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1. 发明授权

US09472404B2 Doping method, doping apparatus and method of manufacturing semiconductor device 有权
标题翻译：掺杂法，掺杂装置及制造半导体器件的方法
公开(公告)号：US09472404B2
公开(公告)日：2016-10-18
申请号：US14582417
申请日：2014-12-24
申请人： TOKYO ELECTRON LIMITED
发明人： Hirokazu Ueda , Masahiro Oka , Yasuhiro Sugimoto , Masahiro Horigome , Yuuki Kobayashi
IPC分类号： H01L21/26 , H01L21/223 , H01J37/32
CPC分类号： H01L21/2236 , H01J37/32192 , H01J37/32412 , H01L29/66803
摘要： Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing.
摘要翻译：公开了一种等离子体掺杂装置和等离子体掺杂方法，用于通过将掺杂剂离子注入到处理目标衬底中来对处理目标衬底进行掺杂。等离子体掺杂方法包括通过使用微波产生等离子体在保持在处理容器内的保持单元上的处理目标衬底上进行等离子体掺杂处理。等离子体掺杂方法还包括对经过等离子体掺杂处理的处理对象基板进行的退火处理。

2. 发明授权

US09029249B2 Plasma doping apparatus and plasma doping method 有权
标题翻译：等离子体掺杂装置和等离子体掺杂法
公开(公告)号：US09029249B2
公开(公告)日：2015-05-12
申请号：US14136388
申请日：2013-12-20
申请人： Tokyo Electron Limited
发明人： Hirokazu Ueda , Masahiro Oka , Masahiro Horigome , Yuuki Kobayashi
IPC分类号： H01L21/26 , H01J37/32 , H01J21/22
CPC分类号： H01J37/32192 , H01J21/22 , H01J37/3222 , H01J37/32449 , H01J37/32972 , H01J37/3299 , H01L21/22
摘要： Disclosed is a plasma doping apparatus provided with a plasma generating mechanism. The plasma generating mechanism includes a microwave generator that generates microwave for plasma excitation, a dielectric window that transmits the microwave generated by the microwave generator into a processing container, and a radial line slot antenna formed with a plurality of slots. The radial line slot antenna radiates the microwave to the dielectric window. A control unit controls the plasma doping apparatus such that a doping gas and a gas for plasma excitation are supplied into the processing container by a gas supply unit in a state where the substrate is placed on a holding unit, and then plasma is generated by the plasma generating mechanism to perform doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×1013 atoms/cm2.
摘要翻译：公开了一种具有等离子体产生机构的等离子体掺杂装置。等离子体产生机构包括产生用于等离子体激发的微波的微波发生器，将由微波发生器产生的微波传输到处理容器中的电介质窗和形成有多个槽的径向线缝隙天线。径向线槽天线将微波辐射到电介质窗口。控制单元控制等离子体掺杂装置，使得在将基板放置在保持单元上的状态下，通过气体供给单元将用于等离子体激发的掺杂气体和气体供应到处理容器中，然后通过等离子体产生机构，以在衬底上进行掺杂，使得注入到衬底中的掺杂剂的浓度小于1×1013原子/ cm 2。

3. 发明授权

US11145522B2 Method of forming boron-based film, and film forming apparatus 有权
公开(公告)号：US11145522B2
公开(公告)日：2021-10-12
申请号：US16263236
申请日：2019-01-31
申请人： TOKYO ELECTRON LIMITED
发明人： Yoshimasa Watanabe , Masahiro Oka , Hirokazu Ueda , Yuuki Yamamoto
IPC分类号： C23C16/511 , C23C16/02 , C23C16/40 , C23C16/455 , H01L21/67 , H01L21/02 , H01L21/311
摘要： A method of forming a boron-based film includes forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas; and controlling film stress of the formed boron-based film by adjusting a process parameter.

4. 发明申请

US20140357068A1 PLASMA DOPING APPARATUS, PLASMA DOPING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：等离子喷涂装置，等离子喷涂方法，半导体装置制造方法和半导体装置
公开(公告)号：US20140357068A1
公开(公告)日：2014-12-04
申请号：US14371609
申请日：2012-10-19
申请人： TOKYO ELECTRON LIMITED
发明人： Masahiro Horigome , Hirokazu Ueda , Masahiro Oka , Yuuki Kobayashi , Takayuki Karakawa
IPC分类号： H01L21/223 , C23C16/452
CPC分类号： H01L21/2236 , C23C16/452 , H01L29/66803 , H01L29/7833
摘要： A plasma doping apparatus which performs doping by injecting dopants into a substrate to be processed. The apparatus includes a processing container, a gas supplying unit configured to supply a doping gas and an inert gas for plasma excitation into the processing container, a holding table configured to hold the substrate to be processed, a plasma generating mechanism configured to generate plasma in the processing container using a microwave, a pressure adjusting mechanism configured to adjust a pressure in the processing container, and a control unit configured to control the plasma doping apparatus. The control unit controls the pressure adjusting mechanism to set the pressure in the processing container to be equal to or more than 100 mTorr and less than 500 mTorr such that a plasma processing is performed on the substrate to be processed using the plasma generated by the plasma generating mechanism.
摘要翻译：一种等离子体掺杂装置，其通过将掺杂剂注入待处理的衬底中进行掺杂。该装置包括处理容器，气体供给单元，被配置为将用于等离子体激发的掺杂气体和惰性气体供应到处理容器中;保持台，被配置为保持待处理的基板;等离子体产生机构，其被配置为产生等离子体使用微波的处理容器，配置为调节处理容器中的压力的压力调节机构，以及被配置为控制等离子体掺杂装置的控制单元。控制单元控制压力调节机构将处理容器中的压力设定为等于或大于100mTorr且小于500mTorr，使得使用等离子体产生的等离子体对待处理的基板进行等离子体处理生成机制。

5. 发明授权

US11615957B2 Method for forming boron-based film, formation apparatus 有权
公开(公告)号：US11615957B2
公开(公告)日：2023-03-28
申请号：US17041767
申请日：2019-02-26
申请人： TOKYO ELECTRON LIMITED
发明人： Hirokazu Ueda , Jinwang Li , Masahiro Oka , Yoshimasa Watanabe , Yuuki Yamamoto , Hiroyuki Ikuta
IPC分类号： H01L21/033 , H01L21/02 , C23C16/02 , C23C16/28 , C23C16/455 , C23C16/50
摘要： A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

6. 发明授权

US10388524B2 Film forming method, boron film, and film forming apparatus 有权
公开(公告)号：US10388524B2
公开(公告)日：2019-08-20
申请号：US15833685
申请日：2017-12-06
申请人： TOKYO ELECTRON LIMITED
发明人： Hirokazu Ueda , Masahiro Oka , Hiraku Ishikawa , Yoshimasa Watanabe , Syuhei Yonezawa
IPC分类号： H01L21/033 , H01L21/311 , H01J37/32 , C23C16/511 , C23C16/38 , C23C16/46 , C23C16/44 , H01L21/02 , C23C16/509 , H01L27/11551 , H01L27/11578
摘要： There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

7. 发明申请

US20150132929A1 METHOD FOR INJECTING DOPANT INTO SUBSTRATE TO BE PROCESSED, AND PLASMA DOPING APPARATUS 审中-公开
标题翻译：将D子注入待处理的基材的方法和等离子体喷涂装置
公开(公告)号：US20150132929A1
公开(公告)日：2015-05-14
申请号：US14397953
申请日：2013-04-05
申请人： TOKYO ELECTRON LIMITED
发明人： Masahiro Horigome , Hirokazu Ueda , Masahiro Oka , Masahiro Yamazaki , Takenao Nemoto
IPC分类号： H01L21/223 , H01L21/22 , H01J37/32
CPC分类号： H01L21/2236 , H01J37/32192 , H01J37/32412 , H01J37/32449 , H01J2237/31705 , H01J2237/3365 , H01L21/2225
摘要： Provided is a method for injecting a dopant into a substrate to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a substrate to be processed; and (b) a step for injecting a dopant into the substrate by supplying a doping gas containing AsH3, an inert gas, and H2 gas to the inside of the processing container, and applying plasma excitation energy to the inside of the processing container. In the step of injecting the dopant, the ratio of hydrogen partial pressure to the gas total pressure in the processing container is set within the range of 0.0015-0.003.
摘要翻译：提供了将掺杂剂注入待处理的基板中的方法。本发明的一个实施方案中的方法包括：（a）在处理容器中制备待处理的基材的步骤; 和（b）通过向处理容器的内部供给含有AsH 3，惰性气体和H 2气体的掺杂气体，并向处理容器的内部施加等离子体激发能量，将掺杂剂注入基板的工序。在注入掺杂剂的步骤中，处理容器中的氢分压与气体总压的比例设定在0.0015-0.003的范围内。

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