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1. 发明授权

US08159783B2 Substrate with intermediate layer for thin-film magnetic head and method of manufacturing the substrate with intermediate layer 有权
标题翻译：具有薄膜磁头中间层的基板和具有中间层的基板的制造方法
公开(公告)号：US08159783B2
公开(公告)日：2012-04-17
申请号：US10559704
申请日：2005-05-13
申请人： Taisuke Hirooka , Hironobu Tsubota
发明人： Taisuke Hirooka , Hironobu Tsubota
IPC分类号： G11B5/127
CPC分类号： G11B5/3912
摘要： A thin-film magnetic head substrate according to the present invention includes: a ceramic base with a principal surface; and an undercoat film, which covers the principal surface of the ceramic base. An electrical/magnetic transducer is provided on the undercoat film. The substrate further includes an intermediate layer between the principal surface of the ceramic base and the undercoat film. The intermediate layer is made of a material other than an aluminum oxide and has been patterned so as to make a portion of the principal surface of the ceramic base contact with the undercoat film.
摘要翻译：根据本发明的薄膜磁头基板包括：具有主表面的陶瓷基体; 以及覆盖陶瓷基材的主表面的底涂膜。在底涂层上设置电磁换能器。基板还包括在陶瓷基体的主表面和底涂层之间的中间层。中间层由氧化铝以外的材料制成，并且已经被图案化，以使陶瓷基体的主表面的一部分与底涂层接触。

2. 发明授权

US07203031B2 Substrate for thin-film magnetic head and method of manufacturing the substrate 有权
标题翻译：薄膜磁头用基板及其制造方法
公开(公告)号：US07203031B2
公开(公告)日：2007-04-10
申请号：US10433376
申请日：2002-12-16
申请人： Hironobu Tsubota , Shinji Tsujimoto , Taisuke Hirooka
发明人： Hironobu Tsubota , Shinji Tsujimoto , Taisuke Hirooka
IPC分类号： G11B5/127
CPC分类号： G11B5/6005 , G11B21/21
摘要： A substrate for a thin-film magnetic head includes a ceramic base and an undercoat film of amorphous SiC, which is supported on the ceramic base.
摘要翻译：用于薄膜磁头的基板包括陶瓷基体和负载在陶瓷基底上的无定形SiC的底涂膜。

3. 发明授权

US07641736B2 Method of manufacturing SiC single crystal wafer 有权
标题翻译：制造SiC单晶晶片的方法
公开(公告)号：US07641736B2
公开(公告)日：2010-01-05
申请号：US10545306
申请日：2005-02-22
申请人： Taisuke Hirooka
发明人： Taisuke Hirooka
IPC分类号： C30B29/16
CPC分类号： H01L21/0475 , C30B29/36 , C30B33/12 , Y10S438/931
摘要： A method of manufacturing an SiC single crystal wafer according to the present invention includes the steps of: (a) preparing an SiC single crystal wafer 10 with a mirror-polished surface; (b) oxidizing the surface of the SiC single crystal wafer 10 with plasma, thereby forming an oxide layer 12 on the surface of the SiC single crystal wafer; and (c) removing at least a portion of the oxide layer 12 by a reactive ion etching process. Preferably, the surface of the wafer is planarized by repeatedly performing the steps (b) and (c) a number of times.
摘要翻译：根据本发明的SiC单晶晶片的制造方法包括以下步骤：（a）制备具有镜面抛光表面的SiC单晶晶片10; （b）用等离子体氧化SiC单晶晶片10的表面，从而在SiC单晶晶片的表面上形成氧化物层12; 和（c）通过反应离子蚀刻工艺除去氧化物层12的至少一部分。优选地，通过重复执行步骤（b）和（c）多次来平坦化晶片的表面。

4. 发明授权

US07114239B2 Method for manufacturing a thin-film magnetic head wafer 有权
标题翻译：薄膜磁头晶片的制造方法
公开(公告)号：US07114239B2
公开(公告)日：2006-10-03
申请号：US10460371
申请日：2003-06-13
申请人： Taisuke Hirooka
发明人： Taisuke Hirooka
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3173 , G11B5/3103 , G11B5/314 , G11B5/3163 , G11B5/3166 , G11B5/3189 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/11
摘要： A thin-film magnetic head wafer includes a first principal surface and a second principal surface which are substantially parallel to each other. An electrical/magnetic transducer is provided on the first principal surface. Identification information is recorded on the first principal surface of the wafer.
摘要翻译：薄膜磁头晶片包括彼此基本平行的第一主表面和第二主表面。电/磁换能器设置在第一主表面上。识别信息被记录在晶片的第一主表面上。

5. 发明授权

US08530353B2 SiC substrate and method of manufacturing the same 有权
标题翻译： SiC基板及其制造方法
公开(公告)号：US08530353B2
公开(公告)日：2013-09-10
申请号：US13152524
申请日：2011-06-03
申请人： Taisuke Hirooka
发明人： Taisuke Hirooka
IPC分类号： H01L21/302 , H01L21/461 , C03C25/68 , C03C15/00
CPC分类号： H01L21/302 , C30B29/36 , C30B33/12 , H01L21/0445
摘要： A method of manufacturing a SiC substrate which has a first principal surface and a second principal surface, includes the step of removing, by a vapor phase etching process, at least a portion of a work-affected layer which is formed by mechanical flattening or cutting on the first principal surface of the SiC substrate.
摘要翻译：一种制造具有第一主表面和第二主表面的SiC衬底的方法包括通过气相蚀刻工艺去除由机械平整或切割形成的工作影响层的至少一部分的步骤在SiC衬底的第一主表面上。

6. 发明授权

US07474503B2 Thin film magnetic head wafer with identification information 有权
标题翻译：具有识别信息的薄膜磁头晶圆
公开(公告)号：US07474503B2
公开(公告)日：2009-01-06
申请号：US11466475
申请日：2006-08-23
申请人： Taisuke Hirooka
发明人： Taisuke Hirooka
IPC分类号： G11B5/147 , G11B5/127 , H04R31/00
CPC分类号： G11B5/3173 , G11B5/3103 , G11B5/314 , G11B5/3163 , G11B5/3166 , G11B5/3189 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/11
摘要： A thin-film magnetic head wafer includes a first principal surface and a second principal surface which are substantially parallel to each other. An electrical/magnetic transducer is provided on the first principal surface. Identification information is recorded on the first principal surface of the wafer.
摘要翻译：薄膜磁头晶片包括彼此基本平行的第一主表面和第二主表面。电/磁换能器设置在第一主表面上。识别信息被记录在晶片的第一主表面上。

7. 发明授权

US06924090B2 Method of recording identifier and set of photomasks 有权
标题翻译：记录标识符和光掩码的方法
公开(公告)号：US06924090B2
公开(公告)日：2005-08-02
申请号：US10211568
申请日：2002-08-05
申请人： Taisuke Hirooka
发明人： Taisuke Hirooka
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F7/2022 , G03F1/00
摘要： A method of recording different identifiers, each including at least one character, on multiple plate-type members, involves the use of a photomask of a first type and at least two photomasks of a second type. The photomask of the first type has an opaque pattern that defines a blank region to write the identifier thereon. Each of the photomasks of the second type has an opaque pattern defining the at least one character. The method further includes the steps of forming a photoresist layer on the surface of one of the plate-type members, exposing the photoresist layer, except the blank region, to a radiation through the photomask of the first type, and forming a latent image of the at least one character in the blank region through at least one of the photomasks of the second type.
摘要翻译：在多个板型构件上记录每个包括至少一个字符的不同标识符的方法涉及使用第一类型的光掩模和至少两个第二类型的光掩模。第一类型的光掩模具有不透明图案，其定义了在其上写入标识符的空白区域。第二类型的每个光掩模具有限定至少一个字符的不透明图案。该方法还包括以下步骤：在一个板型构件的表面上形成光致抗蚀剂层，将除空白区域之外的光致抗蚀剂层暴露于通过第一类型的光掩模的辐射，并形成第通过第二类型的光掩模中的至少一个，在空白区域中的至少一个字符。

8. 发明申请

US20110156058A1 SILICON CARBIDE MONOCRYSTAL SUBSTRATE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：硅碳单晶基板及其制造方法
公开(公告)号：US20110156058A1
公开(公告)日：2011-06-30
申请号：US13061955
申请日：2010-02-04
申请人： Tsutomu Hori , Taisuke Hirooka
发明人： Tsutomu Hori , Taisuke Hirooka
IPC分类号： H01L29/24 , H01L21/306
CPC分类号： B24B37/042 , C30B25/186 , C30B29/36 , C30B33/00 , H01L21/02024 , H01L29/1608
摘要： A method for producing a silicon carbide single crystal substrate according to the present invention includes steps of: (A) preparing a silicon carbide single crystal substrate having a mechanically polished main face; (B) performing chemical mechanical polishing on the main face of the silicon carbide single crystal substrate using a polishing slurry containing abrasive grains dispersed therein to finish the main face as a mirror surface; (C′1) oxidizing at least a part of the main face finished as a mirror surface by a gas phase to form an oxide; and (C′2) removing the oxide.
摘要翻译：本发明的碳化硅单晶基板的制造方法包括以下步骤：（A）制备具有机械抛光主面的碳化硅单晶基板; （B）使用包含分散在其中的磨粒的研磨浆料在碳化硅单晶基板的主面上进行化学机械研磨，使主面完成镜面; （C'1）通过气相氧化作为镜面完成的主面的至少一部分以形成氧化物; 和（C'2）去除氧化物。

9. 发明申请

US20070051301A1 Method of manufacturing sic single crystal wafer 有权
标题翻译：制造单晶晶片的方法
公开(公告)号：US20070051301A1
公开(公告)日：2007-03-08
申请号：US10545306
申请日：2005-02-22
申请人： Taisuke Hirooka
发明人： Taisuke Hirooka
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/0475 , C30B29/36 , C30B33/12 , Y10S438/931
摘要： A method of manufacturing an SiC single crystal wafer according to the present invention includes the steps of: (a) preparing an SiC single crystal wafer 10 with a mirror-polished surface; (b) oxidizing the surface of the SiC single crystal wafer 10 with plasma, thereby forming an oxide layer 12 on the surface of the SiC single crystal wafer; and (c) removing at least a portion of the oxide layer 12 by a reactive ion etching process. Preferably, the surface of the wafer is planarized by repeatedly performing the steps (b) and (c) a number of times.
摘要翻译：根据本发明的SiC单晶晶片的制造方法包括以下步骤：（a）制备具有镜面抛光表面的SiC单晶晶片10; （b）用等离子体氧化SiC单晶晶片10的表面，从而在SiC单晶晶片的表面上形成氧化物层12; 和（c）通过反应离子蚀刻工艺除去氧化物层12的至少一部分。优选地，通过重复执行步骤（b）和（c）多次来平坦化晶片的表面。

10. 发明授权

US06906895B2 Method of marking sintered body and method for manufacturing magnetic head wafer 有权
标题翻译：标记烧结体的方法及制造磁头晶片的方法
公开(公告)号：US06906895B2
公开(公告)日：2005-06-14
申请号：US10444133
申请日：2003-05-23
申请人： Taisuke Hirooka
发明人： Taisuke Hirooka
IPC分类号： C04B41/91 , G11B5/10 , G11B5/31 , G11B5/60 , G11B5/147 , G01L21/30
CPC分类号： G11B5/3173 , C04B35/117 , C04B41/009 , C04B41/5346 , C04B41/91 , C04B2235/3843 , C04B2235/5436 , C04B2235/5445 , C04B2235/945 , C04B2235/963 , G11B5/102 , G11B5/3106 , G11B5/3166 , C04B35/10 , C04B35/5611 , C04B41/0054
摘要： A method of marking a sintered body includes the step of preparing the sintered body by sintering a mixture of first and second types of powder particles. The first type of powder particles is made of a first material and the second type of powder particles is made of a second material that has a different etch susceptibility from the first material. The method further includes the step of writing ID information on the surface of the sintered body by forming a first concave region to a depth of at least about 10 nm under the surface of the sintered body and a second concave region under the first concave region, respectively. The first concave region is formed by etching away both the first and second types of powder particles, while the second concave region is formed by etching away only the first type of powder particles.
摘要翻译：标记烧结体的方法包括通过烧结第一种和第二种粉末颗粒的混合物来制备烧结体的步骤。第一种类型的粉末颗粒由第一种材料制成，第二类型的粉末颗粒由与第一种材料具有不同蚀刻敏感性的第二种材料制成。该方法还包括通过在烧结体的表面上形成至少约10nm的深度的第一凹部区域和在第一凹部区域下方的第二凹部区域，在烧结体的表面上书写ID信息的步骤，分别。通过蚀刻掉第一和第二类型的粉末颗粒而形成第一凹入区域，而通过仅蚀刻掉第一类型的粉末颗粒来形成第二凹入区域。

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