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1. 发明授权

US11525856B2 Inspection apparatus and inspection method 有权
公开(公告)号：US11525856B2
公开(公告)日：2022-12-13
申请号：US17287836
申请日：2019-10-17
申请人： Tokyo Electron Limited
发明人： Naoki Akiyama , Susumu Saito , Hiroyuki Nakayama , Shigeru Kasai
IPC分类号： G01R31/28 , G01R31/308 , H01L27/146
摘要： An inspection apparatus for inspecting a backside irradiation type imaging device formed on an inspection object includes: a stage on which the inspection object is mounted such that the stage faces a rear surface of the backside irradiation type imaging device, wherein the stage includes: a transmitter including a flat plate formed of a light transmitting material, and configured to mount the inspection object on the transmitter; and a light emitter disposed at a location facing the inspection object with the transmitter interposed between the light emitter and the inspection object, and configured to emit light toward the transmitter, and wherein the transmitter transmits the light from the light emitter while diffusing the light.

2. 发明授权

US11340283B2 Testing device 有权
公开(公告)号：US11340283B2
公开(公告)日：2022-05-24
申请号：US16976672
申请日：2019-02-19
申请人： TOKYO ELECTRON LIMITED
发明人： Shigeru Kasai , Masahito Kobayashi
IPC分类号： G01R31/26 , H01L21/26
摘要： A testing device for inspecting an electronic device by causing contact terminals to electrically contact the electronic device, includes: a mounting table formed with a light transmission member opposite the side on which a inspection object is placed and having therein a coolant flow path through which a coolant capable of transmitting light flows; a light irradiation mechanism disposed so as to face the surface opposite the inspection object placement side of the mounting table, and having LEDs pointing toward the inspection object; and a controller controlling absorption of heat by the coolant and heating by the lights from the LEDs to control the temperature of the electronic device to be inspected. The controller controls the light output from the LEDs based on the measured temperature of the electronic device to be inspected and controls the absorption of heat by the coolant based on the LED light output.

3. 发明授权

US09204500B2 Microwave heating apparatus and processing method 有权
标题翻译：微波加热装置及加工方法
公开(公告)号：US09204500B2
公开(公告)日：2015-12-01
申请号：US13727000
申请日：2012-12-26
申请人： TOKYO ELECTRON LIMITED
发明人： Taro Ikeda , Shigeru Kasai , Jun Yamashita , Masakazu Ban
IPC分类号： H05B6/64 , H05B6/72 , H05B6/74 , H05B6/80 , H05B6/70
CPC分类号： H05B6/6402 , H05B6/6426 , H05B6/70 , H05B6/707 , H05B6/72 , H05B6/806
摘要： In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof.
摘要翻译：在微波加热装置中，四个微波导入口被配置在处理室的顶部以大约90°的角度彼此间隔开的位置，使得其长边和短边平行到四个侧壁的内表面。微波引入端口以这样的方式设置，即当相应的微波引入端口移动时，每个微波引入端口不与其长边与相应的微波导入口的长边平行的另一个微波导入口重叠在垂直于其长边的方向上平移。

4. 发明申请

US20140283747A1 PLASMA PROCESSING APPARATUS AND SHOWER PLATE 有权
标题翻译：等离子体加工设备和淋浴板
公开(公告)号：US20140283747A1
公开(公告)日：2014-09-25
申请号：US14219360
申请日：2014-03-19
申请人： Tokyo Electron Limited
发明人： Shigeru Kasai , Taro Ikeda , Yutaka Fujino
IPC分类号： C23C16/44 , B05B1/00
CPC分类号： C23C16/4401 , B05B1/005 , B05B1/14 , C23C16/452 , H01J37/32192 , H01J37/32293 , H01J37/3244
摘要： A plasma processing apparatus including a processing vessel 10 in which a plasma process is performed and a plasma generation antenna 20 having a shower plate 100 which supplies a first gas and a second gas into the processing vessel 10, performs the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower plate 100 through a supply of a microwave. The shower plate 100 has multiple gas holes 133 configured to supply the first gas into the processing vessel 10 and multiple supply nozzles 160 configured to supply the second gas into the processing vessel 10, and the supply nozzles 160 are protruded vertically downwards from a bottom surface of the shower plate 100 and are provided at different positions from the gas holes 133.
摘要翻译：一种等离子体处理装置，包括其中执行等离子体处理的处理容器10和具有向处理容器10供应第一气体和第二气体的喷淋板100的等离子体生成天线20，在基板上进行等离子体处理由通过微波供给在淋浴板100的表面上形成的表面波产生的等离子体。淋浴板100具有多个气孔133，其被配置为将第一气体供应到处理容器10中，并且多个供给喷嘴160构造成将第二气体供应到处理容器10中，并且供给喷嘴160从底表面垂直向下突出并且设置在与气孔133不同的位置。

5. 发明授权

US11543445B2 Inspection apparatus 有权
公开(公告)号：US11543445B2
公开(公告)日：2023-01-03
申请号：US16772547
申请日：2018-11-29
申请人： TOKYO ELECTRON LIMITED
发明人： Shigeru Kasai , Yutaka Akaike , Hiroyuki Nakayama , Yoshinori Fujisawa
IPC分类号： G01R31/26 , G01N21/88 , G01N21/95 , H01L27/146 , F21Y115/10
摘要： An inspection apparatus is provided to inspect an imaging device formed on an inspection object by bringing a contact terminal into electrical contact with a wiring layer of the imaging device while causing light to enter the imaging device. The light enters the imaging device from a back surface that is a surface on the side opposite to the side on which the wiring layer is formed. The inspection apparatus includes a substrate support made of a light-transmissive material and on which the inspection object is supported such that the substrate support faces a back surface of the imaging device, and a light irradiation mechanism disposed to be opposite to the inspection object with the substrate support interposed therebetween and having a plurality of LEDs such that light from the LEDs is oriented toward the inspection object.

6. 发明授权

US11169204B2 Temperature control device, temperature control method, and inspection apparatus 有权
公开(公告)号：US11169204B2
公开(公告)日：2021-11-09
申请号：US16697486
申请日：2019-11-27
申请人： TOKYO ELECTRON LIMITED
发明人： Masahito Kobayashi , Shigeru Kasai
IPC分类号： G01R31/28
摘要： A temperature control device for controlling a temperature of an object, the temperature control device includes a heater having a heating source configured to heat the object, a cooler having a cooling source configured to cool the object; and a temperature controller configured to control the heating source and the cooling source. The temperature controller includes a sliding mode controller configured to supply power to the heating source as an operation amount, a cooling mode controller configured to supply power to the cooling source as an operation amount, and a switching controller configured to determine whether an output of the sliding mode controller will be output to the heating source as a first operation amount, or an output of the cooling mode controller will be used as a second operation amount, based on a nonlinear term value of the output of the sliding mode controller.

7. 发明授权

US11125813B2 Prober 有权
公开(公告)号：US11125813B2
公开(公告)日：2021-09-21
申请号：US16767226
申请日：2018-11-05
申请人： TOKYO ELECTRON LIMITED
发明人： Shigeru Kasai
IPC分类号： G01R31/28 , H05B45/40 , G01R31/26
摘要： A prober includes: a stage that places a substrate formed with a plurality of chips thereon in a matrix; a contact that sequentially contacts with electrode pads of the plurality of chips thereby performing an inspection on electrical characteristic of the plurality of chips; a plurality of LED units provided on a side opposite to a placing surface of the stage so as to independently heat a plurality of areas where the plurality of chips are located, respectively, and each including one or a plurality of LEDs; and a controller that outputs a control signal to drive, among the plurality of LED units, at least an LED unit corresponding to an area of a chip to be inspected, among the area of the chip to be inspected and peripheral areas of the corresponding area.

8. 发明授权

US10557200B2 Plasma processing device with shower plate having protrusion for suppressing film formation in gas holes of shower plate 有权
公开(公告)号：US10557200B2
公开(公告)日：2020-02-11
申请号：US14917414
申请日：2014-09-04
申请人： TOKYO ELECTRON LIMITED
发明人： Taro Ikeda , Shigeru Kasai , Emiko Hara , Yutaka Fujino , Yuki Osada , Jun Nakagomi , Tomohito Komatsu
IPC分类号： C23C16/455 , H01J37/32 , C23C16/511 , B05B1/00 , B05B1/14
摘要： A plasma processing device processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate by a supplied microwave, which includes a plasma generating antenna equipped with the shower plate for supplying first and second gases into a processing vessel, and a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. The first gas supply holes are disposed inward of the outer surface of the drooping member. The second gas supply holes are disposed outward of the outer surface of the drooping member.

9. 发明授权

US09362149B2 Etching method, etching apparatus, and storage medium 有权
标题翻译：蚀刻方法，蚀刻装置和存储介质
公开(公告)号：US09362149B2
公开(公告)日：2016-06-07
申请号：US14479466
申请日：2014-09-08
申请人： TOKYO ELECTRON LIMITED
发明人： Yusuke Muraki , Shigeru Kasai , Tomohiro Suzuki
IPC分类号： H01L21/67 , H01L21/311 , H01L21/768
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/67115 , H01L21/67207 , H01L21/76802 , H01L21/76897
摘要： Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.
摘要翻译：提供一种蚀刻氧化硅膜的方法，其包括将含卤素元素的气体和碱性气体的混合气体提供到氧化硅膜的表面上; 改性氧化硅膜以产生反应产物; 并加热反应产物以除去反应产物。使用一个室进行氧化硅膜的修饰和加热反应产物。在加热反应产物时，通过加热单元选择性地加热反应产物。

10. 发明授权

US11425791B2 Mounting table, and method of manufacturing the mounting table 有权
公开(公告)号：US11425791B2
公开(公告)日：2022-08-23
申请号：US16713708
申请日：2019-12-13
申请人： TOKYO ELECTRON LIMITED
发明人： Shigeru Kasai
IPC分类号： H05B1/02 , B32B7/027 , B32B7/12 , B32B37/14 , H01L21/687 , H01L21/683
摘要： There is provided a mounting table on which a workpiece is mounted, including: a plurality of layers including a ceiling layer having a front surface on which the workpiece is mounted, and a heating layer formed at a rear surface side of the ceiling layer and configured to heat the ceiling layer, the plurality of layers being stacked above one another. Each of the plurality of layers is formed by a silicon single crystal substrate or a silicon polycrystalline substrate. Each of the plurality of layers is bonded to a different layer which is adjacent in a stacking direction through oxide films formed on the silicon single crystal substrate or the silicon polycrystalline substrate.

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