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1. 发明授权

US10386718B2 Method for modeling a photoresist profile 有权
公开(公告)号：US10386718B2
公开(公告)日：2019-08-20
申请号：US14789948
申请日：2015-07-01
申请人： Synopsys, Inc.
发明人： Cheng En Wu , Haiqing Wei , Qiaolin Zhang , Hua Song
IPC分类号： G06F17/50 , G03F7/004
摘要： A computer-implemented method includes modeling, using the computer, a photoresist profile in accordance with a magnitude of a gradient of an inhibitor concentration disposed in the photoresist. The photoresist is used during a process to form an integrated circuit. In one embodiment, the computer-implemented method further includes applying the modeled photoresist profile to reduce a distortion in a printed photoresist pattern caused by a response of the photoresist to an electromagnetic wave and/or particle beam during the process.

2. 发明授权

US08826193B1 Detection and removal of self-aligned double patterning artifacts 有权
标题翻译：检测和去除自对准双图案假象
公开(公告)号：US08826193B1
公开(公告)日：2014-09-02
申请号：US13779466
申请日：2013-02-27
申请人： Synopsys, Inc.
发明人： Yuelin Du , Gerard Luk-Pat , Alexander Miloslavsky , Benjamin Painter , James Shiely , Hua Song
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G06F17/5081
摘要： Mask design techniques for detection and removal of undesirable artifacts in SADP processes using multiple patterns are disclosed. Artifacts or spurs result from lithographic and chemical processing of semiconducting wafers. The spurs are undesirable because they can cause unwanted connections or act as electrical antennas. Spurs are detected using rule-based techniques and reduced by modifying lithographic masks. The severity of the detected spurs is determined, again using rule-based techniques. The effects of detected spurs can be reduced by modifying the decomposition of the drawn patterns into the two masks used for lithography. Mandrel masks are modified by add dummy mandrel material, and trim masks are modified by removing trim material. The resulting multi-pattern arrangement is used to fabricate the critical design elements that make up the semiconductor wafers.
摘要翻译：公开了用于检测和去除使用多种图案的SADP工艺中不需要的伪影的掩模设计技术。人造物或杂散是由半导体晶片的平版印刷和化学处理产生的。杂散是不希望的，因为它们可能导致不想要的连接或作为电天线。使用基于规则的技术检测马刺，并通过修改光刻掩模减少马刺。确定检测到的刺激的严重性，再次使用基于规则的技术。通过将绘制图案的分解修改成用于光刻的两个掩模，可以减少检测到的刺激的影响。通过添加虚拟心轴材料修改心轴掩模，并通过去除修剪材料修改修剪蒙版。所得到的多图案布置用于制造构成半导体晶片的关键设计元件。

3. 发明授权

US11200362B2 3D resist profile aware resolution enhancement techniques 有权
公开(公告)号：US11200362B2
公开(公告)日：2021-12-14
申请号：US15488345
申请日：2017-04-14
申请人： Synopsys, Inc.
发明人： Hua Song , Cheng En Wu , James P. Shiely
IPC分类号： G06F30/39 , G06F30/392 , G03F1/36 , G03F1/80 , G03F7/20 , G06F119/18
摘要： Systems and techniques for three-dimension (3D) resist profile aware resolution enhancement techniques are described. 3D resist profile aware resolution enhancement models can be calibrated based on empirical data. Next, the 3D resist profile aware resolution enhancement models can be used in one or more applications, including, but not limited to, lithography verification, etch correction, optical proximity correction, and assist feature placement.

4. 发明授权

US09484186B2 Modeling and correcting short-range and long-range effects in E-beam lithography 有权
标题翻译：在电子束光刻中建模和校正短距离和远距离效应
公开(公告)号：US09484186B2
公开(公告)日：2016-11-01
申请号：US13658630
申请日：2012-10-23
申请人： Synopsys, Inc.
发明人： Hua Song , Irene Y. Su , James P. Shiely
IPC分类号： G06F7/60 , H01J37/317 , G03F1/70
CPC分类号： H01J37/3174 , G03F1/70 , H01J2237/31769 , H01J2237/31788 , H01J2237/31794
摘要： Processes and apparatuses are described for modeling and correcting electron-beam (e-beam) proximity effects during e-beam lithography. An uncalibrated e-beam model, which includes a long-range component and a short-range component, can be calibrated based on one or more test layouts. During correction, a first resist intensity map can be computed based on the long-range component of the calibrated e-beam model and a mask layout. Next, a target pattern in the mask layout can be corrected by, iteratively: (1) computing a second resist intensity map based on the short-range component of the calibrated e-beam model and the target pattern; (2) obtaining a combined resist intensity map by combining the first resist intensity map and the second resist intensity map; and (3) adjusting the target pattern based on the combined resist intensity map and the design intent.
摘要翻译：描述了用于在电子束光刻期间建模和校正电子束（电子束）邻近效应的过程和装置。可以基于一个或多个测试布局来校准包括远程分量和短距离分量的未校准的电子束模型。在校正期间，可以基于校准的电子束模型的长距离分量和掩模布局来计算第一抗蚀剂强度图。接下来，可以通过迭代地校正掩模布局中的目标图案：（1）基于校准的电子束模型的短距离分量和目标图案来计算第二抗蚀剂强度图; （2）通过组合第一抗蚀剂强度图和第二抗蚀剂强度图来获得组合的抗蚀剂强度图; 和（3）基于组合的抗蚀剂强度图和设计意图来调整目标图案。

5. 发明申请

US20140114634A1 MODELING AND CORRECTING SHORT-RANGE AND LONG-RANGE EFFECTS IN E-BEAM LITHOGRAPHY 有权
标题翻译：电子束光刻的建模与校正短距离和长距离效应
公开(公告)号：US20140114634A1
公开(公告)日：2014-04-24
申请号：US13658630
申请日：2012-10-23
申请人： SYNOPSYS, INC.
发明人： Hua Song , Irene Y. Su , James P. Shiely
IPC分类号： G06G7/62
CPC分类号： H01J37/3174 , G03F1/70 , H01J2237/31769 , H01J2237/31788 , H01J2237/31794
摘要： Processes and apparatuses are described for modeling and correcting electron-beam (e-beam) proximity effects during e-beam lithography. An uncalibrated e-beam model, which includes a long-range component and a short-range component, can be calibrated based on one or more test layouts. During correction, a first resist intensity map can be computed based on the long-range component of the calibrated e-beam model and a mask layout. Next, a target pattern in the mask layout can be corrected by, iteratively: (1) computing a second resist intensity map based on the short-range component of the calibrated e-beam model and the target pattern; (2) obtaining a combined resist intensity map by combining the first resist intensity map and the second resist intensity map; and (3) adjusting the target pattern based on the combined resist intensity map and the design intent.
摘要翻译：描述了用于在电子束光刻期间建模和校正电子束（电子束）邻近效应的过程和装置。可以基于一个或多个测试布局来校准包括远程分量和短距离分量的未校准的电子束模型。在校正期间，可以基于校准的电子束模型的长距离分量和掩模布局来计算第一抗蚀剂强度图。接下来，可以通过迭代地校正掩模布局中的目标图案：（1）基于校准的电子束模型的短距离分量和目标图案来计算第二抗蚀剂强度图; （2）通过组合第一抗蚀剂强度图和第二抗蚀剂强度图来获得组合的抗蚀剂强度图; 和（3）基于组合的抗蚀剂强度图和设计意图来调整目标图案。

6. 发明申请

US20170220723A1 3D RESIST PROFILE AWARE RESOLUTION ENHANCEMENT TECHNIQUES 审中-公开
公开(公告)号：US20170220723A1
公开(公告)日：2017-08-03
申请号：US15488345
申请日：2017-04-14
申请人： Synopsys, Inc.
发明人： Hua Song , Cheng En Wu , James P. Shiely
IPC分类号： G06F17/50 , G03F1/36
CPC分类号： G06F17/5072 , G03F1/36 , G03F1/80 , G03F7/70441 , G03F7/705 , G06F17/5068 , G06F2217/12
摘要： Systems and techniques for three-dimension (3D) resist profile aware resolution enhancement techniques are described. 3D resist profile aware resolution enhancement models can be calibrated based on empirical data. Next, the 3D resist profile aware resolution enhancement models can be used in one or more applications, including, but not limited to, lithography verification, etch correction, optical proximity correction, and assist feature placement.

7. 发明申请

US20140245239A1 DETECTION AND REMOVAL OF SELF-ALIGNED DOUBLE PATTERNING ARTIFACTS 有权
标题翻译：自对准双重文字艺术的检测与删除
公开(公告)号：US20140245239A1
公开(公告)日：2014-08-28
申请号：US13779466
申请日：2013-02-27
申请人： SYNOPSYS, INC.
发明人： Yuelin Du , Gerard Luk-Pat , Alexander Miloslavsky , Benjamin Painter , James Shiely , Hua Song
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G06F17/5081
摘要： Mask design techniques for detection and removal of undesirable artifacts in SADP processes using multiple patterns are disclosed. Artifacts or spurs result from lithographic and chemical processing of semiconducting wafers. The spurs are undesirable because they can cause unwanted connections or act as electrical antennas. Spurs are detected using rule-based techniques and reduced by modifying lithographic masks. The severity of the detected spurs is determined, again using rule-based techniques. The effects of detected spurs can be reduced by modifying the decomposition of the drawn patterns into the two masks used for lithography. Mandrel masks are modified by add dummy mandrel material, and trim masks are modified by removing trim material. The resulting multi-pattern arrangement is used to fabricate the critical design elements that make up the semiconductor wafers.
摘要翻译：公开了用于检测和去除使用多种图案的SADP工艺中不需要的伪影的掩模设计技术。人造物或杂散是由半导体晶片的平版印刷和化学处理产生的。杂散是不希望的，因为它们可能导致不想要的连接或作为电天线。使用基于规则的技术检测马刺，并通过修改光刻掩模减少马刺。确定检测到的刺激的严重性，再次使用基于规则的技术。通过将绘制图案的分解修改成用于光刻的两个掩模，可以减少检测到的刺激的影响。通过添加虚拟心轴材料修改心轴掩模，并通过去除修剪材料修改修剪蒙版。所得到的多图案布置用于制造构成半导体晶片的关键设计元件。

8. 发明授权

US08689149B1 Multi-patterning for sharp corner printing 有权
标题翻译：多重图案化，用于锐角转印
公开(公告)号：US08689149B1
公开(公告)日：2014-04-01
申请号：US13740142
申请日：2013-01-11
申请人： Synopsys, Inc.
发明人： Yuelin Du , Hua Song , James Shiely
IPC分类号： G06F17/50
CPC分类号： G03F1/70
摘要： Mask design techniques for sharp corner printing in liquid crystal displays are disclosed using multiple patterns. The viewing angle and color quality of thin film transistor liquid crystal displays are largely dependent upon electrode corner sharpness as patterned in a given metal layer. Depending on design style, critical elements include convex angles, concave angles, or both convex and concave angles. Angle sharpness is dependent upon the resolution limit of a given exposure system. Since critical design element requirements exceed the capabilities of one mask, two or more masks are implemented. The determination of critical pattern features within a given layer identifies angles that are problematic for fabrication. The critical pattern features are decomposed into multiple mask layers. The resulting multi-pattern arrangement is used to fabricate the critical design elements that make up the needed angles.
摘要翻译：使用多种图案公开了用于液晶显示器中锐角拐角印刷的掩模设计技术。薄膜晶体管液晶显示器的视角和颜色质量在很大程度上取决于在给定金属层中图案化的电极角锐度。根据设计风格，关键元素包括凸角，凹角或凸角和凹角。角度锐度取决于给定曝光系统的分辨率极限。由于关键设计元素要求超过一个掩模的能力，因此实现了两个或更多个掩模。确定给定层内的关键图案特征可以确定制造问题的角度。临界图案特征被分解为多个掩模层。所得到的多图案布置用于制造构成所需角度的关键设计元素。

9. 发明授权

US09646127B2 3D resist profile aware etch-bias model 有权
公开(公告)号：US09646127B2
公开(公告)日：2017-05-09
申请号：US14712663
申请日：2015-05-14
申请人： Synopsys, Inc.
发明人： Hua Song , Cheng En Wu , James P. Shiely
IPC分类号： G06F17/50 , G03F1/36 , G03F1/80 , G03F7/20
CPC分类号： G06F17/5072 , G03F1/36 , G03F1/80 , G03F7/70441 , G03F7/705 , G06F17/5068 , G06F2217/12
摘要： Systems and techniques for using a three-dimension (3D) resist profile aware etch-bias model are described. A 3D resist profile aware etch-bias model can be calibrated based on empirical data. Next, the 3D resist profile aware etch-bias model can be used in one or more applications, including, but not limited to, lithography verification, etch correction, optical proximity correction, and assist feature placement.

10. 发明申请

US20160335384A1 3D RESIST PROFILE AWARE ETCH-BIAS MODEL 有权
公开(公告)号：US20160335384A1
公开(公告)日：2016-11-17
申请号：US14712663
申请日：2015-05-14
申请人： Synopsys, Inc.
发明人： Hua Song , Cheng En Wu , James P. Shiely
IPC分类号： G06F17/50 , G03F1/36
CPC分类号： G06F17/5072 , G03F1/36 , G03F1/80 , G03F7/70441 , G03F7/705 , G06F17/5068 , G06F2217/12
摘要： Systems and techniques for using a three-dimension (3D) resist profile aware etch-bias model are described. A 3D resist profile aware etch-bias model can be calibrated based on empirical data. Next, the 3D resist profile aware etch-bias model can be used in one or more applications, including, but not limited to, lithography verification, etch correction, optical proximity correction, and assist feature placement.
摘要翻译：描述了使用三维（3D）抗蚀剂图形感知蚀刻偏压模型的系统和技术。可以基于经验数据校准3D抗蚀剂轮廓感知蚀刻偏压模型。接下来，3D抗蚀剂图案感知蚀刻偏压模型可以用于一个或多个应用中，包括但不限于光刻验证，蚀刻校正，光学邻近校正和辅助特征放置。

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