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1. 发明授权

US10559460B2 Film forming apparatus and film forming method 有权
公开(公告)号：US10559460B2
公开(公告)日：2020-02-11
申请号：US16123416
申请日：2018-09-06
申请人： TOKYO ELECTRON LIMITED , TOHOKU UNIVERSITY
发明人： Akira Shimizu , Katsutoshi Ishii , Akinobu Teramoto , Tomoyuki Suwa , Yoshinobu Shiba
IPC分类号： H01L21/31 , H01L21/02 , C23C16/48 , C23C16/34 , H01L21/67
摘要： There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container; a precursor gas supply part configured to supply a precursor gas into the processing container; a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container; and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.

2. 发明授权

US09945028B2 Method of filling recess 有权
公开(公告)号：US09945028B2
公开(公告)日：2018-04-17
申请号：US15581475
申请日：2017-04-28
申请人： TOKYO ELECTRON LIMITED
发明人： Akira Shimizu
IPC分类号： C23C16/00 , C23C16/34 , C23C16/455
CPC分类号： C23C16/345 , C23C16/045 , C23C16/45527 , C23C16/45534 , C23C16/45551
摘要： A method of filling a recess with a nitride film is performed by repeating a cycle. The cycle includes a film-forming raw material gas adsorption process of adsorbing a raw material gas containing an element forming the nitride film to be formed on a target substrate on which the recess is formed on its surface, and a nitriding process of nitriding the adsorbed raw material gas by nitriding species to fill the recess. At least a portion of a period for forming the nitride film is used as a bottom-up growth period, for which a polymer material adsorbable to the surface of the target substrate is supplied in a gaseous state and is adsorbed to an upper portion of the recess to inhibit adsorption of the film-forming raw material gas, and for which the nitride film is grown from a bottom portion of the recess.

3. 发明授权

US09865457B2 Nitride film forming method using nitrading active species 有权
公开(公告)号：US09865457B2
公开(公告)日：2018-01-09
申请号：US15341767
申请日：2016-11-02
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide Hasebe , Akira Shimizu
IPC分类号： H01L21/31 , H01L21/02
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/45542 , C23C16/45551 , H01L21/0217 , H01L21/02211 , H01L21/02274
摘要： There is provided a method of forming a nitride film, including: repeating a cycle including an adsorption process of adsorbing a film forming precursor gas onto a substrate having a surface in which a fine recess is formed, the film forming precursor gas containing an element and chlorine constituting a nitride film to be formed; and a nitriding process of nitriding the adsorbed film forming precursor gas with nitriding active species, to form the nitride film in the fine recess. The nitriding process includes: generating NH* active species and N* active species as a nitriding active species; and controlling concentrations of the NH* active species and the N* active species to vary an area where the film forming precursor gas is adsorbed in the fine recess.

4. 发明授权

US09512541B2 Selective growth method and substrate processing apparatus 有权
标题翻译：选择性生长方法和底物处理装置
公开(公告)号：US09512541B2
公开(公告)日：2016-12-06
申请号：US14887685
申请日：2015-10-20
申请人： TOKYO ELECTRON LIMITED
发明人： Akira Shimizu , Masayuki Kitamura
IPC分类号： C30B25/18 , H01L21/02 , C30B25/16 , C23C16/52 , H01L21/285
CPC分类号： C30B25/18 , C23C16/04 , C23C16/26 , C23C16/402 , C23C16/52 , C23C16/56 , C30B25/165 , H01L21/02115 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/02312 , H01L21/28568
摘要： There is provided a selective growth method of selectively growing a thin film on exposed surfaces of an underlying insulation film and an underlying metal film, which includes: selectively growing a film whose thickness is decreased by combustion on the underlying metal film using metal of the underlying metal film as a catalyst; and selectively growing a silicon oxide film on the underlying insulation film while combusting the film whose thickness is decreased by combustion.
摘要翻译：提供了选择性地生长薄膜在下面的绝缘膜和下面的金属膜的暴露表面上的选择性生长方法，其包括：使用下面的金属的金属，选择性地生长其厚度通过燃烧在下面的金属膜上而降低的膜金属膜作催化剂; 并且在通过燃烧使其厚度减小的膜燃烧时，在下面的绝缘膜上选择性地生长氧化硅膜。

5. 发明申请

US20140295677A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20140295677A1
公开(公告)日：2014-10-02
申请号：US14229431
申请日：2014-03-28
申请人： TOKYO ELECTRON LIMITED
发明人： Akira Shimizu , Tsuyoshi Tsunatori , Shigeru Nakajima
IPC分类号： H01L21/02
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/45527 , C23C16/45561 , H01L21/02189
摘要： A method of forming an oxide film on an object to be processed, includes: supplying a film-forming raw material gas into a processing chamber; performing at least one of exhausting the processing chamber and supplying a purge gas into the processing chamber to remove gas remaining in the processing chamber; supplying an oxidant gas into the processing chamber; and performing at least one of exhausting the processing chamber and supplying the purge gas into the processing chamber to remove gas remaining in the processing chamber, wherein supplying an oxidant gas includes: supplying a first oxidant gas into the processing chamber at a first concentration; and supplying a second oxidant gas into the processing chamber at a second concentration higher than the first concentration.
摘要翻译：在被加工物上形成氧化膜的方法包括：将成膜原料气体供给到处理室内; 执行排出所述处理室并将清洗气体供应到所述处理室中以去除所述处理室中残留的气体中的至少一个; 将氧化剂气体供应到所述处理室中; 并且执行排出所述处理室并将所述吹扫气体供应到所述处理室中以去除所述处理室中残留的气体中的至少一个，其中供应氧化剂气体包括：以第一浓度将第一氧化剂气体供应到所述处理室中; 以及以高于第一浓度的第二浓度将第二氧化剂气体供应到处理室中。

6. 发明授权

US10546741B2 Selective growth method 有权
公开(公告)号：US10546741B2
公开(公告)日：2020-01-28
申请号：US15926405
申请日：2018-03-20
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroki Murakami , Akira Shimizu
IPC分类号： C23C16/40 , H01L21/02 , H01L21/285
摘要： A selective growth method of selectively growing a thin film on an underlayer, on which an insulating film and a conductive film are exposed, includes: preparing a workpiece having the underlayer on which the insulating film and the conductive film are exposed; and selectively growing a silicon-based insulating film on the insulating film by repeating a plurality of times a first step of adsorbing an aminosilane-based gas onto the insulating film and the conductive film and a second step of supplying a reaction gas for reacting with the adsorbed aminosilane-based gas to form the silicon-based insulating film, wherein the conductive film is vaporized by reaction with the reaction gas so that the conductive film is reduced in thickness.

7. 发明授权

US09970110B2 Plasma processing apparatus 有权
公开(公告)号：US09970110B2
公开(公告)日：2018-05-15
申请号：US14518151
申请日：2014-10-20
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide Hasebe , Jun Ogawa , Akira Shimizu
IPC分类号： C23C16/455 , H05H1/46 , C23C16/509 , C23C16/452 , H01J37/32
CPC分类号： C23C16/45582 , C23C16/452 , C23C16/45523 , C23C16/45578 , H01J37/32091 , H01J37/3244 , H01J37/32568
摘要： A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.

8. 发明授权

US09390907B2 Film forming method of SiCN film 有权
标题翻译： SiCN膜的成膜方法
公开(公告)号：US09390907B2
公开(公告)日：2016-07-12
申请号：US14725147
申请日：2015-05-29
申请人： TOKYO ELECTRON LIMITED , UBE INDUSTRIES, LTD.
发明人： Akira Shimizu , Takahiro Miyahara , Masashi Shirai , Shinichiro Sadaike
IPC分类号： H01L21/31 , H01L21/02
CPC分类号： H01L21/02167 , C23C16/36 , C23C16/45544 , C23C16/45553 , H01L21/0217 , H01L21/02211 , H01L21/0228
摘要： A method of forming an SiCN film on a surface to be processed of an object, the method including: supplying an Si source gas containing an Si source into a processing chamber having the object accommodated therein; and supplying a gas containing a nitriding agent into the processing chamber after supplying the Si source gas, wherein a compound of nitrogen and carbon is used as the nitriding agent and wherein R1, R2 and R3 in the compound of nitrogen and carbon are linear or branched alkyl groups having 1 to 8 carbon atoms, which may have hydrogen atoms or substituents. Therefore, the SiCN film can be formed while maintaining a satisfactory film forming rate even though the film forming temperature is lowered.
摘要翻译：一种在物体的被处理表面上形成SiCN膜的方法，所述方法包括：将含有Si源的Si源气体供应到容纳物体的处理室中; 并且在供给Si源气体之后，将含有氮化剂的气体供给到处理室中，其中使用氮和碳的化合物作为氮化剂，并且其中氮和碳化合物中的R 1，R 2和R 3是直链或支链的具有1至8个碳原子的烷基，其可以具有氢原子或取代基。因此，即使成膜温度降低，也可以形成SiCN膜，同时保持良好的成膜速度。

9. 发明授权

US10351952B2 Film formation apparatus, film formation method, and storage medium 有权
公开(公告)号：US10351952B2
公开(公告)日：2019-07-16
申请号：US14725640
申请日：2015-05-29
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuo Yabe , Akira Shimizu
IPC分类号： C23C16/44 , H01L21/67 , C23C16/455 , C23C16/40
摘要： A film formation apparatus of forming a thin film by stacking a molecular layer of an oxide on a surface of a substrate in a vacuum atmosphere formed within a vacuum chamber includes: a source gas supply unit supplying a source gas containing a source to the substrate; an atmosphere gas supply unit supplying an atmosphere gas to the vacuum chamber; an energy supply unit supplying energy to the ozone atmosphere; a control unit configured to output a control signal for repeatedly performing a cycle including a supply of the source gas, a supply of the atmosphere gas, and a supply of energy plural times; a buffer region connected to the vacuum chamber, an inert gas being supplied to the buffer region; and a partition unit partitioning the buffer region with respect to the vacuum chamber and making the buffer region communicate with the vacuum chamber.

10. 发明授权

US09466478B2 Film forming method and film forming apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US09466478B2
公开(公告)日：2016-10-11
申请号：US14229431
申请日：2014-03-28
申请人： TOKYO ELECTRON LIMITED
发明人： Akira Shimizu , Tsuyoshi Tsunatori , Shigeru Nakajima
IPC分类号： C23C16/00 , H01L21/02 , C23C16/40 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/45527 , C23C16/45561 , H01L21/02189
摘要： A method of forming an oxide film on an object to be processed, includes: supplying a film-forming raw material gas into a processing chamber; performing at least one of exhausting the processing chamber and supplying a purge gas into the processing chamber to remove gas remaining in the processing chamber; supplying an oxidant gas into the processing chamber; and performing at least one of exhausting the processing chamber and supplying the purge gas into the processing chamber to remove gas remaining in the processing chamber, wherein supplying an oxidant gas includes: supplying a first oxidant gas into the processing chamber at a first concentration; and supplying a second oxidant gas into the processing chamber at a second concentration higher than the first concentration.
摘要翻译：在被处理物上形成氧化膜的方法包括：将成膜原料气体供给到处理室内; 执行排出所述处理室并将清洗气体供应到所述处理室中以去除所述处理室中残留的气体中的至少一个; 将氧化剂气体供应到所述处理室中; 并且执行排出所述处理室并将所述吹扫气体供应到所述处理室中以去除所述处理室中残留的气体中的至少一个，其中供应氧化剂气体包括：以第一浓度将第一氧化剂气体供应到所述处理室中; 以及以高于第一浓度的第二浓度将第二氧化剂气体供应到处理室中。

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