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1. 发明授权

US07696682B2 Organic light emitting device using Mg—Ag thin film and manufacturing method thereof 有权
标题翻译：使用Mg-Ag薄膜的有机发光元件及其制造方法
公开(公告)号：US07696682B2
公开(公告)日：2010-04-13
申请号：US11475791
申请日：2006-06-27
申请人： Tae-Whan Kim , Dong-Chul Choo , Hee-Cheol Im
发明人： Tae-Whan Kim , Dong-Chul Choo , Hee-Cheol Im
IPC分类号： H01J1/62
CPC分类号： H05B33/26 , H01L51/0081 , H01L51/5221 , H01L2251/5346
摘要： An organic light emitting device according to embodiment of the present invention comprises: a substrate; a first electrode formed on the substrate; a light-emitting member formed on the first electrode, and comprising multi-layer structure; and a second electrode formed on the light-emitting member, wherein the second electrode comprises Mg—Ag alloy which contains Mg of 1-10 wt % and a concentration gradient of the Mg—Ag alloy is formed from the top of the emitting-light member.
摘要翻译：根据本发明实施例的有机发光器件包括：衬底; 形成在所述基板上的第一电极; 形成在所述第一电极上并且包括多层结构的发光构件; 以及形成在所述发光部件上的第二电极，其中所述第二电极包含含有1-10重量％的Mg的Mg-Ag合金，并且所述Mg-Ag合金的浓度梯度由所述发光的顶部形成会员。

2. 发明授权

US07897270B2 Organic light emitting diode display and manufacturing method thereof 有权
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US07897270B2
公开(公告)日：2011-03-01
申请号：US11647880
申请日：2006-12-29
申请人： Tae-Whan Kim , Dong-Chul Choo , Chang-Uk Kim
发明人： Tae-Whan Kim , Dong-Chul Choo , Chang-Uk Kim
IPC分类号： H01L51/52 , H01L51/54
CPC分类号： H01L51/5012 , Y10T428/24942
摘要： According to an embodiment of the present invention, an OLED display includes a substrate, a first electrode, a hole transport layer, a hole blocking layer, an emitting layer, and a second electrode. The first electrode is formed on the substrate. The hole transport layer is formed on the first electrode and includes a first material having a first highest occupied molecular orbital (HOMO) level and a first lowest unoccupied molecular orbital (LUMO) level. The hole blocking layer is formed on the hole transport layer and includes a second material having a second HOMO level and a second LUMO level. The emitting layer is formed on the hole blocking layer and includes a third material having a third HOMO level and a third LUMO level. The second electrode is formed on the emitting layer. Herein, the second HOMO level is higher than the first HOMO level and the third HOMO level.
摘要翻译：根据本发明的实施例，OLED显示器包括基板，第一电极，空穴传输层，空穴阻挡层，发光层和第二电极。第一电极形成在基板上。空穴传输层形成在第一电极上并且包括具有第一高占据分子轨道（HOMO）水平和第一最低未占分子轨道（LUMO）水平的第一材料。空穴阻挡层形成在空穴传输层上，并且包括具有第二HOMO能级和第二LUMO能级的第二材料。发光层形成在空穴阻挡层上，并且包括具有第三HOMO能级和第三LUMO能级的第三材料。第二电极形成在发光层上。这里，第二HOMO级别高于第一HOMO级别和第三HOMO级别。

3. 发明申请

US20060290270A1 Organic light emitting device and manufacturing method thereof 有权
标题翻译：有机发光器件及其制造方法
公开(公告)号：US20060290270A1
公开(公告)日：2006-12-28
申请号：US11475791
申请日：2006-06-27
申请人： Tae-Whan Kim , Dong-Chul Chod , Hee-Cheol Im
发明人： Tae-Whan Kim , Dong-Chul Chod , Hee-Cheol Im
IPC分类号： H05B33/00 , H01J1/62
CPC分类号： H05B33/26 , H01L51/0081 , H01L51/5221 , H01L2251/5346
摘要： An organic light emitting device according to embodiment of the present invention comprises: a substrate; a first electrode formed on the substrate; a light-emitting member formed on the first electrode, and comprising multi-layer structure; and a second electrode formed on the light-emitting member, wherein the second electrode comprises Mg—Ag alloy which contains Mg of 1-10 wt % and a concentration gradient of the Mg—Ag alloy is formed from the top of the emitting-light member.
摘要翻译：根据本发明实施例的有机发光器件包括：衬底; 形成在所述基板上的第一电极; 形成在所述第一电极上并且包括多层结构的发光构件; 以及形成在所述发光部件上的第二电极，其中所述第二电极包含含有1-10重量％的Mg的Mg-Ag合金，并且所述Mg-Ag合金的浓度梯度由所述发光的顶部形成会员。

4. 发明申请

US20070241326A1 ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US20070241326A1
公开(公告)日：2007-10-18
申请号：US11736982
申请日：2007-04-18
申请人： Tae-Whan Kim , Kyoung-Phil Kim , Dong-Chul Choo , Sang-Min Han , Dae-Uk Lee
发明人： Tae-Whan Kim , Kyoung-Phil Kim , Dong-Chul Choo , Sang-Min Han , Dae-Uk Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/5275
摘要： An organic light emitting device and manufacturing method thereof includes a substrate; a first electrode formed on the substrate; a second electrode formed on the first electrode; an light emitting member interposed between the first electrode and the second electrode; and a photonic crystal member disposed in proximity to the substrate.
摘要翻译：一种有机发光器件及其制造方法，包括：基板; 形成在所述基板上的第一电极; 形成在第一电极上的第二电极; 插入在所述第一电极和所述第二电极之间的发光部件; 以及设置在所述基板附近的光子晶体部件。

5. 发明申请

US20080007170A1 Organic light emitting diode display and manufacturing method thereof 有权
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US20080007170A1
公开(公告)日：2008-01-10
申请号：US11647880
申请日：2006-12-29
申请人： Tae-Whan Kim , Dong-Chul Choo , Chang-Uk Kim
发明人： Tae-Whan Kim , Dong-Chul Choo , Chang-Uk Kim
IPC分类号： H01L51/52 , H01L51/54
CPC分类号： H01L51/5012 , Y10T428/24942
摘要： According to an embodiment of the present invention, an OLED display includes a substrate, a first electrode, a hole transport layer, a hole blocking layer, an emitting layer, and a second electrode. The first electrode is formed on the substrate. The hole transport layer is formed on the first electrode and includes a first material having a first highest occupied molecular orbital (HOMO) level and a first lowest unoccupied molecular orbital (LUMO) level. The hole blocking layer is formed on the hole transport layer and includes a second material having a second HOMO level and a second LUMO level. The emitting layer is formed on the hole blocking layer and includes a third material having a third HOMO level and a third LUMO level. The second electrode is formed on the emitting layer. Herein, the second HOMO level is higher than the first HOMO level and the third HOMO level.
摘要翻译：根据本发明的实施例，OLED显示器包括基板，第一电极，空穴传输层，空穴阻挡层，发光层和第二电极。第一电极形成在基板上。空穴传输层形成在第一电极上并且包括具有第一高占据分子轨道（HOMO）水平和第一最低未占分子轨道（LUMO）水平的第一材料。空穴阻挡层形成在空穴传输层上，并且包括具有第二HOMO能级和第二LUMO能级的第二材料。发光层形成在空穴阻挡层上，并且包括具有第三HOMO能级和第三LUMO能级的第三材料。第二电极形成在发光层上。这里，第二HOMO级别高于第一HOMO级别和第三HOMO级别。

6. 发明申请

US20070075637A1 Method of manufacturing an organic light emitting diode 有权
标题翻译：制造有机发光二极管的方法
公开(公告)号：US20070075637A1
公开(公告)日：2007-04-05
申请号：US11540389
申请日：2006-09-29
申请人： Tae-Whan Kim , Dong-Chul Choo
发明人： Tae-Whan Kim , Dong-Chul Choo
IPC分类号： H05B33/00
CPC分类号： H01L51/5088
摘要： A manufacturing method of an organic light emitting diode (“OLED”) includes forming an anode on a substrate, forming an inorganic buffer layer on the anode, forming a hole transport layer on the buffer layer, forming a light emission layer on the hole transport layer, forming an electron transport layer on the light emission layer, and forming a cathode on the electron transport layer. The forming an inorganic buffer layer includes thermal evaporation and oxidation.
摘要翻译：有机发光二极管（“OLED”）的制造方法包括在基板上形成阳极，在阳极上形成无机缓冲层，在缓冲层上形成空穴传输层，在空穴传输上形成发光层在发光层上形成电子传输层，在电子传输层上形成阴极。形成无机缓冲层包括热蒸发和氧化。

7. 发明授权

US07622864B2 Method of manufacturing an organic light emitting diode 有权
标题翻译：制造有机发光二极管的方法
公开(公告)号：US07622864B2
公开(公告)日：2009-11-24
申请号：US11540389
申请日：2006-09-29
申请人： Tae-Whan Kim , Dong-Chul Choo
发明人： Tae-Whan Kim , Dong-Chul Choo
IPC分类号： H01J9/00 , H01J1/62
CPC分类号： H01L51/5088
摘要： A manufacturing method of an organic light emitting diode (“OLED”) includes forming an anode on a substrate, forming an inorganic buffer layer on the anode, forming a hole transport layer on the buffer layer, forming a light emission layer on the hole transport layer, forming an electron transport layer on the light emission layer, and forming a cathode on the electron transport layer. The forming an inorganic buffer layer includes thermal evaporation and oxidation.
摘要翻译：有机发光二极管（“OLED”）的制造方法包括在基板上形成阳极，在阳极上形成无机缓冲层，在缓冲层上形成空穴传输层，在空穴传输上形成发光层在发光层上形成电子传输层，在电子传输层上形成阴极。形成无机缓冲层包括热蒸发和氧化。

8. 发明授权

US08735895B2 Electronic device including graphene thin film and methods of fabricating the same 有权
标题翻译：包括石墨烯薄膜的电子器件及其制造方法
公开(公告)号：US08735895B2
公开(公告)日：2014-05-27
申请号：US12902783
申请日：2010-10-12
申请人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Jae-Ho Shim , Jung-Min Lee , Jae-Hun Jung
发明人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Jae-Ho Shim , Jung-Min Lee , Jae-Hun Jung
IPC分类号： H01L29/10
CPC分类号： H01L29/78684 , H01L51/0045 , H01L51/0529 , H01L51/0591
摘要： Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure.
摘要翻译：提供一种电子器件及其制造方法，电子器件包括器件衬底，堆叠结构和电极。层叠结构包括在第一绝缘体和第二绝缘体之间的石墨烯薄膜。电极设置在层叠结构之上。

9. 发明申请

US20120097232A1 SOLAR CELL USING P-I-N NANOWIRE 有权
标题翻译：太阳能电池使用P-I-N NANOWIRE
公开(公告)号：US20120097232A1
公开(公告)日：2012-04-26
申请号：US13382134
申请日：2010-07-06
申请人： Tae-Whan Kim , Joo-Hyung You , Jae-Hun Jung , Jae-Seok Yi , Won-Il Park
发明人： Tae-Whan Kim , Joo-Hyung You , Jae-Hun Jung , Jae-Seok Yi , Won-Il Park
IPC分类号： H01L31/075 , B82Y99/00
CPC分类号： H01L31/03529 , H01L31/035281 , Y02E10/50
摘要： A solar cell using a p-i-n nanowire that may generate light by absorbing solar light in a wide wavelength region efficiently without generating light loss and may be manufactured with a simplified process and low cost. The solar cell includes: a semiconductor layer formed of a semiconductor material; and a photoelectromotive layer including a semiconductor structure including a core-nanowire that extends long in an upward direction of the semiconductor layer and is formed of an intrinsic semiconductor material, and a shell-nanowire that is formed to surround a periphery of the core-nanowire and is formed of a semiconductor material, wherein the semiconductor material that is used for forming the semiconductor layer includes an n-type semiconductor material, or the semiconductor material that is used for forming the shell-nanowire includes a p-type semiconductor material, and the semiconductor material that is used for forming the semiconductor layer includes a p-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire includes an n-type semiconductor material.
摘要翻译：使用p-i-n纳米线的太阳能电池，其可以通过在宽波长区域中有效吸收太阳光而不产生光损耗而产生光，并且可以以简化的工艺和低成本制造。太阳能电池包括：由半导体材料形成的半导体层; 以及包含半导体结构的光电动势层，所述半导体结构包括在所述半导体层的向上方向上延伸并且由本征半导体材料形成的核 - 纳米线，并且形成为包围所述核 - 纳米线的周围的壳 - 纳米线并且由半导体材料形成，其中用于形成半导体层的半导体材料包括n型半导体材料或用于形成壳 - 纳米线的半导体材料包括p型半导体材料，以及用于形成半导体层的半导体材料包括p型半导体材料，用于形成壳 - 纳米线的半导体材料包括n型半导体材料。

10. 发明申请

US20110101365A1 ELECTRONIC DEVICE INCLUDING GRAPHENE THIN FILM AND METHODS OF FABRICATING THE SAME 有权
标题翻译：包括石墨薄膜的电子器件及其制造方法
公开(公告)号：US20110101365A1
公开(公告)日：2011-05-05
申请号：US12902783
申请日：2010-10-12
申请人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Jae-Ho Shim , Jung-Min Lee , Jae-Hun Jung
发明人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Jae-Ho Shim , Jung-Min Lee , Jae-Hun Jung
IPC分类号： H01L29/786
CPC分类号： H01L29/78684 , H01L51/0045 , H01L51/0529 , H01L51/0591
摘要： Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure.
摘要翻译：提供一种电子器件及其制造方法，电子器件包括器件衬底，堆叠结构和电极。层叠结构包括在第一绝缘体和第二绝缘体之间的石墨烯薄膜。电极设置在层叠结构之上。

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