗余栅极焊盘和冗余栅极线连接器。 冗余数据线通过钝化层中的接触孔与数据线电连接,并且冗余栅极焊盘和冗余栅线连接器分别通过栅极接线孔和栅极线连接器中的接触孔电连接 钝化层和栅极绝缘层。 冗余栅极线连接器和冗余数据线连接器彼此连接以缩短栅极和数据线。 在形成并摩擦对准层之后,切割面板的边缘以移除栅极线连接器和数据线连接器。