专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11472956B2 Resin composition for forming phase-separated structure, method for producing structure including phase-separated structure, and block copolymer 有权
公开(公告)号：US11472956B2
公开(公告)日：2022-10-18
申请号：US17305618
申请日：2021-07-12
申请人： TOKYO OHKA KOGYO CO., LTD. , TOKYO INSTITUTE OF TECHNOLOGY
发明人： Teruaki Hayakawa , Lei Dong , Takahiro Dazai , Ken Miyagi , Takayoshi Mori , Daisuke Kawana
IPC分类号： C08F212/08 , C08L53/00 , C08F220/14 , B05D3/02 , B05D7/24 , B05D5/00 , C08F220/38
摘要： A resin composition for forming a phase-separated structure containing a block copolymer having a first block and a second block, in which the first block is formed of a constituent unit represented by Formula (b1), the second block is formed of a constituent unit represented by Formula (b2m) and a random copolymer having a constituent unit represented by Formula (b2g), and a ratio of a volume of the first block is 20% to 80% by volume. In the formulas, R1 is a hydrogen atom or an alkyl group, Rb1 is a hydrogen atom or a methyl group, R2 is an alkyl group which may have a silicon atom, a fluorine atom, a carboxy group, an amino group, a hydroxy group, or a phosphoric acid group, R3 is a linear or branched alkylene group having 1 to 10 carbon atoms, which may have a hydroxy group, and Rb2 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms

2. 发明授权

US10941253B2 Block copolymer, and method of producing structure containing phase-separated structure 有权
公开(公告)号：US10941253B2
公开(公告)日：2021-03-09
申请号：US15895588
申请日：2018-02-13
申请人： TOKYO OHKA KOGYO CO., LTD. , TOKYO INSTITUTE OF TECHNOLOGY
发明人： Teruaki Hayakawa , Seina Yamazaki , Rin Odashima , Takehiro Seshimo , Daisuke Kawana , Akiyoshi Yamazaki
IPC分类号： C08G77/20 , C08G81/02 , C08L83/08 , C08F299/08 , C08F297/02 , C08G77/442 , C08L83/10 , C08F220/18 , C08F212/08 , B05D3/10 , C09D7/20 , B32B27/28
摘要： A block copolymer including a first block and a second block, the first block consisting of a polymer (P1) having a repeating structure of a structural unit (u1) containing in a side chain thereof a hyperbranched structure containing a silicon atom.

3. 发明授权

US11560444B2 Method of producing block copolymer capable of creating specific structure pattern 有权
公开(公告)号：US11560444B2
公开(公告)日：2023-01-24
申请号：US16780643
申请日：2020-02-03
申请人： TOKYO OHKA KOGYO CO., LTD. , TOKYO INSTITUTE OF TECHNOLOGY
发明人： Teruaki Hayakawa , Seina Yamazaki , Akiyoshi Yamazaki , Daisuke Kawana , Yoshitaka Komuro , Takaya Maehashi , Rin Odashima
IPC分类号： C08F297/02 , C09D153/00
摘要： A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure of a structural unit (u21) represented by general formula (u2-1) shown below, and the volume ratio of the first block, based on all blocks constituting the block copolymer being 42 to 44 vol %: In which RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 is a group derived from a compound represented by formula SHRt1, wherein Rt1 represents a hydrocarbon group having 1 to 5 carbon atoms optionally having a substituent.

4. 发明授权

US11261299B2 Block copolymer and method of producing the same, and method of producing structure containing phase-separated structure 有权
公开(公告)号：US11261299B2
公开(公告)日：2022-03-01
申请号：US16286232
申请日：2019-02-26
申请人： TOKYO OHKA KOGYO CO., LTD. , TOKYO INSTITUTE OF TECHNOLOGY
发明人： Akiyoshi Yamazaki , Daisuke Kawana , Takehiro Seshimo , Teruaki Hayakawa , Lei Dong , Rin Odashima
IPC分类号： C08F283/12 , C08G77/04 , G03F7/20 , C08G77/442 , C08G77/26 , C08G77/28
摘要： A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure represented by general formula (u2-1), and a block (b22) consisting of a polymer having a repeating structure of a structural unit (u22) containing a silicon atom, and the block (b22) is positioned between the first block and the block (b21) (wherein RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 represents an organic group having a polar group).

5. 发明授权

US11780946B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern 有权
公开(公告)号：US11780946B2
公开(公告)日：2023-10-10
申请号：US17152131
申请日：2021-01-19
申请人： TOKYO OHKA KOGYO CO., LTD.
发明人： Akiyoshi Yamazaki , Daisuke Kawana , Yoshitaka Komuro , Masatoshi Arai , Nobuhiro Michibayashi , Takatoshi Inari
IPC分类号： C08F220/58 , G03F7/038 , G03F7/039 , C08F220/02 , C08F220/12
CPC分类号： C08F220/58 , C08F220/12 , G03F7/038 , G03F7/039
摘要： An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rp01 represents a hydrogen atom or the like; Vp01 represents a single bond or a divalent linking group; Rp02 and Rp03 each independently represents a hydrocarbon group which may have a substituent, or Rp02 and Rp03 are mutually bonded to form a ring; Rp04 represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rp05 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rp06 represents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4

6. 发明授权

US10101658B2 Resist composition and method of forming resist pattern 有权
公开(公告)号：US10101658B2
公开(公告)日：2018-10-16
申请号：US14995987
申请日：2016-01-14
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Taku Hirayama , Daisuke Kawana , Shogo Matsumaru , Kenta Suzuki , Takashi Kamizono , Masahito Yahagi , Tatsuya Fujii
IPC分类号： G03F7/039 , G03F7/004 , G03F7/20 , G03F7/32
摘要： A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid generator (B) which generates acid upon exposure, the base component (A) including a resin component having a structural unit (a0) represented by general formula (a0-1) shown below, and the acid generator component (B) containing a compound having a cation moiety having an electron withdrawing group (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Ya represents a carbon atom; Xa represents an atomic group required to form an alicyclic hydrocarbon group with Ya; and Ra01 represents an aromatic hydrocarbon group optionally having a substituent).

7. 发明授权

US09057948B2 Resist composition for EUV or EB, and method of forming resist pattern 有权
标题翻译：用于EUV或EB的抗蚀剂组合物，以及形成抗蚀剂图案的方法
公开(公告)号：US09057948B2
公开(公告)日：2015-06-16
申请号：US13653930
申请日：2012-10-17
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Jun Iwashita , Kenri Konno , Daisuke Kawana , Tatsuya Fujii , Kenta Suzuki
IPC分类号： G03F7/004 , G03F7/00 , G03F7/039 , G03F7/20
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2059
摘要： A resist composition including a base component containing a polymer (A1) having a structural unit (a5) containing a group represented by general formula (a5-0-1) or (a5-0-2), wherein the amount of the monomer that derives the structural unit (a5) is not more than 100 ppm relative to (A1). In the formulas, each of Q1 and Q2 represents single bond or divalent linking group, R3, R4 and R5 represent organic groups, and R4 and R5 may be bonded to each other to form a ring in combination with the sulfur atom, provided that —R3—S+(R4)(R5) has a total of only one aromatic ring or has no aromatic rings, V− represents a counter anion, A− represents an organic group containing anion, and Mm+ represents an organic cation having a valency of m, wherein m represents an integer of 1 to 3, provided that Mm+ has only one aromatic ring or has no aromatic rings.
摘要翻译：一种抗蚀剂组合物，其包含含有具有含有由通式（a5-0-1）或（a5-0-2）表示的基团的结构单元（a5））的聚合物（A1）的基础组分，其中单体的量导出结构单元（a5）相对于（A1）不超过100ppm。在该式中，Q1和Q2各自表示单键或二价连接基团，R 3，R 4和R 5表示有机基团，并且R 4和R 5可以彼此键合形成与硫原子结合的环，条件是 - R3-S +（R4）（R5）总共只有一个芳环或没有芳香环，V-表示抗衡阴离子，A-表示含有机基团的阴离子，Mm +表示有价阳离子的有机阳离子其中m表示1〜3的整数，条件是Mm +仅具有一个芳环或不具有芳环。

8. 发明授权

US09766541B2 Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound 有权
公开(公告)号：US09766541B2
公开(公告)日：2017-09-19
申请号：US15186044
申请日：2016-06-17
申请人： TOKYO OHKA KOGYO CO., LTD.
发明人： Hiroto Yamazaki , Yoshitaka Komuro , Masatoshi Arai , Daisuke Kawana , Kenta Suzuki , Tatsuya Fujii
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , G03F7/32 , C08F216/10 , G03F7/038 , H01L21/027 , C07C65/10 , C07C309/06 , C07C309/12 , C07C309/19 , C07C381/12
CPC分类号： G03F7/0045 , C07C65/10 , C07C309/06 , C07C309/12 , C07C309/19 , C07C381/12 , C07C2602/42 , C07C2603/74 , C08F216/10 , G03F7/004 , G03F7/0046 , G03F7/038 , G03F7/039 , G03F7/0397 , G03F7/2059 , G03F7/322 , H01L21/0274
摘要： A positive-type resist composition which generates an acid upon exposure and whose solubility in an alkali developing solution increases under the action of an acid, the composition including a base material component whose solubility in an alkali developing solution increases under the action of an acid; and a compound represented by the following general formula (m0): Z01 to Z04 each independently represent a substituent having electron withdrawing properties, Rb21 and Rb22 each independently represent an alkyl group, an alicyclic hydrocarbon group which may have a substituent, or a hydroxyl group, Rb1 represents an aryl group which may have a substituent, an alkyl group, or an alkenyl group, n1 and n2 represent an integer of 0 to 3, and X0− represents an organic anion.

9. 发明授权

US10324377B2 Resist composition and method of forming resist pattern 有权
公开(公告)号：US10324377B2
公开(公告)日：2019-06-18
申请号：US15174216
申请日：2016-06-06
申请人： TOKYO OHKA KOGYO CO., LTD.
发明人： Taku Hirayama , Daisuke Kawana , Yoshitaka Komuro , Masatoshi Arai , Shogo Matsumaru , Kenta Suzuki , Takashi Kamizono , Tatsuya Fujii
IPC分类号： G03F7/038 , G03F7/039 , G03F7/30 , G03F7/004
摘要： A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component which exhibits changed solubility in a developing solution under action of acid and an acid diffusion control agent, the base component including a structural unit represented by general formula (a0-1) shown below in which R represents H, C1-C5 alkyl group or C1-C5 halogenated alkyl group; Ya represents C; Xa represents a group which forms a divalent cyclic hydrocarbon group with Ya; Ra01 to Ra03 represents H, C1-C10 monovalent saturated chain hydrocarbon group or C3-C20 monovalent saturated cyclic hydrocarbon group; the acid diffusion control agent containing an acid which exhibits an acid dissociation constant of 1.5 or more.

10. 发明申请

US20140093824A1 RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译： EUV或EB的抗性组合物和形成耐药模式的方法
公开(公告)号：US20140093824A1
公开(公告)日：2014-04-03
申请号：US14043315
申请日：2013-10-01
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Daisuke Kawana , Kenta Suzuki , Tatsuya Fujii , Jun Iwashita , Kenri Konno
IPC分类号： G03F7/038 , G03F7/20
CPC分类号： G03F7/0388 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/20 , G03F7/2041
摘要： A resist composition including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) and a structural unit (a6) which generates acid upon exposure, and a method of forming a resist pattern using the resist composition. In general formula (a0-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Wa0 represents a single bond or an aliphatic hydrocarbon group having 1 to 5 carbon atoms and having a valency of (na0+1); Ra0 represents an aryl group of 4 to 16 carbon atoms which may have a substituent; and na0 represents 1 or 2.
摘要翻译：包含含有由通式（a0-1）表示的结构单元（a0）和曝光时产生酸的结构单元（a6）的聚合化合物（A1）的抗蚀剂组合物和使用该抗蚀剂形成抗蚀剂图案的方法组成。在通式（a0-1）中，R表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基; Wa表示单键或碳原子数1〜5的脂肪族烃基，其化合价为（na0 + 1）的化合价。 Ra0表示可以具有取代基的4〜16个碳原子的芳基; 而na0表示1或2。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式