专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10756404B2 Magnetoresistance effect device and magnetoresistance effect module 有权
公开(公告)号：US10756404B2
公开(公告)日：2020-08-25
申请号：US16262358
申请日：2019-01-30
申请人： TDK CORPORATION
发明人： Tsuyoshi Suzuki , Shinji Hara
IPC分类号： H01P1/218
摘要： A magnetoresistance effect device includes first and second ports, first and second circuit units, and reference potential and DC applying terminals. The first and second circuit units respectively include first and second magnetoresistance effect elements and first and second conductors. In the second conductor, the positional relationship between first and second end faces respectively on the first and opposite conductor sides in the first magnetoresistance effect element with respect to a flowing direction of a direct current flowing inside the first magnetoresistance effect element and the positional relationship between first and second end faces respectively on the second and opposite conductor sides in the second magnetoresistance effect element with respect to a flowing direction of a direct current flowing in the second magnetoresistance effect element are opposite each other. The relative angle between the first and second circuit units in a predetermined cross product direction is 90 degrees or less.

2. 发明授权

US10593459B2 Magnetoresistance effect device and magnetoresistance effect module 有权
公开(公告)号：US10593459B2
公开(公告)日：2020-03-17
申请号：US16306935
申请日：2017-09-14
申请人： TDK CORPORATION
发明人： Tsuyoshi Suzuki
IPC分类号： H01F10/32 , H01L43/08 , H01L27/22 , H03H2/00 , H03H11/04 , H01L43/02
摘要： A magnetoresistance effect device includes: a first magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer, and a first spacer layer, a metal layer, a first electrode, an input terminal, an output terminal, and a reference potential terminal, wherein the first ferromagnetic layer, the first spacer layer, the second ferromagnetic layer, and the first electrode are disposed in this order, the second ferromagnetic layer is in electrical contact with the first electrode, which is connected to the output terminal configured to output a high-frequency signal, the metal layer is connected to the input and reference potential terminals so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal, which is in electrical contact with the first ferromagnetic layer, and the first magnetoresistance effect element has an application terminal configured to apply a DC current or a DC voltage.

3. 发明授权

US10483458B2 Magnetoresistive effect device 有权
公开(公告)号：US10483458B2
公开(公告)日：2019-11-19
申请号：US15764848
申请日：2016-06-02
申请人： TDK CORPORATION
发明人： Junichiro Urabe , Tetsuya Shibata , Atsushi Shimura , Takekazu Yamane , Tsuyoshi Suzuki
IPC分类号： H01L43/08 , H01F10/32 , H01L27/22 , H03H11/04 , H03H2/00 , H01L43/02
摘要： A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.

4. 发明授权

US10332666B2 Magnetoresistance effect device and high frequency device 有权
公开(公告)号：US10332666B2
公开(公告)日：2019-06-25
申请号：US15962286
申请日：2018-04-25
申请人： TDK CORPORATION
发明人： Takekazu Yamane , Junichiro Urabe , Tsuyoshi Suzuki , Atsushi Shimura
IPC分类号： H01F10/32 , H03H11/04 , G11C11/02 , H01P1/218 , H03H2/00 , G11C11/16 , G11C11/15
摘要： The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.

5. 发明授权

US10957962B2 Magnetoresistive effect device 有权
公开(公告)号：US10957962B2
公开(公告)日：2021-03-23
申请号：US16340471
申请日：2017-10-23
申请人： TDK CORPORATION
发明人： Takekazu Yamane , Tetsuya Shibata , Tsuyoshi Suzuki , Junichiro Urabe , Atsushi Shimura
IPC分类号： H01P1/218 , H03B15/00 , G11B5/39 , H01L43/08
摘要： A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.

6. 发明授权

US10608309B2 Magnetoresistance effect device and high-frequency device 有权
公开(公告)号：US10608309B2
公开(公告)日：2020-03-31
申请号：US15962587
申请日：2018-04-25
申请人： TDK CORPORATION
发明人： Takekazu Yamane , Junichiro Urabe , Tsuyoshi Suzuki , Atsushi Shimura
IPC分类号： H01P1/218 , H01P3/08 , H01P5/12 , H01F10/32
摘要： A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.

7. 发明授权

US09595916B2 Magnetoresistive effect oscillator 有权
标题翻译：磁阻效应振荡器
公开(公告)号：US09595916B2
公开(公告)日：2017-03-14
申请号：US14515864
申请日：2014-10-16
申请人： TDK CORPORATION
发明人： Tsuyoshi Suzuki , Eiji Suzuki
IPC分类号： H03B17/00 , H03B15/00
CPC分类号： H03B15/006 , H03B15/00
摘要： A magnetoresistive effect oscillator is provided which can realize a rise or a fall of oscillation at a higher speed. In the magnetoresistive effect oscillator, at the rise, a current having a first current density, which is larger than a critical current density for oscillation, is applied, and thereafter a current having a second current density, which is less than the current density corresponding to the first current density and not less than the critical current density for oscillation, is applied such that the magnetoresistive effect element oscillates at a predetermined frequency. In the magnetoresistive effect oscillator, at the fall, starting from the state where a first current density is applied to hold the magnetoresistive effect element in an oscillating condition, a current having a second current density and having polarity reversed to that of the first current density is applied such that the oscillation disappears.
摘要翻译：提供了一种能够以更高速度实现振荡的上升或下降的磁阻效应振荡器。在磁阻效应振荡器中，在上升时，施加具有比用于振荡的临界电流密度大的第一电流密度的电流，之后具有小于对应于电流密度的第二电流密度的电流施加到第一电流密度并且不小于用于振荡的临界电流密度，使得磁阻效应元件以预定频率振荡。在磁阻效应振荡器中，在从施加第一电流密度的状态开始的磁阻效应振荡器中，将磁阻效应元件保持在振荡状态，具有第二电流密度并具有与第一电流密度相反的极性的电流以使得振荡消失。

8. 发明授权

US11005035B2 Magnetoresistive effect element 有权
公开(公告)号：US11005035B2
公开(公告)日：2021-05-11
申请号：US16364905
申请日：2019-03-26
申请人： TDK CORPORATION
发明人： Tsuyoshi Suzuki , Katsuyuki Nakada , Shinto Ichikawa
IPC分类号： H01L43/10 , H01L43/02 , H01L43/08
摘要： A magnetoresistive effect element includes a first ferromagnetic layer and a tunnel barrier layer. The tunnel barrier layer has a main body region and a first interface region. The main body region has an oxide material of a first spinel structure represented by a general formula LM2O4. The first interface region has at least one element X selected from a group consisting of elements having a valence of 2 and elements having a valence of 3 excluding Al and has an oxide material of a second spinel structure represented by a general formula DG2O4(D represents one or more kinds of elements including Mg or the element X, and G represents one or more kinds of elements including Al or the element X). A content of the element X contained in the first interface region is larger than that of the element X contained in the main body region.

9. 发明授权

US10885934B2 Magnetoresistance effect device with shaped high-frequency signal line overlapping magnetoresistance effect element 有权
公开(公告)号：US10885934B2
公开(公告)日：2021-01-05
申请号：US16364534
申请日：2019-03-26
申请人： TDK CORPORATION
发明人： Naomichi Degawa , Tsuyoshi Suzuki
IPC分类号： G11B5/39 , G01R33/09 , H01L43/08 , H01L43/10 , H03H9/22 , H01F10/32 , H01L43/02 , G11B5/31 , B82Y25/00
摘要： Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.

10. 发明授权

US10074688B2 Magnetoresistive effect device with first and second magnetoresistive effect elements having opposite current flows relative to the ordering of the layers of the elements 有权
公开(公告)号：US10074688B2
公开(公告)日：2018-09-11
申请号：US15662697
申请日：2017-07-28
申请人： TDK CORPORATION
发明人： Tetsuya Shibata , Tsuyoshi Suzuki , Junichiro Urabe , Takekazu Yamane , Atsushi Shimura
IPC分类号： G11B5/39 , H01L27/22 , H01L43/02 , H01L43/08 , H03H1/00 , H03H7/01
CPC分类号： H01L27/22 , G11B5/3903 , G11B5/3945 , H01L43/02 , H01L43/08 , H03H1/0007 , H03H2/00 , H03H7/0153
摘要： A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式