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1. 发明授权

US10944045B2 Magnetic memory 有权
公开(公告)号：US10944045B2
公开(公告)日：2021-03-09
申请号：US16271112
申请日：2019-02-08
申请人： TDK CORPORATION
发明人： Tomoyuki Sasaki , Yohei Shiokawa , Atsushi Tsumita
IPC分类号： H01L43/04 , G11C11/18 , H01L27/22 , G11C11/16 , H01L43/08 , H01L43/10 , H01L43/14
摘要： A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

2. 发明申请

US20140070891A1 HIGH FREQUENCY AMPLIFIER 审中-公开
标题翻译：高频放大器
公开(公告)号：US20140070891A1
公开(公告)日：2014-03-13
申请号：US14008601
申请日：2012-09-20
申请人： TDK Corporation
发明人： Tomohiko Shibuya , Atsushi Ajioka , Atsushi Tsumita
IPC分类号： H03F1/32 , H03F3/195
CPC分类号： H03F1/32 , H03F1/0272 , H03F1/56 , H03F3/195 , H03F3/211 , H03F3/245 , H03F2200/222 , H03F2200/387 , H03F2203/21106 , H03F2203/21142
摘要： To prevent a wrap-around signal from an output detection circuit unit that occurs when commonality is achieved between the power supply of the output detection circuit unit and the bias power supply of a power amplification unit. When commonality is achieved between the power supply of a diode of an output detection circuit unit and the power supply of a bias circuit, a resonance circuit is connected between the bias circuit and the output detection circuit unit, thereby preventing a wrap-around signal from the output side of a power amplification transistor from being input to the input side of the power amplification transistor.
摘要翻译：为了防止在输出检测电路单元的电源和功率放大单元的偏置电源之间达到通用性时发生的输出检测电路单元的环绕信号。当在输出检测电路单元的二极管的电源和偏置电路的电源之间达到通用性时，谐振电路连接在偏置电路和输出检测电路单元之间，从而防止了环绕信号功率放大晶体管的输出侧被输入到功率放大晶体管的输入侧。

3. 发明授权

US10529914B2 Magnetic memory 有权
公开(公告)号：US10529914B2
公开(公告)日：2020-01-07
申请号：US16058237
申请日：2018-08-08
申请人： TDK CORPORATION
发明人： Yuji Kakinuma , Atsushi Tsumita
IPC分类号： G11C11/00 , H01L43/02 , H01L27/22 , G11C11/16 , H01F10/32 , G11C11/18 , H01L43/06 , H01L43/08
摘要： Provided is a magnetic memory including: a first bit line, a second bit line, and a third bit line; a word line; a first magnetoresistance effect element; a first transistor; a second magnetoresistance effect element; and a second transistor, wherein free layers of the first and second magnetoresistance effect elements and the second bit line are connected, a fixed layer of the first magnetoresistance effect element and a source terminal of the first transistor are connected, a drain terminal of the first transistor and the first bit line are connected, a fixed layer of the second magnetoresistance effect element and a drain terminal of the second transistor are connected, a source terminal of the second transistor and the third bit line are connected, and the word line is connected to each of a gate terminal of the first transistor and a gate terminal of the second transistor.

4. 发明授权

US09184706B2 High-frequency amplifier 有权
标题翻译：高频放大器
公开(公告)号：US09184706B2
公开(公告)日：2015-11-10
申请号：US14150219
申请日：2014-01-08
申请人： TDK CORPORATION
发明人： Tomohiko Shibuya , Atsushi Ajioka , Sadaharu Yoneda , Atsushi Tsumita
IPC分类号： H03G3/20 , H03F3/193 , H03F1/02
CPC分类号： H03F3/193 , H03F1/0266 , H03F2200/408
摘要： Since a high-frequency signal that is output from a high-frequency oscillator circuit section is detected in a detector circuit and a bias of a negative voltage is supplied from a bias circuit section to the high-frequency amplifier circuit section with a detection voltage that is detected, a negative power supply circuit such as a DC/DC converter or a peripheral circuit is not required, and since a negative bias voltage can be supplied to a high-frequency amplifier circuit, downsizing can be achieved with a low cost.
摘要翻译：由于在检测器电路中检测到从高频振荡电路部分输出的高频信号，并且从偏置电路部分向高频放大器电路部分提供负电压的偏压，检测电压为，则不需要诸如DC / DC转换器或外围电路的负电源电路，并且由于可以向高频放大器电路提供负偏压，因此可以以低成本实现小型化。

5. 发明授权

US08896380B2 High frequency amplifier 有权
标题翻译：高频放大器
公开(公告)号：US08896380B2
公开(公告)日：2014-11-25
申请号：US13852159
申请日：2013-03-28
申请人： TDK Corporation
发明人： Tomihiko Shibuya , Atsushi Ajioka , Atsushi Tsumita
IPC分类号： H03F3/04 , H03F3/19 , H01L23/66
CPC分类号： H03F3/19 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： A high frequency amplifier is characterized wherein a power amplification element and at least one of temperature compensation elements are adjacently provided on a first semiconductor layer, a first wiring pattern connected to the power amplification element, a second wiring pattern connected to the temperature compensation element, and a ground electrode are provided on at least one of second semiconductor layers existing in layers different from the first semiconductor layer, and the ground electrode is formed on the second semiconductor layer corresponding to a region that substantially projects a crevice part on which the temperature compensation element and the power amplification element are provided, on the same plane as the first semiconductor element.
摘要翻译：一种高频放大器，其特征在于功率放大元件和温度补偿元件中的至少一个相邻地设置在第一半导体层上，连接到功率放大元件的第一布线图案，连接到温度补偿元件的第二布线图案，并且在与第一半导体层不同的层中存在的第二半导体层中的至少一个上设置接地电极，并且在第二半导体层上形成接地电极，所述第二半导体层对应于基本上突出有温度补偿的缝隙部分的区域元件和功率放大元件设置在与第一半导体元件相同的平面上。

6. 发明授权

US11145345B2 Storage element, semiconductor device, magnetic recording array, and method of producing storage element 有权
公开(公告)号：US11145345B2
公开(公告)日：2021-10-12
申请号：US16829188
申请日：2020-03-25
申请人： TDK CORPORATION
发明人： Atsushi Tsumita , Yohei Shiokawa , Eiji Komura
IPC分类号： G11C11/16 , H01L43/10 , H01L43/12 , H01L43/08 , H01L27/11597
摘要： A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction; an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction; and a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode.

7. 发明授权

US09530437B2 Magnetic head, head gimbal assembly, and magnetic recording and reproducing apparatus 有权
标题翻译：磁头，头万向架组件和磁记录和再现装置
公开(公告)号：US09530437B2
公开(公告)日：2016-12-27
申请号：US14847716
申请日：2015-09-08
申请人： TDK CORPORATION
发明人： Tomohiko Shibuya , Atsushi Ajioka , Sadaharu Yoneda , Atsushi Tsumita
IPC分类号： G11B5/02 , G11B5/31 , G11B5/48 , G11B5/00
CPC分类号： G11B5/02 , G11B5/314 , G11B5/4853 , G11B2005/0024
摘要： A magnetic head has a magnetic head slider that includes a recording element that generates a recording signal magnetic field, a microwave magnetic field generating element that generates a microwave magnetic field, a terminal electrode, and a first transmission line that interconnects the terminal electrode and the microwave magnetic field generating element. A second transmission line is connected to the terminal electrode, the second transmission line being used to transmit a microwave signal from the outside of the magnetic head slider to the magnetic head slider. A capacitor connected to the first transmission line is provided between the terminal electrode and the microwave magnetic field generating element. Accordingly, in the magnetic head, a microwave signal is efficiently propagated.
摘要翻译：磁头具有磁头滑动器，其包括产生记录信号磁场的记录元件，产生微波磁场的微波磁场产生元件，端子电极和将端子电极和微波磁场产生元件。第二传输线连接到端子电极，第二传输线用于将微波信号从磁头滑块的外部传输到磁头滑块。连接到第一传输线的电容器设置在端子电极和微波磁场产生元件之间。因此，在磁头中，有效地传播微波信号。

8. 发明授权

US09252716B2 High-frequency amplifier circuit, semiconductor device, and magnetic recording and reproducing device 有权
标题翻译：高频放大器电路，半导体器件和磁记录再生装置
公开(公告)号：US09252716B2
公开(公告)日：2016-02-02
申请号：US14250118
申请日：2014-04-10
申请人： TDK CORPORATION
发明人： Sadaharu Yoneda , Atsushi Ajioka , Tomohiko Shibuya , Atsushi Tsumita
IPC分类号： H03F3/45 , H03F1/08 , H03F3/19 , H03F3/26
CPC分类号： H03F1/083 , H03F3/19 , H03F3/26 , H03F3/45475 , H03F3/45928 , H03F2200/06 , H03F2200/405 , H03F2200/451 , H03F2200/537
摘要： A high-frequency amplifier circuit includes a balanced-unbalanced converter converting a single-ended signal into differential signals. The output of a first amplifier amplifying the single-ended signal is connected to the signal terminal on the unbalanced side of the balanced-unbalanced converter. The input of a second amplifier amplifying one of the differential signals is connected to one signal terminal on the balanced side of the balanced-unbalanced converter. The input of a third amplifier amplifying another of the differential signals is connected to another signal terminal on the balanced side of the balanced-unbalanced converter. An impedance element is inserted between an element on the balanced side of the balanced-unbalanced converter and a ground.
摘要翻译：高频放大器电路包括将单端信号转换成差分信号的平衡不平衡转换器。放大单端信号的第一放大器的输出连接到平衡不平衡转换器的不平衡侧上的信号端子。放大其中一个差分信号的第二放大器的输入连接到平衡不平衡转换器的平衡侧上的一个信号端。放大另一个差分信号的第三放大器的输入连接到平衡不平衡转换器的平衡侧上的另一个信号端子。阻抗元件插入在平衡不平衡转换器的平衡侧上的元件和地之间。

9. 发明授权

US11056641B2 Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory 有权
公开(公告)号：US11056641B2
公开(公告)日：2021-07-06
申请号：US16578714
申请日：2019-09-23
申请人： TDK CORPORATION
发明人： Atsushi Tsumita , Yohei Shiokawa , Tomoyuki Sasaki
IPC分类号： H01L43/04 , H01L27/22 , G11C11/16 , H01F10/32 , G11C11/18 , H01L43/10
摘要： A spin-orbit-torque magnetization rotational element includes: a first ferromagnetic layer; and a spin-orbit torque wiring in which a first surface faces the first ferromagnetic layer and a long axis extends in a first direction when viewed in plan view from a lamination direction of the first ferromagnetic layer, wherein the first surface spreads along a reference plane orthogonal to the lamination direction of the first ferromagnetic layer, the spin-orbit torque wiring contains a first virtual cross-section which passes through a first end of the first ferromagnetic layer in the first direction and is orthogonal to the first direction and a second virtual cross-section which passes through a second end of the first ferromagnetic layer in the first direction and is orthogonal to the first direction, and an area of the first virtual cross-section is different from an area of the second virtual cross-section.

10. 发明授权

US10205088B2 Magnetic memory 有权
公开(公告)号：US10205088B2
公开(公告)日：2019-02-12
申请号：US15711506
申请日：2017-09-21
申请人： TDK CORPORATION
发明人： Tomoyuki Sasaki , Yohei Shiokawa , Atsushi Tsumita
IPC分类号： H01L43/04 , G11C11/16 , H01L43/08 , H01L43/10 , H01L43/14 , G11C11/18
摘要： A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

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