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1. 发明申请

US20230118483A1 Substrate Processing Method and Substrate Processing Apparatus 有权
公开(公告)号：US20230118483A1
公开(公告)日：2023-04-20
申请号：US18082674
申请日：2022-12-16
申请人： TOKYO ELECTRON LIMITED
发明人： Kohei FUKUSHIMA
IPC分类号： C23C16/52 , C23C16/455 , H01L21/687 , C23C16/458 , H01L21/673 , C23C16/40 , H01L21/67
摘要： A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

2. 发明申请

US20150376789A1 VERTICAL HEAT TREATMENT APPARATUS AND METHOD OF OPERATING VERTICAL HEAT TREATMENT APPARATUS 审中-公开
标题翻译：立式热处理装置及其操作方法
公开(公告)号：US20150376789A1
公开(公告)日：2015-12-31
申请号：US14845673
申请日：2015-09-04
申请人： TOKYO ELECTRON LIMITED
发明人： Yutaka MOTOYAMA , Kohei FUKUSHIMA , Masanobu MATSUNAGA , Keiji TABUKI , Yamato TONEGAWA
IPC分类号： C23C16/455 , H01L21/02 , C23C16/458
CPC分类号： C23C16/45587 , C23C16/345 , C23C16/45542 , C23C16/45578 , C23C16/4581 , C23C16/4583 , C23C16/46 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： A vertical heat treatment apparatus includes: a gas supply part that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members arranged above and below a region in which target substrates are disposed. The gas distribution adjusting members include a first plate-shaped member with convex and concave portions and a second plate-shaped member with convex and concave portions, the first plate-shaped member and the second plate-shaped member being arranged above and below each other, and the first plate-shaped member and the second plate-shaped member being arranged above a bottom plate of a substrate holding and supporting part and below a ceiling plate of a substrate holding and supporting part. The first plate-shaped member has a first surface area and the second plate-shaped member has a second surface area different from the first surface area.
摘要翻译：一种立式热处理装置包括：将成膜气体供给到反应室内的气体供给部; 以及气体分配调节构件，其布置在目标基板的区域的上方和下方。气体分配调节构件包括具有凸凹部的第一板状构件和具有凸部和凹部的第二板状构件，第一板状构件和第二板状构件彼此上下配置并且第一板状构件和第二板状构件布置在基板保持支撑部的底板的上方和基板保持支撑部的顶板的下方。第一板状构件具有第一表面区域，第二板状构件具有与第一表面区域不同的第二表面区域。

3. 发明申请

US20230119730A1 Substrate Processing Method and Substrate Processing Apparatus 有权
公开(公告)号：US20230119730A1
公开(公告)日：2023-04-20
申请号：US18082670
申请日：2022-12-16
申请人： TOKYO ELECTRON LIMITED
发明人： Kohei FUKUSHIMA
IPC分类号： C23C16/52 , C23C16/455 , H01L21/687 , C23C16/458 , H01L21/673 , C23C16/40 , H01L21/67
摘要： A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

4. 发明申请

US20150267293A1 OPERATING METHOD OF VERTICAL HEAT TREATMENT APPARATUS, STORAGE MEDIUM, AND VERTICAL HEAT TREATMENT APPARATUS 有权
标题翻译：垂直加热处理设备，储存介质和垂直热处理设备的操作方法
公开(公告)号：US20150267293A1
公开(公告)日：2015-09-24
申请号：US14664986
申请日：2015-03-23
申请人： TOKYO ELECTRON LIMITED
发明人： Yutaka MOTOYAMA , Kohei FUKUSHIMA , Keisuke SUZUKI , Hiromi TAKAHASHI
IPC分类号： C23C16/44 , C23C16/458 , C23C16/455 , C23C16/46
CPC分类号： C23C16/4411 , C23C16/4401 , C23C16/45546 , C23C16/46
摘要： An operating method of a vertical heat treatment apparatus which performs a film forming process by keeping the interior of a vertical reaction tube surrounded by a heating mechanism at a vacuum atmosphere and by supplying film forming gases to substrates accommodated within the reaction tube, includes: performing a film forming process with respect to the substrates by carrying a substrate holder holding a plurality of substrates in a shelf form into the reaction tube; carrying out the substrate holder from the reaction tube; and carrying a cooling jig into the reaction tube to cool an inner wall of the reaction tube so as to peel a thin film adhering to the inner wall of the reaction tube by a thermal stress and so as to collect the thin film in the cooling jig by thermophoresis.
摘要翻译：一种垂直热处理装置的操作方法，其通过将由加热机构包围的垂直反应管的内部保持在真空气氛下并通过向容纳在反应管内的基板供给成膜气体而进行成膜处理的方法包括：执行通过将保持多个基板的基板保持器保持在反应管中，相对于基板的成膜工艺; 从反应管中进行基板保持器; 并将冷却夹具装入反应管中以冷却反应管的内壁，以便通过热应力剥离附着在反应管内壁上的薄膜，并将薄膜收集在冷却夹具中通过热泳。

5. 发明申请

US20140295082A1 DRIVING METHOD OF VERTICAL HEAT TREATMENT APPARATUS, STORAGE MEDIUM AND VERTICAL HEAT TREATMENT APPARATUS 有权
标题翻译：垂直热处理装置的驱动方法，储存介质和垂直热处理装置
公开(公告)号：US20140295082A1
公开(公告)日：2014-10-02
申请号：US14229493
申请日：2014-03-28
申请人： TOKYO ELECTRON LIMITED
发明人： Yutaka MOTOYAMA , Keisuke SUZUKI , Kohei FUKUSHIMA , Shingo HISHIYA
IPC分类号： C23C16/44 , B05C5/02
CPC分类号： B05C5/02 , C23C16/4405 , C23C16/4408 , H01L21/67109 , H01L21/67757
摘要： A driving method of a vertical heat treatment apparatus having a vertical reaction container with a heating part installed includes: performing a process of loading wafers by a substrate holder support to the reaction container; performing a film forming process of storing a first gas at a storage unit and pressurizing the first gas, and alternatively performing a step of supplying the first gas to the vacuum atmosphere reaction container and a step of supplying the second gas to the reaction container; subsequently performing a purge process of unloading the substrate holder support and supplying a purge gas into the reaction container to forcibly peel off a thin film attached to the reaction container; and while the purge process is performed, performing a process of repeating storing the purge gas at the storage unit, pressurizing the gas and discharging the gas into the reaction container.
摘要翻译：具有安装有加热部件的立式反应容器的立式热处理装置的驱动方法包括：进行将基板保持架支撑体的晶片装载到反应容器的处理; 执行在存储单元处存储第一气体并对第一气体加压的成膜过程，或者执行将第一气体供应到真空气氛反应容器的步骤和将第二气体供应到反应容器的步骤; 随后执行卸载衬底保持器支撑件并将清洗气体供应到反应容器中以强制剥离附着到反应容器上的薄膜的吹扫过程; 并且在进行清洗处理的同时，进行重复将清洗气体储存在储存单元处的过程，对气体加压并将气体排出到反应容器中。

6. 发明申请

US20190093230A1 Substrate Processing Method and Substrate Processing Apparatus 审中-公开
公开(公告)号：US20190093230A1
公开(公告)日：2019-03-28
申请号：US16136689
申请日：2018-09-20
申请人： TOKYO ELECTRON LIMITED
发明人： Kohei FUKUSHIMA
IPC分类号： C23C16/52 , C23C16/455 , C23C16/458 , H01L21/673 , H01L21/687
摘要： A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

7. 发明申请

US20160024654A1 Film Forming Apparatus 审中-公开
标题翻译：成膜装置
公开(公告)号：US20160024654A1
公开(公告)日：2016-01-28
申请号：US14809837
申请日：2015-07-27
申请人： TOKYO ELECTRON LIMITED
发明人： Kohei FUKUSHIMA , Yutaka MOTOYAMA , Pao-Hwa CHOU
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/4583 , C23C16/345 , C23C16/45542 , C23C16/45544
摘要： A film forming apparatus includes a first and second source gas suppliers configured to limitedly supply a source gas only to a first and second substrate areas, respectively, a reaction gas supplier configured to supply a reaction gas to the first substrate area and the second substrate area, a purge gas supplier configured to supply a purge gas for preventing the source gas supplied to one of the first and second substrate areas from being supplied to the other substrate area, a division-purpose substrate held between the first and second substrate areas in a substrate holding part, and a control part configured to output a control signal such that a first cycle including supplying the source gas and the reaction gas to the first substrate area and a second cycle including supplying the source gas and the reaction gas to the second substrate area are each performed plural times.
摘要翻译：一种成膜设备包括：第一和第二源气体供应器，其分别被配置为仅将源气体仅分别供应到第一和第二基底区域;反应气体供应器，被配置为将反应气体供应到第一基底区域和第二基底区域提供一种净化气体供给器，被配置为提供用于防止供应到第一和第二基板区域中的一个的源气体的吹扫气体被供应到另一个基板区域，分隔用基板被保持在第一和第二基板区域之间基板保持部，以及控制部，其配置为输出控制信号，使得包括将源气体和反应气体供应到第一基板区域的第一循环和包括将源气体和反应气体供应到第二基板的第二循环区域分别进行多次。

8. 发明申请

US20150259799A1 VERTICAL HEAT TREATMENT APPARATUS, METHOD OF OPERATING VERTICAL HEAT TREATMENT APPARATUS, AND STORAGE MEDIUM 审中-公开
标题翻译：垂直热处理设备，垂直加热处理设备的操作方法和存储介质
公开(公告)号：US20150259799A1
公开(公告)日：2015-09-17
申请号：US14642230
申请日：2015-03-09
申请人： TOKYO ELECTRON LIMITED
发明人： Yutaka MOTOYAMA , Kohei FUKUSHIMA , Masanobu MATSUNAGA , Pao-Hwa CHOU
IPC分类号： C23C16/46 , C23C16/458 , H01L21/02 , C23C16/455
CPC分类号： C23C16/46 , C23C16/345 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： A vertical heat treatment apparatus for performing a film forming treatment on a plurality of target substrates having a surface with convex and concave portions includes: a gas supply unit that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members made of quartz and installed to be positioned respectively above and below a region in which the plurality of target substrates held and supported by a substrate holding and supporting unit are disposed, wherein if S is a surface area per unit region of the gas distribution adjusting members and S0 is a surface area per unit region obtained by dividing a surface area of the target substrate by a surface area calculated based on an external dimension of the target substrate, a value obtained by dividing S by S0 (S/S0) is set to be 0.8 or more.
摘要翻译：在具有凸凹部的表面的多个目标基板上进行成膜处理的立式热处理装置包括：将成膜气体供给到反应室内的气体供给部，和由石英制成的气体分配调节构件，并且被设置为分别位于由基板保持和支撑单元保持和支撑的多个目标基板的上方和下方，其中如果S是每单位区域的表面积气体分布调整部件S0是通过将目标基板的表面积除以基于目标基板的外部尺寸计算出的面积而得到的每单位区域的表面积，将S除以S0（S / S0）设定为0.8以上。

9. 发明申请

US20200058526A1 VERTICAL HEAT TREATMENT APPARATUS 审中-公开
公开(公告)号：US20200058526A1
公开(公告)日：2020-02-20
申请号：US16661335
申请日：2019-10-23
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroki IRIUDA , Kohei FUKUSHIMA
IPC分类号： H01L21/67 , C23C16/458 , H01L21/673 , C23C16/455
摘要： A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

10. 发明申请

US20180258528A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180258528A1
公开(公告)日：2018-09-13
申请号：US15911501
申请日：2018-03-05
申请人： TOKYO ELECTRON LIMITED
发明人： Kohei FUKUSHIMA , Tsuneyuki OKABE
IPC分类号： C23C16/455 , C23C16/458 , H01L21/673 , H01L21/687 , C23C16/44
CPC分类号： C23C16/45502 , C23C16/4409 , C23C16/4412 , C23C16/45578 , C23C16/45589 , C23C16/4584 , H01L21/67109 , H01L21/67253 , H01L21/67309 , H01L21/68771
摘要： A substrate processing apparatus includes an inner tube configured to accommodate a plurality of substrates and having a first opening portion; an outer tube surrounding the inner tube; a movable wall movably provided in the inner tube or between the inner tube and the outer tube and having a second opening portion; a gas supply part configured to supply a processing gas into the inner tube; an exhaust part provided outside the movable wall and configured to exhaust the processing gas supplied into the inner tube through the first opening portion and the second opening portion; and a pressure detection part configured to detect a pressure inside the inner tube.

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