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    • 4. 发明授权
    • R-T-B based permanent magnet
    • R-T-B型永久磁铁
    • US09396852B2
    • 2016-07-19
    • US14261516
    • 2014-04-25
    • TDK CORPORATION
    • Ryuji HashimotoKenichi SuzukiKyung-ku Choi
    • H01F1/057H01F10/12
    • H01F1/057H01F10/126
    • The present invention provides such a permanent magnet that its magnetic properties will not significantly decrease and it can be prepared at a lower temperature, compared to conventional R-T-B based permanent magnets. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Ce-T-B based crystal layer can be formed by alternatively stacking the R1-T-B based crystal layer and the Ce-T-B based crystal layer. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the crystallization temperature can be lowered by the Ce-T-B based crystal layer.
    • 本发明提供这样的永磁体,其磁性能不会显着降低,并且与常规的R-T-B基永磁体相比可以在较低的温度下制备。 在基于R-T-B的结构中,可以通过交替堆叠R1-T-B基晶体层和Ce-T-B基晶体层来形成R1-T-B基晶体层和Ce-T-B基晶体层的堆叠结构。 以这种方式,可以通过Ce-T-B类结晶层降低结晶温度,从而保持R1-T-B系晶体层的高磁各向异性场。
    • 9. 发明授权
    • Magnetic measurement device
    • 磁性测量装置
    • US09354285B2
    • 2016-05-31
    • US14374786
    • 2012-12-13
    • TDK CORPORATION
    • Kenichi SuzukiTsutomu ChikamatsuAkio OgawaKyung-ku ChoiRyuji Hashimoto
    • G01R33/12G01R33/10
    • G01R33/12G01R33/10G01R33/1215
    • A magnetic measurement device which measures coercivity and coercivity distribution in a microregion of a thin plate magnetic sample with high coercivity. A magnetic sample is applied with a magnetic field in a first direction and magnetized, a second magnetic field is applied in a direction opposite to the first, a measuring part scans the sample, measuring magnetic flux leakage due to remnant magnetization in the sample. The intensity of the second magnetic field is gradually increased while the measuring part repeats the measurement to obtain the second magnetic field wherein the magnitude of the leakage from the sample reaches the maximum level, and when a magnetic field equivalent to the coercivity is applied to the sample and about half of the magnetization is reversed, the sample's coercivity is obtained based on the determination that the demagnetizing field Hd reaches the minimum level and the leakage reaches the maximum level.
    • 一种磁测量装置,其测量具有高矫顽力的薄板磁性样品的微区域中的矫顽力和矫顽力分布。 磁性样品沿第一方向施加磁场并被磁化,在与第一方向相反的方向上施加第二磁场,测量部分扫描样品,测量样品中残留磁化的磁通量泄漏。 第二磁场的强度逐渐增加,而测量部分重复测量以获得第二磁场,其中来自样品的泄漏的大小达到最大电平,并且当将等于矫顽力的磁场施加到 样品中约一半的磁化反转,基于去磁场Hd达到最小值并且漏电达到最大值的确定获得样品的矫顽力。
    • 10. 发明授权
    • R-T-B based permanent magnet
    • R-T-B型永久磁铁
    • US09111674B2
    • 2015-08-18
    • US14257206
    • 2014-04-21
    • TDK CORPORATION
    • Ryuji HashimotoKenichi SuzukiKyung-Ku Choi
    • H01F1/057H01F10/12
    • H01F1/057H01F10/126
    • The present invention provides a permanent magnet whose magnetic properties will not be significantly decreased and which is excellent in the temperature properties compared to the existing R-T-B based permanent magnet. In the R-T-B based structure, a stack structure of R1-T-B based crystallizing layer and (Y,Ce)-T-B based crystallizing layer can be formed by alternatively stacking R1-T-B and (Y,Ce)-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystallizing layer can be maintained while an improved temperature coefficient of the (Y,Ce)-T-B based crystallizing layer can be obtained. Further, a high coercivity can be obtained by adding the Ce-T-B based crystallizing layer with a low lattice distortion to the Y-T-B based crystallizing layer.
    • 本发明提供一种与现有的R-T-B系永久磁铁相比,其磁特性不会显着降低且温度特性优异的永磁体。 在基于R-T-B的结构中,可以通过交替堆叠R1-T-B和(Y,Ce)-T-B来形成R1-T-B系结晶层和(Y,Ce)-T-B系结晶层的堆叠结构。 以这种方式,可以保持基于(Y,Ce)-T-B的结晶层的温度系数提高的R1-T-B系结晶层的高磁各向异性场。 此外,通过向基于Y-T-B的结晶层添加具有低晶格畸变的Ce-T-B系结晶层,可以获得高的矫顽力。