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1. 发明授权

US09525151B2 Organic light emitting device 有权
标题翻译：有机发光装置
公开(公告)号：US09525151B2
公开(公告)日：2016-12-20
申请号：US14130090
申请日：2012-06-15
申请人： Tae Whan Kim , Hyun Sung Bang , Dong Chul Choo
发明人： Tae Whan Kim , Hyun Sung Bang , Dong Chul Choo
IPC分类号： H01L51/52 , H01L51/00 , H01L51/50 , B82Y10/00
CPC分类号： H01L51/5203 , B82Y10/00 , H01L51/0048 , H01L51/502 , H01L51/5296
摘要： Provided is an organic light emitting device including a nano composite layer. The organic light emitting device adopts a nano composite layer including an insulator and light emitting nano-particles within a device, thereby simultaneously insulating a control electrode and changing the color of light emitted from a light emitting layer, thereby improving external quantum efficiency. Further, the amount of electron holes and electrons injected into the light emitting layer may be adjusted through a voltage applied to the control electrode so as to secure a stable current when the device is operated. In addition, when compared to a conventional light emitting device, the surface area of positive and negative electrodes may be reduced so as to reduce reflectance with respect to external light.
摘要翻译：提供了包括纳米复合层的有机发光器件。有机发光器件在器件内采用包括绝缘体和发光纳米粒子的纳米复合层，从而同时绝缘控制电极并改变从发光层发射的光的颜色，从而提高外部量子效率。此外，可以通过施加到控制电极的电压来调节注入到发光层中的电子空穴和电子的量，以便在器件操作时确保稳定的电流。此外，当与传统的发光器件相比时，可以减小正极和负极的表面积，以减少相对于外部光的反射率。

2. 发明申请

US20140231766A1 ORGANIC LIGHT EMITTING DEVICE 有权
标题翻译：有机发光装置
公开(公告)号：US20140231766A1
公开(公告)日：2014-08-21
申请号：US14130090
申请日：2012-06-15
申请人： Tae Whan Kim , Hyun Sung Bang , Dong Chul Choo
发明人： Tae Whan Kim , Hyun Sung Bang , Dong Chul Choo
IPC分类号： H01L51/52
CPC分类号： H01L51/5203 , B82Y10/00 , H01L51/0048 , H01L51/502 , H01L51/5296
摘要： Provided is an organic light emitting device including a nano composite layer. The organic light emitting device adopts a nano composite layer including an insulator and light emitting nano-particles within a device, thereby simultaneously insulating a control electrode and changing the color of light emitted from a light emitting layer, thereby improving external quantum efficiency. Further, the amount of electron holes and electrons injected into the light emitting layer may be adjusted through a voltage applied to the control electrode so as to secure a stable current when the device is operated. In addition, when compared to a conventional light emitting device, the surface area of positive and negative electrodes may be reduced so as to reduce reflectance with respect to external light.
摘要翻译：提供了包括纳米复合层的有机发光器件。有机发光器件在器件内采用包括绝缘体和发光纳米粒子的纳米复合层，从而同时绝缘控制电极并改变从发光层发射的光的颜色，从而提高外部量子效率。此外，可以通过施加到控制电极的电压来调节注入到发光层中的电子空穴和电子的量，以便在器件操作时确保稳定的电流。此外，当与传统的发光器件相比时，可以减小正极和负极的表面积，以减少相对于外部光的反射率。

3. 发明授权

US06475886B2 Fabrication method of nanocrystals using a focused-ion beam 失效
标题翻译：使用聚焦离子束的纳米晶体的制造方法
公开(公告)号：US06475886B2
公开(公告)日：2002-11-05
申请号：US10025696
申请日：2001-12-26
申请人： Eun Kyu Kim , Young Ju Park , Tae Whan Kim , Seung Oun Kang , Dong Chul Choo , Jae Hwan Shim
发明人： Eun Kyu Kim , Young Ju Park , Tae Whan Kim , Seung Oun Kang , Dong Chul Choo , Jae Hwan Shim
IPC分类号： H01L21425
CPC分类号： C23C14/5833 , B82Y10/00 , B82Y30/00 , C23C14/5873 , C30B13/24 , C30B29/605 , H01L21/265 , Y10S977/949
摘要： Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature. Further, the invention contributes largely to a development of next generation ultra high density memory device with a memory capacitance of tera byte level or more.
摘要翻译：公开了一种形成纳米晶体的方法。在上述方法中，制备了在其上形成有金属膜或半导体膜的基板。聚焦离子束照射在金属膜或半导体膜的表面上的多个位置上，由此在聚焦离子束的焦点部分除去金属膜或半导体膜，但是在金属膜或半导体膜由于聚焦离子束的辐射效应而在聚焦离子束的重叠区域断裂，形成纳米晶体。该方法允许使用聚焦离子束容易且简单地形成几nm或更小尺寸的纳米晶体。结果，形成的纳米晶体具有能够在室温下抑制热波动现象的结合能，从而可以制造能够在室温下操作的隧道晶体管。此外，本发明在很大程度上有助于开发具有tera字节级或更高级别的存储电容的下一代超高密度存储器件。

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